DATA SHEET FOR 74HC04 Search Results

FIR 3D 41

Abstract: burst qpsk 1.28 mbps RSSI stel-9244 Transistor FIR 3D 41 STEL-1108 STEL 320 tas 5612 STEL-9244A Stanford Telecom
Contextual Info: STEL-9244 Data Sheet STEL-9244 5 - 40 MHz QPSK Burst Receiver R Key Features • Burst QPSK demodulation ■ Data rate is 2.56 Mbps ■ Tunable 5 - 40 MHz RF input frequency for system flexibility ■ Fast acquisition time to minimize channel overhead; short

BT 816 transistor

Abstract: IPMI BMC intel 8742 GPB01 csc 9102 diode R12 GPA05 2N3904 A24 GPB06 GPA07
Contextual Info: W83910F Winbond IPMI BMC W83910F Data Sheet Revision History Pages Dates Version Version Main Contents on Web n.a. All the version before 0.45 are for internal use. 0.45 n.a. First publication. 0.46 n.a. Modify D7, DA registers. register bit7. 1 2 3 24,26,

Contextual Info: 74HC04; 74HCT04 Hex inverter Rev. 4 — 3 August 2012 Product data sheet 1. General description The 74HC04; 74HCT04 is a hex inverter. The inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC.

74HC-HCT04

Abstract: 74HC04DB 74HC04PW 74HC04 for 74hc04 74HC04 equipment hct04 Z148 nxp 74hc04n 74HC04BQ
Contextual Info: 74HC04; 74HCT04 Hex inverter Rev. 4 — 3 August 2012 Product data sheet 1. General description The 74HC04; 74HCT04 is a hex inverter. The inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC.

74HC04DB

Abstract: 74HC04PW 74HC04 for 74hc04 74HC04BQ 74HCT04
Contextual Info: 74HC04-Q100; 74HCT04-Q100 Hex inverter Rev. 2 — 10 April 2013 Product data sheet 1. General description The 74HC04-Q100; 74HCT04-Q100 is a hex inverter. Inputs also include clamp diodes, this enables the use of current limiting resistors to interface inputs to voltages in excess of

Contextual Info: 74HC04-Q100; 74HCT04-Q100 Hex inverter Rev. 1 — 12 July 2012 Product data sheet 1. General description The 74HC04-Q100; 74HCT04-Q100 is a hex inverter. Inputs also include clamp diodes, this enables the use of current limiting resistors to interface inputs to voltages in excess of

74HC04

Abstract: 74HC04PW for 74hc04 74HC-HCT04 74HC04BQ
Contextual Info: 74HC04-Q100; 74HCT04-Q100 Hex inverter Rev. 1 — 12 July 2012 Product data sheet 1. General description The 74HC04-Q100; 74HCT04-Q100 is a hex inverter. Inputs also include clamp diodes, this enables the use of current limiting resistors to interface inputs to voltages in excess of

74HC04 nxp

Abstract: dhvqfn14 74HC04 74HCT04 74LV04 74LV04BQ 74LV04D 74LV04DB 74LV04N 74LV04PW
Contextual Info: 74LV04 Hex inverter Rev. 03 — 4 December 2007 Product data sheet 1. General description The 74LV04 is a low-voltage Si-gate CMOS device that is pin and function compatible with 74HC04 and 74HCT04. The 74LV04 provides six inverting buffers. 2. Features •

74HCT04

Abstract: for 74hc04 74HC04 74HC04DB 74HC04N APPLICATION 74HCT04 datasheet DIP14, inverter, high voltage 74HC04PW 74HC04 data sheet 74HCT04 Pin Diagram
Contextual Info: INTEGRATED CIRCUITS DATA SHEET 74HC04; 74HCT04 Hex inverter Product specification Supersedes data of 1993 Sep 01 2003 Jul 23 Philips Semiconductors Product specification Hex inverter 74HC04; 74HCT04 FEATURES DESCRIPTION • Complies with JEDEC standard no. 8-1A

HC04G

Abstract: 74HC04 NOT GATE 74HC04D 74HC04 74HC04DR2G 74HC04 application note DC 74HC04 74HC04 equivalent cmos 74HC04 HC04
Contextual Info: 74HC04 Hex Inverter High−Performance Silicon−Gate CMOS The 74HC04 is identical in pinout to the LS04 and the MC14069. The device inputs are compatible with Standard CMOS outputs; with pullup resistors, they are compatible with LSTTL outputs. The device consists of six three−stage inverters.

74HC1G04

Abstract: 74HCT1G04 74HC1G04GW 74HC 74HC04 74HC1G04GV 74HCT04 74HCT1G04GV 74HCT1G04GW
Contextual Info: 74HC1G04; 74HCT1G04 Inverter Rev. 04 — 16 July 2007 Product data sheet 1. General description 74HC1G04 and 74HCT1G04 are high-speed Si-gate CMOS devices. They provide an inverting buffer. The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.

Contextual Info: 74HC1G04; 74HCT1G04 Inverter Rev. 04 — 16 July 2007 Product data sheet 1. General description 74HC1G04 and 74HCT1G04 are high-speed Si-gate CMOS devices. They provide an inverting buffer. The HC device has CMOS input switching levels and supply voltage range 2 V to 6 V.

nec CCD LINEAR IMAGE SENSOR

Abstract: CCD linear image sensor 32-pin plastic DIP uPD3778CY CCD Linear Image Sensor 32pin uPD3778 2sc9 nec linear ccd 5000 pixel nec linear ccd sensor 74ac04 data nec CCD LINEAR IMAGE SENSOR color
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD3778 10600 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR The µPD3778 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation. The µPD3778 has 3 rows of 10600 pixels, and each row has a double-sided readout type of charge transfer register.

photocell sensor block diagram

Abstract: CCD Linear Image Sensor 32pin CCD linear array 74HC04 uPD3778 uPD3778CY tg315
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD3778 10600 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR The µPD3778 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation. The µPD3778 has 3 rows of 10600 pixels, and each row has a double-sided readout type of charge transfer register.

CCD linear array

Abstract: 74HC04 S5400
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8861 5400 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8861 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8871 10680 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8871 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8871 10680 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8871 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation.

74HC04

Abstract: pd8873cy nec CCD LINEAR IMAGE SENSOR linear image sensor 22-pin CMOS AREA IMAGE SENSOR 22pin
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8873 5400 x 5400 PIXELS × 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8873 is a color CCD (Charge Coupled Device) linear image sensor which changes optical images to electrical signal and has the function of color separation.

PD8871

Abstract: ccd Linear Sensor 10680
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8871 10680 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8871 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation.

uPD3778

Abstract: uPD3778CY linear ccd array
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD3778 10600 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR The µPD3778 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation. The µPD3778 has 3 rows of 10600 pixels, and each row has a double-sided readout type of charge transfer register.

CCD linear array

Abstract: S5347 V100 nec linear ccd sensor 32-pin CCD Linear Image Sensor 32pin
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD3798 5348 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR The µPD3798 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation. The µPD3798 has 3 rows of 5348 pixels, and each row has a single-sided readout type of charge transfer register.

2sc9

Abstract: S1068
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8870 10680 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8870 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation.

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

cds photocell

Abstract: ccd Linear Sensor 10680
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µ PD8870 10680 PIXELS x 3 COLOR CCD LINEAR IMAGE SENSOR DESCRIPTION The µ PD8870 is a color CCD Charge Coupled Device linear image sensor which changes optical images to electrical signal and has the function of color separation.