DARLINGTON TRANSISTOR WITH BUILT-IN TEMPERATURE C Search Results
DARLINGTON TRANSISTOR WITH BUILT-IN TEMPERATURE C Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| GT30J110SRA |
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IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) |
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| TTC5886A |
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NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns |
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| TTA2097 |
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PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns |
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| TCTH022BE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function |
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| TCTH021BE |
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Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type |
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