533423-2
Abstract: M21097 dupont 9450 AMP 11392 plug MIL-22759 Catalog 1308940 revised 5-03 3-582307-1 MIL-C-22759 AMP 11392 mil-m-24519 GLCP-30F
Text: Printed Circuit Board Connectors Table of Contents MICRODOT Rectangular .050 [1.27] Connectors Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6003 Twist Pin 24 Gauge Contact Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6004
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5N60M
Abstract: No abstract text available
Text: STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 Ω typ., 3.5 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes 3 VDS @ TJmax RDS on max ID 650 V 1.4 Ω 3.5 A STD5N60M2 1
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STD5N60M2,
STP5N60M2,
STU5N60M2
O-220
STD5N60M2
STP5N60M2
O-220
DocID025318
5N60M
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5N60M
Abstract: No abstract text available
Text: STD5N60M2, STP5N60M2, STU5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus low Qg Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - preliminary data Features TAB Order codes 3 1 VDS @ TJmax RDS on max ID 650 V 1.4 Ω 3.7 A STD5N60M2
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STD5N60M2,
STP5N60M2,
STU5N60M2
O-220
STD5N60M2
STP5N60M2
O-220
DocID025318
5N60M
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stF5N60M
Abstract: 5N60M
Text: STF5N60M2 N-channel 600 V, 1.26 Ω typ., 3.7 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order code VDS @ TJmax RDS on max ID STF5N60M2 650 V 1.4 Ω 3.7 A • Extremely low gate charge 1 2 • Lower RDS(on) x area vs previous generation
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STF5N60M2
O-220FP
O-220FP
DocID025320
stF5N60M
5N60M
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60Z Preliminary Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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5N60Z
5N60Z
QW-R502-909
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5N60K
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60K-MT Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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5N60K-MT
5N60K-MT
QW-R205-038
5N60K
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utc 5n60l
Abstract: 5N60L 5N60L-TF2-T 5N60L-TN3-R 5N60 5N60G
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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O-220
O-220F
O-220F1
O-220F2
QW-R502-065
utc 5n60l
5N60L
5N60L-TF2-T
5N60L-TN3-R
5N60
5N60G
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5N60A
Abstract: 5N60B 5N60 5n60 mosfet UTC5n60 utc 5n60l 5N60 datasheet 100SU MOSFET having TO-252 PAckage 5N60L
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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QW-R502-065
5N60A
5N60B
5N60
5n60 mosfet
UTC5n60
utc 5n60l
5N60 datasheet
100SU
MOSFET having TO-252 PAckage
5N60L
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5N60G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET 1 TO-220F TO-220 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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O-220F
O-220
O-220F1
O-220F2
QW-R502-065
5N60G
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5N60B
Abstract: 5N60 5n60-b 5N60A utc 5n60l 5N60 datasheet 5N60L
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET 1 DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-252
O-251
QW-R502-065
5N60B
5N60
5n60-b
5N60A
utc 5n60l
5N60 datasheet
5N60L
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G5N60
Abstract: 5n60 100SU utc 5n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-252
O-251
O-220
QW-R502-065
G5N60
5n60
100SU
utc 5n60l
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5n60
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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QW-R502-065
5n60
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5N60G
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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QW-R502-065
5N60G
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600/650 Volts N-CHANNEL MOSFET DESCRIPTION The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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5N60L
QW-R502-065
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5N60
Abstract: 5N60L 5N60-TA3-T UTC5N60 5N60 datasheet 5N60-TF3-T utc 5n60l
Text: UNISONIC TECHNOLOGIES CO., LTD 5N60 Power MOSFET 4.5 Amps, 600 Volts N-CHANNEL MOSFET 1 DESCRIPTION TO-220 The UTC 5N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche
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O-220
O-220F
5N60L
QW-R502-065
5N60
5N60L
5N60-TA3-T
UTC5N60
5N60 datasheet
5N60-TF3-T
utc 5n60l
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Infineon Specific HCI Commands bluetooth
Abstract: PBA31308 Q2331308 G0644 CLK32 PMB8753 bluemoon crystal 26 Mhz Bluetooth RSSI circuit diagram infineon HCI
Text: P rod uc t O v erv i ew T3130-8XV10PO5-7600 Jan 2007 PBA 31308 Bluetooth QD ID : B012097/B012098 UniStone BlueMoon Universal Platform N e v e r s t o p t h i n k i n g . Edition 2007-01-31 Published by Infineon Technologies AG 81726 Munich, Germany Infineon Technologies AG 2007.
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T3130-8XV10PO5-7600
B012097/B012098
T3130-8XV10PO5-7600,
Infineon Specific HCI Commands bluetooth
PBA31308
Q2331308
G0644
CLK32
PMB8753
bluemoon
crystal 26 Mhz
Bluetooth RSSI circuit diagram
infineon HCI
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K6R4016V1D-UI10
Abstract: LD0506 BLM21PG331SN1D TP0950 R1004 lm4480 transistor c1026 K6R4016V1D 7-segment LED display 1 to 99 vhdl FB0701
Text: LatticeMico32/DSP Development Board for LatticeECP2 User’s Guide June 2009 Revision: EB26_02.6 LatticeMico32/DSP Development Board for LatticeECP2 User’s Guide Lattice Semiconductor Introduction This document describes the features and functionality of the LatticeMico32 /DSP Development Board for
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LatticeMico32/DSP
LatticeMico32TM/DSP
LatticeMico32
100mm,
150mm,
120mm,
K6R4016V1D-UI10
LD0506
BLM21PG331SN1D
TP0950
R1004
lm4480
transistor c1026
K6R4016V1D
7-segment LED display 1 to 99 vhdl
FB0701
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7N60B equivalent
Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches
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MS-013
10-Pin
5M-1994
MO-229
7N60B equivalent
18N50 equivalent
ixgh 1499
MOSFET smd 4407
IXDD 614
C 547 B W57 BJT transistor
r1275ns20l
R1271ns12C
IXYS CS 20-22 MOF1
IXTP 220N04T2
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FCD5N60
Abstract: No abstract text available
Text: SuperFET TM FCD5N60 / FCU5N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
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FCD5N60
FCU5N60
FCU5N60
FCU5N60TU
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5n60c
Abstract: No abstract text available
Text: TM FQD5N60C / FQU5N60C 600V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to
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FQD5N60C
FQU5N60C
FQD5N60CTF
FQD5N60CTM
5n60c
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br 5n60
Abstract: 5N60 MOSFET IGSS 100nA VDS 20V MIL-HDBK-263
Text: E 5N60 VDSS=600V; ID=5.0A; RDS ON =2.2Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description DraintoSource Breakdown Voltage
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100nA
br 5n60
5N60
MOSFET IGSS 100nA VDS 20V
MIL-HDBK-263
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Untitled
Abstract: No abstract text available
Text: Aerospace/Ruggedized Printed Circuit Board Connectors Catalog 296350 HDI .075 [1.91] Staggered Centerline Connectors AMP-HDI, 6-Row, 306-Position, LRM Connectors with Additonal, 4-Position, Fiber Optic Contacts Part No. 445270-1 Material and Finish: Housing— Polyphenylene sulfide.
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306-Position,
MIL-M-24519
QQ-C-533
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Untitled
Abstract: No abstract text available
Text: Aerospace/Ruggedized Printed Circuit Board Connectors HOI .075 [1.91] Staggered Centerline Connectors Catalog 296350 Issued 9-97 Continued AMP-HDI, 6-Row, 305-Position, LRM Plug Assembly with Additional 4-Position, Fiber Optic Contacts Part No. 445269-1
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305-Position,
MIL-M-24519
MIL-T-29504/5
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Untitled
Abstract: No abstract text available
Text: AMP Aerospace/Ruggedized Printed Circuit Board Connectors Catalog 296350 Issued 9-97 HDI .075 [1.91] Staggered Centerline Connectors AMP-HDI, 6-Row, 306-Position, LRM Connectors with Additonal, 4-Position Fiber Optic Contacts Part No. 445270-1 Material and Finish:
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306-Position,
C-533
-800-522-67R?
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