DARLINGTON TIN 1A Search Results

FZT600

Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 ISSUE 2 -FEBRUARY 1995- - m FEATURES * 2 A c o n tin u o u s c u rre n t * 140 VO LT VCE0 * G uara n te e d h FE S p e cifie d up to 1A

2SB1178

Abstract: 2SB1178A 2SD1748 2SD1748A
Contextual Info: Power Transistors 2SD1748, 2SD1748A Silicon NPN triple diffusion planar type Darlington Unit: mm For low-freauency power amplification Complementary to 2SB1178 and 2SB1178A 7.0±0.3 3.5±0.2 M Di ain sc te on na tin nc ue e/ d • Features 0.8±0.2 7.2±0.3

DN8695

Abstract: HZIP023-P-0138
Contextual Info: DN8695 9-circuit Darlington Driver Array High Breakdown Voltage : 50V, Large Drive Current : 1.5A Unit : mm (12.33) 11.3±0.25 8.2±0.3 ø3.6 M Di ain sc te on na tin nc ue e/ d • Overview 1.27 1.8±0.25 3.5±0.3 • Driving of the printer motors, etc.

S0T223

Abstract: FZT600A FZT600B FZT600
Contextual Info: S 0 T 2 2 3 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 FEATURES: * 2 W POWER DISSIPATION * 2 A CO N TIN U O U S lc * 4 A PEAK lc * GUARANTEED HFE SPECIFIED UP TO 1A PAR TM AR KIN G D ETAIL - FZ T 6 00 ABSOLUTE MAXIMUM RATINGS PARAM ETER SYMBOL

Contextual Info: Power Transistors 2SD2209 Silicon NPN triple diffusion planar type Darlington Unit: mm 7.0±0.3 For power amplification and switching 3.5±0.2 7.2±0.3 0.8±0.2 3.0±0.2 • Features 0.85±0.1 10.0 –0. ● +0.3 M Di ain sc te on na tin nc ue e/ d 1.0±0.2

2SB1493

Abstract: 2SD2255
Contextual Info: Power Transistors 2SB1493 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2255 M Di ain sc te on na tin nc ue e/ d Unit: mm 4.0±0.1 4.0±0.1 10.5±0.5 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 φ3.2±0.1 3.5 16.2±0.5

2SB1493

Abstract: 2SD2255
Contextual Info: Power Transistors 2SD2255 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1493 M Di ain sc te on na tin nc ue e/ d Unit: mm 15.0±0.5 4.0±0.1 4.0±0.1 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 φ3.2±0.1 3.5 ●

2SB1253

Abstract: 2SB1253 equivalent 2SD1893
Contextual Info: Power Transistors 2SB1253 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD1893 M Di ain sc te on na tin nc ue e/ d Unit: mm ● 0.7 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit –130 V –110 V Collector to base voltage

2SB1253

Abstract: 2SD1893
Contextual Info: Power Transistors 2SD1893 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1253 M Di ain sc te on na tin nc ue e/ d Unit: mm ● 0.7 • Absolute Maximum Ratings TC=25˚C Symbol Ratings Unit 130 V 110 V Collector to base voltage

2SD2209

Contextual Info: Power Transistors 2SD2209 Silicon NPN triple diffusion planar type Darlington Unit: mm 7.0±0.3 For power amplification and switching 3.5±0.2 M Di ain sc te on na tin nc ue e/ d 7.2±0.3 0.8±0.2 3.0±0.2 • Features +0.3 1.0±0.2 0.85±0.1 0.4±0.1 10.0 –0.

2SB1531

Abstract: 2SD2340 2sb15
Contextual Info: Power Transistors 2SB1531 Silicon PNP epitaxial planar type Darlington For power amplification Complementary to 2SD2340 Unit: mm M Di ain sc te on na tin nc ue e/ d 15.0±0.5 4.0±0.1 4.0±0.1 2.0±0.1 15.0±0.2 20.0±0.3 19.0±0.3 φ3.2±0.1 3.5 ● Optimum for 40W HiFi output

FZT705

Contextual Info: FZT705 SOT223 PIMP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FEATURES * 2W POWER DISSIPATION. * 2A C O N TIN U O U S lc. * 4A PEAK lc. * GUARANTEED H fe SPECIFIED UP TO 2A. * COMPLEM ENTARY T Y P E -F Z T 6 0 5 PARTMARKING DETAIL - FZT705 ABSOLUTE M A XIM U M RATINGS

FCX604

Contextual Info: SOT89 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FCX604 FEATURES: * 1A CO N TIN U O U S COLLECTOR CURRENT * 1 .5 W POWER DISSIPATION * GUARANTEED HFE SPEC IFIED UP T O 2 A * F A S T S W IT C H IN G P A R T M A R K IN G D E T A IL - 6 0 4 ABSOLUTE MAXIMUM RATINGS

Contextual Info: ZTX600 ZTX601 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ISSUE 2 -JU N E 94_ FEATURES * 160 V o lt VCE0 * 1 A m p c o n tin u o u s c u rre n t * G ain o f 5K a t lc=1 A m p * Ptot= 1 W a tt c . f E-Line

Contextual Info: NPN Silicon Planar Medium Power Darlington Transistors ZTX 602 Z TX 603 FEATURES • • • • • 1 .5 W p o w e r d issipation 1A co n tin u o u s co lle cto r cu rre n t 4 A peak co lle cto r cu rre n t G uaranteed hFE specified up to 2 A Fast sw itc h in g

SE153

Abstract: se150 SE-150 se151 SE154
Contextual Info: PNP Silicon Planar Medium Power Darlington Transistor ZTX704 ZTX705 FEATURES • • • • • 1 ,5 W p ow er dissipation 1 A co n tin u o u s collector current 4 A peak collector current Guaranteed h FE specified up to 2 A Fast sw itc h in g D E S C R IP T IO N

FT5758M

Abstract: FT5755M FT5755 ft5755m DARLINGTON TRANSISTOR ARRAY
Contextual Info: Januar/ 1990 Edition 1.1 FUJITSU PRODUCT PROFILE . FT5755M, FT5758M Silicon Darlington Transistor Array ABSOLUTE M AXIM UM RATINGS Ta = 2 5 ° C I R a tin g S ym bol S to ra g e T e m p e ra tu re T«g J u n c tio n T e m p e ra tu re T¡ C o n d itio n U n it

KSD985

Abstract: KSD986
Contextual Info: NPN EPITAXIAL SILICON DARLINGTON TRANSISTO R KSD985/986 LOW FREQUENCY POWER AMPLIFIER LOW SPEED SW ITCHING INDUSTRIAL USE A BSOLUTE M AXIMUM RATINGS C h a r a c te r is tic Sym bol R a tin g U n it C o l le c to r-B a s e V o lta g e VcEO 150 V C o lle c to r-E m itte r V o lta g e : K S D 9 8 5

ZTX 15

Abstract: ZTX 100
Contextual Info: PNP SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTORS ZTX704 ZTX705 ISSUE 3 -M A Y 94 * 120 V o lt V CE0 * 1 A m p c o n tin u o u s c u rre n t * G a in o f 3 K a t lc=1 A m p * Pt01=1 W a tt A P P L IC A T IO N S * L a m p , s o le n o id an d re la y d riv e rs

Contextual Info: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • Complementary to TIP110/111/112

TIP115

Abstract: TIP117 TIP116 2A 80v complementary transistor 60V transistor npn 2a
Contextual Info: PNP EPITAXIAL TIP115/116/117 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -1A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to T IP 1 10/111/112

tektronix type 576 curve tracer

Abstract: tektronix 576 curve tracer Tracer 176 MR756 2n4401 die DIODO 4001 real time application of ASTABLE mode AN915 MOTOROLA line frequency diode AN915
Contextual Info: AN915 MOTOROLA Semiconductor Products Inc. Application Note CHARACTERIZING COLLECTOR-TO-EMITTER AND DRAIN-TO-SOURCE DIODES FOR SWITCHMODE APPLICATIONS Prepared by Al Pshaenich Motorola Inc., Semiconductor Group Phoenix, Arizona ABSTRACT Most power Darlington transistors and power MOSFETs con­

ULN2003NA

Abstract: transistor af 178 ms4581p 8ch pnp DARLINGTON TRANSISTOR ARRAY DARLINGTON 3A 100V npn array pnp darlington array ULN ULN2004NA 54566P pnp transistor array uln TD62981P
Contextual Info: [1] INDEX 1. IFD Family Tree [ 1 ] INDEX 1. IFD Family Tree [i]n t e r -@a c e g n v e r — Transistor-Array — Monolithic Bipolar Series Array Series |T r a n s i s t o r | [ A r r a y ] |DM O S| T r a n s i s t o r |A r r a y | — Multi-Chip — Module

Contextual Info: TRANSISTOR MODULE SQP200A40/60 UL;E76102 M S Q D 2 0 0 A is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for