DAM K TRANSISTOR Search Results

2N3119

Contextual Info: 2 N 3 119 sem iconductor Corp. Central Sem iconductor Corp. NPN SILICON TRANSISTOR ♦I Central Semiconductor Corp. JEDEC TO-39 CASE 1 4 5 A dam s Avenue Hauppauge, N ew York 11 7 8 8 J t b L K I H! I UN The CENTRAL SEMICONDUCTOR 2 N 3 119 type is a silicon NPN transistor manufactured by the

D4027BC

Contextual Info: O ctober 1987 Revised January 1999 SEMICONDUCTOR TM General Description All inputs are protected a gainst dam age due to static dis­ charge by diode clam ps to V DD and V s s- The C D4027BC dual J-K flip-flops are m onolithic com ple­ m entary MOS CM OS integrated circuits constructed with

4027bc

Abstract: D4027BC
Contextual Info: O ctober 1987 Revised Ja nuary 1999 SEMICONDUCTOR!!^ General Description All inputs are protected against dam age due to static dis­ charge by diode clam ps to V DD and V s s- The C D 4027BC dual J-K flip-flops are m onolithic com ple­ m entary M OS CM OS integrated circuits constructed with

diode sy 345

Abstract: diode SY 192 sd 339 sy 320 diode SD 338 SY 345 KT 829 b k3451 KT 828 A SD337
Contextual Info: SERVICE-MITTEILUNGEN V E B R F T I N D U S T R I E V E R T R I E B R U N D F U N K UND F E R N S E H E N t B i n n a |r a d i o - t e l e v i s i o n I Ausgobe 1-2 _ _ Febr. 89 1-7 Mitteilung aus dam VEB RFT IV RuF Leipzig, Organisation Plan der Inventurtermine Ersatztell/sroßhandel 1989

IN 508 DIODE

Abstract: sd5072 SD-50 Diode diode WO KSD5071
Contextual Info: TRANSISTORS FUNCTION GUIDE 2.4. Horizontal Defelection Output Transistors 2.4.1. T O -3PF Type Transistors V CE sat (V) h FE V CBO (V) V CEO lc Device (V) (A) (NPN) 150 800 2.5 K SD 507 0 5 0.5 3.5 KSD5071 5 0.5 Sw itching Time «ON MAX tsTG MAX tf MAX < "S )

Contextual Info: Transistors Operation notes Operation notes •S e le c tin g semiconductor devices ever, taking into consideration device deviations, it is The reliability of semiconductor devices is determined essential that the rated voltage not be exceeded. primarily by conditions of u se. W hen using sem icon­

Contextual Info: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP4N60E, PHB4N60E SYMBOL QUICK REFERENCE DATA d R epetitive A valanche Rated Fast sw itching S table off-state characteristics High therm al cycling perform ance

37n06

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T re n c h M O S transistor L o g i c level FET FEATURES • • • • • • PHP37N06LT, P H B 3 7N 06 LT SYMBOL ’Trench’ technology Very low on-state resistance Fast sw itching

TRANSISTOR D 1765

Abstract: TRANSISTOR D 2398 MARKING BB5 ic b1316 ic bb5 B1580 12SB1316 DIODE B1316 transistor 1765
Contextual Info: 2SB1580 12SB1316 / 2SB1567 / 2SB1287 2SD2195 / 2SD1980 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s 1 2 3 4 ) ) ) ) •A b s o lu te maximum ratings (Ta~25"C } D arlington connection fo r high D C current gain.

BC847

Abstract: LP2951 MRF6522-70 MRF6522-70R3
Contextual Info: MOTOROLA O rder this docum ent by M RF6522—70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line M RF6522-70 M RF6522-70R3 RF Pow er Field E ffect Transistors N-Channel Enhancement-Mode Lateral MOSFETs D e s ig n e d fo r G S M 9 0 0 fre q u e n c y b a n d , th e h igh g a in and b ro a d b a n d

Contextual Info: MOTOROLA Order this document by MHW5342T/D SEMICONDUCTOR TECHNICAL DATA The RF Line M HW 5342T 4 5 0 M H z CATV A m p lifie r Designed specifically for 450 MHz CATV applications. Features ion-im planted arsenic emitter transistors with 7.0 GHz f j and an all gold metallization system.

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DESCRI PTIO N N -channel enhancem ent m ode standard level tie ld -e tte ct pow er tran sistor in a plastic envelope

K9524

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DE SCRIPTION N -channel enhancem ent m ode logic level tie ld -e tte ct pow er tran sistor in a plastic envelope using ’t r e n c h ’

MFE824

Abstract: Field-Effect Transistors 10mmho
Contextual Info: MFE824 silicon SILICON N-CHANNEL N-CHANNEL MOS FIELD-EFFECT TRANSISTORS MOS FIELD-EFFECT TRANSISTORS Depletion-Enhancem ent Mode. (Type B) M O S Field-E ffect Tran­ sistors designed fo r use in smoke detector circuits. • Low Gate Reverse Current — *GSS " 1-0 pA dc (M ax) @ V q s = 10 Vdc

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DESCRI PTIO N N -channel enhancem ent m ode standard level tie ld -e tte ct pow er tran sistor in a plastic envelope

psp 1004

Contextual Info: HIP0061 HARRIS S E M I C O N D U C T O R 60V, 3.5A, 3-Transistor C o m m o n So urce ESD Protected Po wer M O S F E T Array April 1997 Features Description • T h r e e 3>5A P o w e r M O S N - C h a n n e l T r a n s i s t o r s The HIP0061 is a power MOSFET array that consists of

Contextual Info: HIP0061 S e m iconductor 60V, 3.5A, 3-Transistor Common Source ESD Protected Power MOSFET Array December 1997 Features Description • Three 3.5A Power MOS N-Channel Transistors The HIP0061 is a power MOSFET array that consists of three matched N-Channel enhancement mode MOS transis­

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor L o g i c level F E T G E N E R A L DESCRI PTIO N N -channel enhancem ent m ode logic level tie ld -e tte ct pow er tran sistor in a plastic envelope suitable tor surtace

N50E

Abstract: PHP33N10E
Contextual Info: Philips S em iconductors Product specification P o w e r M O S transistor G E N E R A L DE SCRIPTION N -channel enhancem ent m ode field-effect pow er tra n sisto r in a plastic envelope featuring stable blocking voltage, fast sw itching and high therm al cycling perform ance

K7520

Abstract: K752
Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t speci f i cat i on T r e n c h M O S transistor Sta nd ard level FET G E N E R A L DE SCRIPTION N -channel enhancem ent m ode standard level tie ld -e tte ct pow er tran sistor in a plastic envelope using

d25V

Contextual Info: Phi l i ps S e m i c o n d u c t o r s P r o d u c t Speci f i cat i on P o w e r M O S transistor G E N E R A L DE SCRIPTION N -channel enhancem ent m ode fie ld -e ffe d pow er tran sistor in a plastic envelope. The device is intended for use in Sw itched M ode Pow er Supplies

w2a transistor

Abstract: transistor w2a 2SB1340 2SD1869 2SD1889 transistor 120v transistor w2a 40
Contextual Info: 2SB1340 2SD1889 Transistors I Power Transistor —120V, — 6A 2SB1340 •F e a t u r e s 1 ) Darlington connection for high DC current gain. 2 ) Bulll-ln resistor between base and em itter. 3 ) Built-In dam per diode. 4 ) Com plem ents the 2S D 1869. ^Absolute m axim um ratings ( T a = 2 5 'C )

BF470

Abstract: BF472 BF471 BF469
Contextual Info: Philips Semiconductors Product specification BF470; BF472 PNP high-voltage transistors FEATURES • Low feed back capacitance. APPLICATIONS • C lass-B video output stages in television receivers and for high-voltage IF output stages. DESCRIPTION PNP transistors in a TO -126; S O T32 plastic package.

BF459

Abstract: BF458 BF457
Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors BF457; BF458; BF459 DESCRIPTION NPN transistors in a TO -126; S O T32 plastic package. APPLICATIONS • Intended for video output stages in black-and-w hite and in co lou r television receivers.