DATE SHEET OF GRADE 5 AND 8 IN PEC Search Results

nec 2562

Abstract: 1000w audio amp circuit diagram block diagram duplex NL2100 1000w audio power amp circuit diagram si 810 MH-4002 audio amp 1000w 1000w audio amp nec 40 nm
Contextual Info: PRELIMINARY DATA SHEET TRANSCEIVER NL2100 HIGH-SPEED POF/HPCF DATA LINK TRANSCEIVER MODULE COMPLIANT WITH ATM FORUM SPECIFICATIONS DESCRIPTION The NL2100 is a data link transceiver module for high-speed data transmission up to 156 Mb/s over 50 meters POF and 100 meters (HPCF), compliant with ATM Forum specifications. The transceiver contains a 650 nm LED

nec 358 amplifier

Abstract: NEC 426 nec 1678
Contextual Info: PRELIMINARY DATA SHEET_ N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power CW with high

Contextual Info: FLEX 10K Embedded Programmable Logic Family May 1998. ver. 3.11 FeatU res Data Sheet • ■ The industry's first embedded programmable logic device PLD family, providing system integration in a single device Embedded array for implementing megafunctions, such as

PC8130TA

Abstract: Mini 50 Pin IDE
Contextual Info: PRELIMINARY DATA SHEET_ IV IF f " / BIPOLAR ANALOG INTEGRATED CIRCUIT / /¿PC 8 1 3 0 T A , /iP C 8 1 3 1 T A -1 5 dBm INPUT, VARIABLE GAIN AMPLIFIER SILICON MMIC FOR TRANSMITTER AGC OF DIGITAL CELLULAR TELEPHONE DESCRIPTION The ¿¿PC8130TA and ¿¿PC8131TA are silicon monolithic integrated circuits designed as variable gain amplifier.

1T26 DIODE

Abstract: altera flex10k Diode SY 356
Contextual Info: FLEX 10K Embedded Programmable Logic Family May 1883. ver. 3.11 Features. ÖateSheet S8 £8 The industry's first embedded programmable logic device PLD family, providing system integration in a single device Embedded array for implementing megafunctions, such as

mec oscillator

Abstract: P11997E 1SV210 2.2 GHz local oscillator ic 6wn capacitor
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT MIXER+OSCILLATOR SILICON MMIC FOR FREQUENCY DOWNCONVERTER OF L BAND WIRELESS RECEIVER DESCRIPTION ¿¡PC2756TB is a silicon monolithic integrated circuit designed as L band frequency downconverter for receiver

7805 nec voltage regulator

Abstract: NEC JAPAN 7805 7805 nec nec 7805 nec 7805 ki 30 if
Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT _ ¿ t P C 3 2 1 1 G R AGC AMPLIFIER FOR DIGITAL CATV RETURN PASS DESCRIPTION jiPC3211GR is a silicon monolithic integrated circuit designed as AGC amplifier for digital CATV systems. This IC

NEC 2561

Abstract: nec 2561 le NEC 2561 LE 301 sem 2105 16 pin saa 1074 SAA 1061 nec 2561 4 pin cp 1099 c 945 p 331 saa 1049
Contextual Info: PRELIMINARY DATA SHEET_ NEC GaAs MES FET NE72218 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.0 dB TYP. @f = 12 GHz • Gate Length : Lg = 0.8 yum recessed gate • Gate Width : Wg = 400 ym

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT ¿¿PC3211GR AGC AMPLIFIER FOR DIGITAL CATV RETURN PASS DESCRIPTION /¿PC3211GR is a silicon monolithic integrated circuit designed as AGC amplifier for digital CATV systems. This IC

CH023

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ ¿¿PD2 3 C 3 2 0 8 2 L 32M-BIT MASK PROGRAMMABLE ROM 2M-WORD BY 16-BIT WORD MODE / 1 M-WORD BY 32-BIT (DOUBLE WORD MODE) PAGE ACCESS MODE Description The /¿PD23C32082L is a 33,554,432 bits mask-programmable ROM.The wordorganization is selectable (WORD

ba37 diode

Abstract: diode aj41 EPF10K20 EPF10K10 EPF10K10A EPF10K30 EPF10K30A EPF10K40 EPF10K50 EPF10K50V
Contextual Info: FLEX 10K Embedded Programmable Logic Family O ctober 1998. ver. 3.13 Features. Data Sheet * H B r*^te industry's first embedded programmable logic device PLD family, providing system integration in a single device Embedded array for implementing megafunctions, such as

Contextual Info: FLEX 10K Embedded Programmable Logic Family Data Sheet May 1998. ver. 3.10 Features. * r*^te industry's first embedded programmable logic device PLD H B family, providing system integration in a single device Embedded array for implementing megafunctions, such as

Contextual Info: FLEX 8000 Programmable Logic Device Family S e p te m b e r 1S9S» v e r. 9.11 Features. D ata S h e e t Low-cost, high-density, register-rich CMOS programmable logic device PLD family (see T;?bie 1) 2,500 to 16,000 usable gates 282 to 1,500 registers

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT MC-4532CC726 32M-W ORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4532CC726 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of

IC3208

Abstract: P12315EJ2V0DS00
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT ¿iPG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿tPG105B-1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has 3 stages FET amplifiers to achieve high linear gain. This amplifier is ideal for microwave communication system and the

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT _ /XPD23C64040L 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT BYTE MODE / 4M-WORD BY 16-BIT(WORD MODE) PAGE ACCESS MODE Description The /¿PD23C64040L is a 67,108,864 bits mask-programm able ROM. The word organization is selectable (BYTE

transistor NEC D 587

Abstract: NEC D 587 TRANSISTOR R44 z 607 ma 2SC3585 transistor 5951 nec 1041
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION P A C K A G E DIM ENSIO NS Units: mm The 2SC3585 is an NPN epitaxial silicon transistor designed for use in low-noise and small signal amplifiers from VHF band to UHF band.

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT //PC1652G SILICON MONOLITHIC BIPOLAR INTEGRATED CIRCUIT WIDE BAND AMPLIFIER DESCRIPTION The 652G PIN CONNECTIONS is a silicon monolithic integrated circuit especially designed as a wide band amplifier convering HF band

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ // PD23C128040L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The ^¡PD23C128040L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT ¡ lP D 2 3 C 6 4 0 0 0 A 64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT BYTE MODE / 4M-WORD BY 16-BIT(WORD MODE) Description The /XPD23C64000AL is a 67,108,864 bits mask-programmable ROM. The word organization is selectable (BYTE

Contextual Info: PRELIMINARY DATA SHEET_ MOS INTEGRATED CIRCUIT _ // PD23C128000L 128M-BIT MASK-PROGRAMMABLE ROM 16M-WORD BY 8-BIT BYTE MODE / 8M-WORD BY 16-BIT (WORD MODE) Description The ^¡PD23C128000L is a 134,217,728 bits mask-programmable ROM. The word organization is selectable (BYTE

Contextual Info: DATA SHEET SILICON POWER TRANSISTOR 2SC2586 NPN SILICON EPITAXIAL TRANSISTOR FOR UHF-BAND POWER AMPLIFIER INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC2586 is an NPN silicon epitaxial transistor designed ^ 9 .4 MAX. for UHF-band medium pow er amplifiers.

d1072

Abstract: 2SK2541 MEI-1202 MF-1134
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2541 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWINGS in millimeter The 2SK2541 is a switching device which can be driven directly by a 1.5 V power source. The M O S FET has excellent switching characteristics and is suitable

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT //PG503B 9 GHz DIVIDE-BY-4 PRESCALER DESCRIPTION The //PG503B is a GaAs divide-by-4 prescaler capable of operating up to 9 GHz. It is intend to be used in the frequency synthesizers of microwave application systems and measurement