Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    DARLINGTON TRANSISTOR WITH BUILT-IN TEMPERATURE Search Results

    DARLINGTON TRANSISTOR WITH BUILT-IN TEMPERATURE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Open-drain type Visit Toshiba Electronic Devices & Storage Corporation

    DARLINGTON TRANSISTOR WITH BUILT-IN TEMPERATURE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    t01 transistor

    Abstract: STD03N SANKEN AUDIO sanken transistor TRANSISTOR sanken catalog std03 STD03P darlington transistor for audio power application 8DARLINGTON sanken power transistor
    Text: Darlington Transistor with built-in compensation diodes STD03P March, 2006 •Package -MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode


    Original     		PDF STD03P ---MT-105 STD03N T01-002EA-060309 t01 transistor STD03N SANKEN AUDIO sanken transistor TRANSISTOR sanken catalog std03 STD03P darlington transistor for audio power application 8DARLINGTON sanken power transistor

    TRANSISTOR sanken catalog

    Abstract: t01 transistor sanken power transistor sanken t01 STD03N darlington transistor for audio power application darlington transistor with built-in temperature c darlington transistor with built-in temperature sanken audio Power 5pin darlington
    Text: Darlington Transistor with built-in compensation diodes STD03P March, 2006 •Package -MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode


    Original     		PDF STD03P STD03N ---MT-105 T01-002EA-060309 TRANSISTOR sanken catalog t01 transistor sanken power transistor sanken t01 STD03N darlington transistor for audio power application darlington transistor with built-in temperature c darlington transistor with built-in temperature sanken audio Power 5pin darlington

    std03n

    Abstract: t01 transistor TRANSISTOR sanken catalog sanken power transistor T01001 sanken sanken audio
    Text: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode


    Original     		PDF STD03N STD03P MT-105 T01-001EA-060309 std03n t01 transistor TRANSISTOR sanken catalog sanken power transistor T01001 sanken sanken audio

    TRANSISTOR sanken catalog

    Abstract: SANKEN POWER TRANSISTOR t01 transistor SANKEN AUDIO STD03N STD03P T01001 B105 sanken transistor "Sanken Rectifiers"
    Text: Darlington Transistor with built-in compensation diodes STD03N March, 2006 •Package- MT-105 TO3P 5-pin ■Features ● High collector power dissipation: Pc=160W (with TO-3P) ● Low internal impedance by means of thinner die structure ● Built-in temperature compensation diode


    Original     		PDF STD03N MT-105 STD03P 10that T01-001EA-060309 TRANSISTOR sanken catalog SANKEN POWER TRANSISTOR t01 transistor SANKEN AUDIO STD03N STD03P T01001 B105 sanken transistor "Sanken Rectifiers"

    FJB102

    Abstract: No abstract text available
    Text: FJB102 High Voltage Power Darlington Transistor FJB102 High Voltage Power Darlington Transistor Features • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. • Low Collector-Emitter Saturation Voltage • High Collector-Emitter Sustaining Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors


    Original     		PDF FJB102 FJB102

    Untitled

    Abstract: No abstract text available
    Text: FJB102 High Voltage Power Darlington Transistor FJB102 High Voltage Power Darlington Transistor Features • High DC Current Gain : hFE=1000 @ VCE=4V, IC=3A Min. • Low Collector-Emitter Saturation Voltage • High Collector-Emitter Sustaining Voltage • Monolithic Construction with Built-in Base-Emitter Shunt Resistors


    Original     		PDF FJB102 FJB102 FJB102TM

    LB1273R

    Abstract: LB1273
    Text: Ordering number:ENN667B Monolithic Digital IC LB1273R 6-Unit, Darlington Transistor Array Overview Package Dimensions The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive. With built-in protective diodes against negative inputs, it is advantageous in designing drive circuits for printer calculators and cash registers.


    Original     		PDF ENN667B LB1273R 004A-DIP14TD 26max 18-digit 230mA LB1273R LB1273

    TRANSISTOR ARRAY

    Abstract: NTE2083
    Text: NTE2083 Integrated Circuit 6−Segment, 150mA Darlington Transistor Array Description: The circuit construction of this IC is a Darlington transistor array with six units, most suitable for printer hammer drive, lamp, and relay drive. With built−in protective diodes against negative inputs, it is advantageous in designing drive circuits for printer calculators and cash registers.


    Original     		PDF NTE2083 150mA 18-digit 230mA TRANSISTOR ARRAY NTE2083

    Hitachi DSA002756

    Abstract: No abstract text available
    Text: 2SD2423 Silicon NPN Epitaxial, Darlington Application Low frequency power amplifier Features The transistor with a built-in zener diode of surge absorb. Outline 2SD2423 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage


    Original     		PDF 2SD2423 Hitachi DSA002756

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL DARLINGTON TRANSISTOR TIP140F/141F/142F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP145F/146F/147F ABSOLUTE MAXIMUM RATINGS


    Original     		PDF TIP140F/141F/142F TIP145F/146F/147F TIP140T TIP141T TIP142T

    TIP145F

    Abstract: TIP146F TIP147F 147F
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS


    Original     		PDF TIP145F/146F/147F TIP140F/141F/142F TIP145F TIP146F TIP147F TIP145F TIP146F TIP147F 147F

    TIP102

    Abstract: NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, IC=3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE


    Original     		PDF TIP100/101/102 O-220 TIP105/106/107 TIP101 TIP102 TIP100 TIP102 NPN Transistor VCEO 80V 100V DARLINGTON IC 8A TIP102 Darlington transistor NPN Transistor TO220 VCEO 80V 100V NPN Transistor 8A TIP100 TIP101 NPN Transistor VCEO 80V 100V DARLINGTON TO 106 transistor base collector emitter

    TIP147F

    Abstract: TIP146F TIP145F
    Text: PNP EPITAXIAL DARLINGTON TRANSISTOR TIP145F/146F/147F HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3PF Complement to TIP140F/141F/142F ABSOLUTE MAXIMUM RATINGS


    Original     		PDF TIP145F/146F/147F TIP140F/141F/142F TIP145F TIP146F TIP147F TIP146F TIP145F

    2sd1525 toshiba

    Abstract: No abstract text available
    Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington Power Transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.


    Original     		PDF 2SD1525 2sd1525 toshiba

    Untitled

    Abstract: No abstract text available
    Text: 2SD1525 TOSHIBA Transistor Silicon NPN Triple Diffused Type Darlington power transistor 2SD1525 High Current Switching Applications • Unit: mm High collector current: IC = 30 A • High DC current gain: hFE = 1000 (min) (VCE = 5 V, IC = 20 A) • Monolithic construction with built-in base-emitter shunt resistor.


    Original     		PDF 2SD1525

    300V transistor npn 15a

    Abstract: MP6501 s1,3/2iv
    Text: MP6501 SILICON NPN TRIPLE DIFFUSED TY PE DARLINGTON POWER TRAN SISTO R 6 IN 1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package. . With Built-in Free Wheeling Diode.


    OCR Scan     		PDF MP6501 300V transistor npn 15a MP6501 s1,3/2iv

    2sd2011

    Abstract: 2SB1333 transistor 2SD 2sd darlington
    Text: 2SD2011 Transistor, NPN, Darlington Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • damper diode incorporated • built-in resistors between base and emitter • complementary pair with 2SB1333


    OCR Scan     		PDF 2SD2011 2SB1333 2SD2011, 2sd2011 transistor 2SD 2sd darlington

    MG10G6EL2

    Abstract: w327 mg10g
    Text: MG10G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package. . With Built-in Free Wheeling Diode.


    OCR Scan     		PDF MG10G6EL2 03CJ10 MG10G6EL2 w327 mg10g

    MG15G6EL2

    Abstract: No abstract text available
    Text: MG15G6EL2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . 6 Darlington Transistor are Built-in to 1 Package . With Built-in Free Wheeling Diode. . High DC Current Gain


    OCR Scan     		PDF MG15G6EL2 MG15G6EL2

    2SB1333

    Abstract: No abstract text available
    Text: 2SB1333 Transistor, PNP Features Dimensions Units : mm • available in MRT package • Darlington connection provides high dc current gain (hFE) • • damper diode is incorporated built in resistors between base and emitter complementary pair with 2SD2011


    OCR Scan     		PDF 2SB1333 2SD2011 2SB1333 2SB1333,

    TIP 102 transistor

    Abstract: transistor tip 107 Transistor tip 102
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE=4V, lc = 3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS


    OCR Scan     		PDF TIP100/101/102 TIP105/106/107 TIP101 TIP 102 transistor transistor tip 107 Transistor tip 102

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 05/106/107 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS


    OCR Scan     		PDF TIP100/101/102 TIP105 TIP106 TIP107

    Untitled

    Abstract: No abstract text available
    Text: Standard ICs 6-channel high current driver BA664 The BA664 is an 1C with a built-in clamp diode, developed for the purpose of minimizing attachments, and contains a Darlington transistor array of six circuits with input resistance. Input and output are directed in the same direction


    OCR Scan     		PDF BA664 BA664 100mA

    tip 102

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE


    OCR Scan     		PDF TIP100/101/102 O-220 TIP105/106/107 TIP101 tip 102