DATA SHEET 702 TRANSISTOR NPN Search Results

T 402 transistor

Abstract: 702 TRANSISTOR npn transistor+1906 pnp 8 transistor array
Contextual Info: m ic ro e le c tro n ic s group Data Sheet May 1996 Lucent Technologies Bell Labs Innovations ALA401/402 Semicustom Linear Array Features Description • High-speed CBIC process: 250 MHz NPN and PNP The ALA401/402 Semicustom Linear Arrays are inte­ grated circuits consisting of vertical NPN and PNP

TRIMMER cap no-2222 809 07015

Abstract: 702 P TRANSISTOR BLV25 702 TRANSISTOR transistor Common Base configuration transistor w 04 59 VHF transmitter circuit rf transmitter* vhf philips blv25
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification VHF power transistor BLV25 DESCRIPTION FEATURES N-P-N silicon planar epitaxial

BLV25

Abstract: 702 P TRANSISTOR br 2222 npn MGP303 MGP304
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLV25 VHF power transistor Product specification August 1986 Philips Semiconductors Product specification VHF power transistor BLV25 DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters.

Contextual Info: DATA SHEET PHOTOCOUPLER PS2702-1 ,PS2702-2,PS2702-4 HIGH ISOLATION VOLTAGE DARLINGTON TRANSISTOR SOP MULTI PHOTOCOUPLER SERIES nepoc series DESCRIPTION T he P S 2 7 0 2 -1 , P S 2702-2, P S 2702-4, are o p tica lly co u p le d Isolators c o n ta in in g a G aA s light em ittin g d io d e and an

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

nec 2741

Abstract: 2SC4226 datasheet 2SC4226 2SC4226-T1 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low in millimeters noise amplifier.

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

marking R24

Abstract: 2sc4226 nec 2741 MARKING 702 6pin ic
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The µPA801T has built-in 2 low-voltage transistors which are designed PACKAGE DRAWINGS (Unit: mm)

TD-2411

Abstract: NEC 3552 2SC5011 2SC5011-T1 2SC5011-T2 702 mini transistor P1039 1357 transistor NEC
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters PART NUMBER QUANTITY 2SC5011-T1 3 Kpcs/Reel.

NEC IC D 553 C

Abstract: nec 2741 702 mini transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PACKAGE DIMENSIONS in millimeters noise amplifier.

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION The 2SC4571 is a low supply voltage transistor designed for UHF PACKAGE DIMENSIONS Units: mm OSC/MIX. 2 . 1±0.1 It is suitable tor a high density surface mount assembly since the

2SC4571

Abstract: 2SC4571-T1 2SC4571-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4571 NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS Units: mm The 2SC4571 is a low supply voltage transistor designed for UHF OSC/MIX. 2.1±0.1 It is suitable for a high density surface mount assembly since the

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product • Low Noise, High Gain • Low Voltage Operation

sm 9142

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR UPA801T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 6-PIN 2 ELEMENTS MINI MOLD The/xPA801T has built-in 2 low -voltage tran sistors w hich are designed PACKAGE DRAWINGS (U n it: m m)

2SC4571

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR µPA804T NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD The 2SC4571 has built-in 2 transistors which were developed for UHF. PACKAGE DRAWINGS (Unit: mm) FEATURES 2.1±0.1 • High fT 1.25±0.1

transistor NEC D 587

Abstract: transistor NEC D 986 R13* MARKING TC-2365 marking R13 2SC4885 741 vtvm 230 624 533 392 P10410EJ2V0DS00 transistor NEC D 586
Contextual Info: DATA SHEET SHEET DATA SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1±0.1 • Low Voltage Use 1.25±0.1 • Low Cob : 0.9 pF TYP. Emitter to Base Voltage

transistor NEC D 882 p

Abstract: 393AN transistor 2sc 3203 nec d 1590 2sc 1329 transistor NEC b 882 nec a 634 e50p NEC D 822 P
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5011 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTO R 4 PINS SU PER MINI MOLD FEATURES PACKAGE DIMENSIONS • Small Package • High Gain Bandwidth Product in millimeters fT = 6.5 G H zT Y P . • Low Noise, High Gain

TI 9023 IC data

Abstract: 2SC4226 APPLICATION NOTES
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA81 OT HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 6-PIN 2 x 2SC4226 SMALL MINI MOLD The /xPA81 OT has built-in 2 low-voltage transistors which are designed to PACKAGE DRAW INGS

O25P

Contextual Info: DATA SHEET NEC PHOTOCOUPLER PS2702-1,PS2702-2, PS2702-4 HIGH ISOLATION VOLTAGE DARLINTON TRANSISTOR NEPOC SOP MULTI PHOTOCOUPLER Series DESCRIPTION T h e P S 2 7 0 2 -1 , P S 2702-2, P S 2702-4, are o p tica lly co u p le d iso la to rs con tain ing a G aA s light em itting d iod e and an

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

em 483

Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR /IPA804T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD The 2SC4571 has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAWINGS (U n it: m m ) FEATURES • H igh fT

TC236

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES Excellent Low NF in Low Frequency Band 2 .1± 0.1 Low Voltage Use 1.25±0.1 Low Cob : 0 .9 pF T Y P . Low Noise Voltage : 90 mV TYP.

ic 565 application

Abstract: 2SC4226
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid