DATASHEET DIAGRAM NOT GATE Search Results

NAU8812

Abstract: AEC-Q100 TS16949 BTL POWER AMPLIFIER ic 4558 analog mems microphone NAU-8 microphone electret ecm 4f voltage of ic 4558 audio 0X049 mems mic
Contextual Info: NAU8812 Mono Audio Codec with Speaker Driver emPowerAudio 1. GENERAL DESCRIPTION The NAU8812 is a cost effective and low power wideband MONO audio CODEC. It is designed for voice telephony related applications. Functions include Automatic Level Control ALC with noise gate, PGA, standard audio interface

WAU8812

Abstract: AEC-Q100 TS16949 DAC FILTER 0X032
Contextual Info: Mono Audio Codec with Speaker Driver emPowerAudio 1. GENERAL DESCRIPTION The WAU8812 is a cost effective and low power wideband MONO audio CODEC. It is designed for voice telephony related applications. Functions include Automatic Level Control ALC with noise gate, PGA, standard audio interface

DM4011

Abstract: "XOR Gate" IC 4011 IC of XOR GATE DATA SHEET IC 4011 DELL power supply diagram Applications of "XOR Gate" 4011 IC data sheet differential manchester encoder XOR GATE uses
Contextual Info: DM4011 12.5 Gb/sec XOR gate Preliminary Information Description The DM4011 is a high-speed logic exclusive OR (XOR) device fabricated using 1-µm GaAs HBT technology. It features high output voltage, fast rise and fall times, and excellent eye diagram at

5000watt

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. D Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=25 C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

2000WATT POWER AMPLIFIER CIRCUIT DIAGRAM

Abstract: DS34C87 LIN opto isolator SFH6186-4 SPM6G070-060D
Contextual Info: SENSITRON SEMICONDUCTOR SPM6G070-060D TECHNICAL DATA DATASHEET 4328, Rev. A Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 600 VOLT, 70 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

74VHC4040 application note

Abstract: VHC4040 74VHC4040 74HC4040 74VHC4040M 74VHC4040MTC M16A MTC16
Contextual Info: 74VHC4040 12-Stage Binary Counter tm Features General Description • High speed; fMAX = 210MHz at VCC = 5V ■ Low power dissipation: ICC = 4µA Max. at TA = 25°C The VHC4040 is an advanced high-speed CMOS device fabricated with silicon gate CMOS technology. It

Contextual Info: ARM-based Embedded MPU SAM9X25 DATASHEET Description The SAM9X25 is a high-performance ARM926EJ-S -based embedded microprocessor unit, running at 400 MHz and featuring multiple networking/connectivity peripherals, optimized for industrial applications such as building automation, gateways

SCOP 200-002

Abstract: AUIRS2181
Contextual Info: AUIRS2181 4 Features • • • • • • • • • • • • Product Summary Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage, dV/dt immune Gate drive supply range from 10 V to 20 V

pdp scan driver

Abstract: fan7361* application
Contextual Info: FAN7361,FAN7362 High-Side Gate Driver Features Description • Floating Channel Designed for Bootstrap Operation to +600V The FAN7361/FAN7362, a monolithic high-side gate driver IC, can drive MOSFETs and IGBTs which operate up to +600V. Fairchild’s high voltage process and common-mode noise canceling techniques

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM60013FV-C ●General Description The BM60013FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input

IC53A

Contextual Info: SENSITRON SEMICONDUCTOR SPM6G060-120D TECHNICAL DATA DATASHEET 4165, Rev. C.2 Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 1200 VOLT, 60 AMP, THREE PHASE IGBT BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER IGBT DEVICE

2EDL05N06PF

Abstract: 2EDL23N06 2EDL23I06PJ 2EDL23N06PJ 2EDL05I06BF 2EDL05I06PF igbt types 2edl05i06p 2EDL05I06PJ 2edl23i06
Contextual Info: Eice DR IV ER t m High voltage gate driver IC 2E DL fa mi ly 600 V half bridge gate drive IC 2EDL05I06PF 2EDL05I06PJ 2EDL05I06BF 2EDL05N06PF 2EDL05N06PJ 2EDL23I06PJ 2EDL23N06PJ EiceDRIVER(TM) Targ et d at asheet <Revision 0.85>, 16.04.2013 Target Indust rial Po wer & Con trol

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6103FV-C ●Key Specifications  Isolation voltage:  Maximum gate drive voltage:  I/O delay time:  Minimum input pulse width:

FAN7361

Abstract: FAN7361M FAN7361MX FAN7362 FAN7362M FAN7362MX JESD51-2 fan7361* application
Contextual Info: FAN7361, FAN7362 High-Side Gate Driver Features Description „ Floating Channel Designed for Bootstrap Operation to The FAN7361/FAN7362, a monolithic high-side gate drive IC, can drive MOSFETs and IGBTs that operate up to +600V. Fairchild’s high-voltage process and commonmode noise canceling techniques provide stable operation of the high-side driver under high dv/dt noise circumstances. An advanced level shift circuit offers high-side

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6101FV-C ●Key Specifications  Isolation voltage:  Maximum gate drive voltage:  I/O delay time:  Minimum input pulse width:

Contextual Info: MM74HC4040 12-Stage Binary Counter tm Features General Description • Typical propagation delay: 16ns The MM74HC4040 is a high speed binary ripple carry counter. This counter is implemented utilizing advanced silicon-gate CMOS technology to achieve speed performance similar to LS-TTL logic while retaining the low

Contextual Info: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Two-Channel/Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6562FV-LB, BD6563FV-LB ●General Description These products guarantee long term operation and supply for industrial instrument market.

74HCT374

Abstract: 74VHCT374A 74VHCT374AM 74VHCT374AMTC 74VHCT374ASJ M20D MS-013 MTC20
Contextual Info: 74VHCT374A Octal D-Type Flip-Flop with 3-STATE Outputs tm Features General Description • High speed: fMAX = 140MHz Typ. at TA = 25°C ■ High noise immunity: VIH = 2.0V, VIL = 0.8V The VHCT374A is an advanced high speed CMOS octal flip-flop with 3-STATE output fabricated with silicon gate

Contextual Info: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Two-Channel/Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6562FV-LB, BD6563FV-LB ●General Description These products guarantee long time support in Industrial market. These products are the most suitable to use as these

D6563

Contextual Info: Datasheet Small Signal IGBT/MOSFET Gate Driver Series Two-Channel/Three-Channel Small Signal IGBT/MOSFET Gate Drivers BD6562FV-LB, BD6563FV-LB ●General Description These products guarantee long term operation and supply for industrial instrument market.

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6104FV-C General Description Key Specifications     The BM6104FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 150ns, and minimum input

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6102FV-C General Description Key Specifications The BM6102FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 200ns, and minimum input

Contextual Info: Datasheet Gate Driver Providing Galvanic isolation Series Isolation voltage 2500Vrms 1ch Gate Driver Providing Galvanic Isolation BM6104FV-C General Description Key Specifications     The BM6104FV-C is a gate driver with isolation voltage 2500Vrms, I/O delay time of 150ns, and minimum input

Contextual Info: SENSITRON SEMICONDUCTOR SPM6M080-010D TECHNICAL DATA Datasheet 4118, Rev. D Three-Phase MOSFET BRIDGE, With Gate Driver and Optical Isolation DESCRIPTION: A 100 VOLT, 80 AMP, THREE PHASE MOSFET BRIDGE Tj=250C UNLESS OTHERWISE SPECIFIED ELECTRICAL CHARACTERISTICS PER MOSFET DEVICE