semirigid
Abstract: A23J1PC-000-10 A23J2PC-000-10
Text: SMA Coaxial Connectors SMA Koaxialkontakte Technical Data Technische Daten Mechanical Data Mechanische Daten Mechanical Data Mechanische Daten Engagement torque Verbindungsdrehmoment Mating torque Anzugsdrehmoment Coupling nut retention Überwurfmutter Haltekraft
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Original
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A24J1FL-103-10
A24J1FL-103-11
A24J1FL-104-10
A24J1FL-104-11
A23J1FL-000-10
A24J1FL-000-17
A24J1FL-000-11
semirigid
A23J1PC-000-10
A23J2PC-000-10
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PDF
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48Z02
Abstract: 232268 "lithium battery pack" pinout
Text: Issued March 1997 232-2683 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data
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Original
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48Z02
48Z02
232268
"lithium battery pack" pinout
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PDF
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48Z02
Abstract: "lithium battery pack" pinout
Text: Issued March 1987 005-471 Data Pack H Static RAM with battery back-up 48Z02 Data Sheet RS stock number 301-016 A 2K ϫ 8 bit CMOS static RAM with integral lithium batteries giving data retention for up to ten years. All control and switching circuitry is included on chip for data
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Original
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48Z02
48Z02
"lithium battery pack" pinout
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PDF
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dsPIC30F2011
Abstract: DC10 DC11
Text: dsPIC30F2011/2012/3012/3013 dsPIC30F2011/2012/3012/3013 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications
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Original
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dsPIC30F2011/2012/3012/3013
dsPIC30F2011/2012/3012/3013
DS70139E)
dsPIC30F2011/2012/3012/
DS80354A-page
dsPIC30F2011
DC10
DC11
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PDF
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DC10
Abstract: DC11 6014A
Text: dsPIC30F6011A/6012A/6013A/6014A dsPIC30F6011A/6012A/6013A/6014A Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications
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Original
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dsPIC30F6011A/6012A/6013A/6014A
dsPIC30F6011A/6012A/6013A/6014A
DS70143C)
dsPIC30F6011A/6012A/
013A/6014A
DS80360A-page
DC10
DC11
6014A
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PDF
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DS1213C
Abstract: dallas ds1213c DS1213B DS1213
Text: DS1213C SmartSocket 256k www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 32K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection
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Original
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DS1213C
28-Pin
DS1213C
28-pin,
DS1213B
DS1213B
600-MIL
28-PIN
dallas ds1213c
DS1213
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PDF
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DC10
Abstract: DC11 OS65B
Text: dsPIC30F2010 dsPIC30F2010 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 22-4 on page 148) has changed from 1.5V
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Original
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dsPIC30F2010
dsPIC30F2010
DS70118G)
DS80353A-page
DC10
DC11
OS65B
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PDF
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smartsocket
Abstract: No abstract text available
Text: DS1213C SmartSocket 256k www.dalsemi.com PIN ASSIGNMENT FEATURES Accepts standard 32K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection
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Original
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DS1213C
28-Pin
28-pin,
DS1213B
DS1213C
28-PIN
smartsocket
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PDF
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IM1225Y-150
Abstract: 1225Y-150 1225Y eprom Innovative
Text: INNOVATIVE IM1225Y-150 8K X 8 Nonvolatile SRAM FEATURES Data Retention in the absence of power • Pin configuration Automatic data protection during power failure · Data Retention over 10 years · Unlimited write cycles · Conventional SRAM write cycles ·
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Original
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IM1225Y-150
225mW
1225Y
IM1225Y-150
1225Y-150
1225Y eprom
Innovative
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PDF
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dallas ds1213c
Abstract: 28-pin static ram smartsocket DS1213B DS1213C
Text: DS1213C DS1213C SmartSocket 256K FEATURES PIN ASSIGNMENT • Accepts standard 32K x 8 CMOS static RAMs • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data • Data retention time is greater than 10 years with the
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Original
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DS1213C
DS1213C
28-pintraight
DS1213B
28-PIN
dallas ds1213c
28-pin static ram
smartsocket
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PDF
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DS1213B
Abstract: DS1213C
Text: DS1213C DS1213C SmartSocket 256K FEATURES PIN ASSIGNMENT • Accepts standard 32K x 8 CMOS static RAMs • Embedded lithium energy cell retains RAM data • Self–contained circuitry safeguards data • Data retention time is greater than 10 years with the
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Original
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DS1213C
DS1213C
DS1213B
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PDF
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DS1213C
Abstract: DS1213B
Text: DS1213C SmartSocket 256k www.dalsemi.com FEATURES PIN ASSIGNMENT Accepts standard 32K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years with the proper RAM selection
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Original
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DS1213C
28-Pin
DS1213C
28-pin,
DS1213B
28-PIN
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1200 Serial RAM Chip www.maxim-ic.com FEATURES § § § § § § PIN ASSIGNMENT 1024 Bits of Read/Write Memory Low Data Retention Current for Battery Backup Applications Four Million Bits/Second Data Rate Single-Byte or Multiple-Byte Data Transfer Capability
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Original
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DS1200
16-Pin
300mil)
56-G4009-001B
W16-2*
DS1200S
DS1200S+
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PDF
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M34W
Abstract: M34W02-W
Text: M34W02 2Kbit Serial EEPROM with Software Data Protection PRELIMINARY DATA TWO WIRE I2C SERIAL INTERFACE SUPPORTS 400kHz PROTOCOL 1 MILLION ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for M34W02 – 2.5V to 5.5V for M34W02-W
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Original
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M34W02
400kHz
M34W02-W
M34W02-R
150mil
169mil
M34W02
M34W
M34W02-W
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PDF
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DS70135E
Abstract: DC10 DC11 dsPIC30F4011 4012
Text: dsPIC30F4011/4012 dsPIC30F4011/4012 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 24-4 on page 172) has changed from 1.5V
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Original
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dsPIC30F4011/4012
dsPIC30F4011/4012
DS70135E)
DS80361A-page
DS70135E
DC10
DC11
dsPIC30F4011
4012
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PDF
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DS1200
Abstract: No abstract text available
Text: DS1200 Serial RAM Chip www.maxim-ic.com FEATURES § § § § § § PIN ASSIGNMENT 1024 bits of read/write memory Low data retention current for battery backup applications Four million bits/second data rate Single-byte or multiple-byte data transfer capability
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Original
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DS1200
10-Pin
300mil)
16-Pin
DS1200
100ms.
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PDF
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DC10
Abstract: DC11
Text: dsPIC30F6010A/6015 dsPIC30F6010A/6015 Data Sheet Errata Clarifications/Corrections to the Data Sheet: 1. Module: DC Temperature and Voltage Specifications RAM Data Retention Voltage Parameter DC12 in the DC Temperature and Voltage Specifications (Table 24-5 on page 177) has changed from 1.5V
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Original
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dsPIC30F6010A/6015
dsPIC30F6010A/6015
DS70150C)
DS80359A-page
DC10
DC11
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PDF
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Untitled
Abstract: No abstract text available
Text: Low Voltage Data Retention HARRIS CMOS RAMs are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The follow ing rules insure data retention: 1. Chip Enable E must be held high during data retention; within VCC to VCC +0.3V
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OCR Scan
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PDF
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Untitled
Abstract: No abstract text available
Text: - — - Low Voltage Data Retention - HARRIS CMOS RAMs are designed with battery backup in mind. Data retention voltage and supply current are guaranteed over temperature. The following rules insure data retendtion: 1. Chip Enable E must be held high during data retention; within VCC to VCC +0.3V
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OCR Scan
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PDF
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mss1000
Abstract: MSS-1000
Text: MSS1000RKX-2S/3Q/35 ISSUE 2.0 : DECEMBER 1892 Low Data Retention C h aracteristics - L Version O nly (TA=0°C to +70°C Param eter Sym bol CS^V^-O^V Vœ for Data Retention Data Retention Current C S high to Data Retention Time S ee Retention Waveform Operation Recovery Time
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OCR Scan
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MSS1000RKX-2S/3Q/35
A0-A19
A0-A19
MOSCSQ28
mss1000
MSS-1000
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PDF
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6508 RAM
Abstract: 1m x 8 CMOS RAM
Text: PAGE LOW VOLTAGE DATA RETENTION . 2-2 INDUSTRY CMOS RAM CROSS R EFEREN CE. 2-3 1K CMOS RAM DATA SHEETS
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OCR Scan
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HM-6551
HM-6561
HM-6617
6508 RAM
1m x 8 CMOS RAM
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PDF
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DS1213B
Abstract: No abstract text available
Text: DALLAS DS1213B SmartSocket 16k/64k mmimmumm î com FEATURES PIN ASSIGNMENT Accepts standard 2K x 8 or 8K x 8 CMOS static RAMs Embedded lithium energy cell retains RAM data Self-contained circuitry safeguards data Data retention time is greater than 10 years
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OCR Scan
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DS1213B
16k/64k
28-Pin
28-pin,
24-pin
DS1213B
600-MIL
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PDF
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Untitled
Abstract: No abstract text available
Text: DS1230YL/BL DALLAS DS1230YL/BL 256K Nonvolatile SRAM SEMICONDUCTOR NOT RECOMMENDED FOR NEW DESIGNS. SEE PS1230Y/AB DATA SHEET. FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power • Data is automatically protected during power loss
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OCR Scan
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DS1230YL/BL
PS1230Y/AB
DS1230YL)
DS1230BL)
34-PIN
Modul00
DS1230YL/BL
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PDF
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DS1213C
Abstract: smartsocket
Text: DS1213C DALLAS SEMICONDUCTOR FEATURES DS1213C SmartSocket 256K PIN ASSIGNMENT • Accepts standard 32K x 8 CMOS static RAMs • Embedded lithium energy cell retains RAM data • Self-contained circuitry safeguards data • Data retention time is greater than 10 years with the
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OCR Scan
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DS1213C
DS1213C
28-PIN
28-pin,
DS1213B
smartsocket
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PDF
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