DARLINGTON RECTIFIER Search Results

2n222 TRANSISTOR

Abstract: Ferroxcube core MR826 equivalent 1N493 transistor 2n222
Contextual Info: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS

1N493

Abstract: transistor 2N222
Contextual Info: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS

Contextual Info: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS

B5742G

Abstract: high voltage fast switching transistor for ignition coil drivers application of diode 2n222 2n222 TRANSISTOR
Contextual Info: MJB5742T4G NPN Silicon Power Darlington Transistors The Darlington transistors are designed for high−voltage power switching in inductive circuits. Features http://onsemi.com • These Devices are Pb−Free and are RoHS Compliant POWER DARLINGTON TRANSISTORS

MJE5740

Abstract: MJE5742 MJE-5740 MJE5740G MJE5742G
Contextual Info: MJE5740, MJE5742 MJE5742 is a Preferred Device NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. Features • Pb−Free Packages are Available* POWER DARLINGTON

2SD418

Abstract: TIP33C equivalent k 3436 transistor IR647 TIP121 transistor buv18a BU108 2SC1086 tip122 motor control 2N6023
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000  Data Sheet Designer's SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,

MJ10006

Abstract: MJ10007 1N4937 mj10006 equivalent
Contextual Info: ON Semiconductort MJ10007 * SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 10 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 150 WATTS The MJ10007 Darlington transistor is designed for high–voltage,

mj10000

Abstract: MJ10001
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The M J10000 Darlington transistor is designed for high-voltage, high-speed,

MJ10005 equivalent

Abstract: MJ10005 transistor mj10005 1N4937 MJ10004
Contextual Info: ON Semiconductort MJ10005 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 VOLTS 175 WATTS The MJ10005 Darlington transistor is designed for high–voltage,

MJ10016

Abstract: MJ10015 1N4937
Contextual Info: ON Semiconductort MJ10015 MJ10016 SWITCHMODEt Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for

MJ10009

Abstract: 1N4937 2N3762 MTP3055E
Contextual Info: ON Semiconductort MJ10009 * SWITCHMODEt Series NPN Silicon Power Darlington Transistor with Base-Emitter Speedup Diode *ON Semiconductor Preferred Device 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 450 and 500 VOLTS 175 WATTS The MJ10009 Darlington transistor is designed for high–voltage,

MC7812Ck

Abstract: MC7805CK MC7815CK MC7824CK MC7808CK MC7806CK LM7805k LM7805KC MC7815CK TO3 LM7812KC
Contextual Info: • High power, high gain Darlington transistors • VcEO 40V, 60V, 80V, 100V PMD 10K,11K,12K,13K, 16K,17K Darlington transistors CASE TEM PERATURE Tc 75°C • The only glass passivated 200°C operating junction tem perature Darlington power transistor range

ITC117PL

Contextual Info: ITC117PL Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Blocking Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 20 100 120

mj10016

Abstract: 2sc1173 equivalent Silicon NPN Power Transistors bd139 equivalent equivalent of TIP122 mje340 equivalent BD435/fw26025a1 equivalent 2N6059 equivalent 2sd526 equivalent 2N3773 equivalent MJE371 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10015 MJ10016 SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high–voltage,

ITC117P

Contextual Info: ITC117P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000

ITC135P

Contextual Info: ITC135P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Blocking Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000

ITC137P

Contextual Info: ITC137P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000

MJ10000

Abstract: MJ10001 1N4937 voltage regulators 6 amp to3
Contextual Info: MOTOROLA Order this document by MJ10000/D SEMICONDUCTOR TECHNICAL DATA MJ10000 Designer's  Data Sheet SWITCHMODE Series NPN Silicon Power Darlington Transistor 20 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 350 VOLTS 175 WATTS The MJ10000 Darlington transistor is designed for high–voltage, high–speed,

Contextual Info: ITC137P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000

Contextual Info: ITC135P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Blocking Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000

transistor w16

Contextual Info: ITC117P Integrated Telecom Circuits INTEGRATED CIRCUITS DIVISION Parameter Relay Load Voltage Relay Load Current Relay On-Resistance max Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 15 100 120 10,000

j10016

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M J10015 M J10016 SWITCHMODE Series NPN Silicon Power Darlington TVansistors w ith B ase-Em itter Speedup Diode 50 AMPERE NPN SILICON POWER DARLINGTON TRANSISTORS 400 AND 500 VOLTS 250 WATTS The MJ10015 and MJ10016 Darlington transistors are designed for high-voltage,

transistor r02

Abstract: DARLINGTON phototransistor 14 b0107
Contextual Info: ITC117PL Integrated Telecom Circuits Parameter Relay Blocking Voltage Relay Load Current Relay Max RON Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 20 100 120 10,000 Units V mA  V mA - Features • Current Limiting

Contextual Info: ITC117PL Integrated Telecom Circuits Parameter Relay Blocking Voltage Relay Load Current Relay Max RON Bridge Rectifier Reverse Voltage Darlington Collector Current Darlington Current Gain Rating 350 120 20 100 120 10,000 Units V mA  V mA - Features • Current Limiting