D9D17 Search Results

NT512T64U88A0BY-37B

Abstract: NT512T64U88A0BY-5A NT1GT64U8HA0BY-37B NT512T64U88A0F PC2-3200 SSTL-18 4E543147543634553848413042592D35412020 NT512T64U88A
Contextual Info: NT512T64U88A0F / NT512T64U88A0B / NT512T64U88A0BY Green NT1GT64U8HA0F / NT1GT64U8HA0B / NT1GT64U8HA0BY (Green) 512MB: 64M x 64 / 1GB: 128M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx8 DDR2 SDRAM Features • JEDEC Standard 240-pin Dual In-Line Memory Module

DDR2-400

Abstract: DDR2-533 K4T56043QF K4T56083QF
Contextual Info: 256MB, 512MB, Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 256Mb F-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 256MB, 512MB, Registered DIMMs DDR2 Registered DIMM Ordering Information

NT1GC72B89A0NF

Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
Contextual Info: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency

NT1GT64U8HA0BN

Abstract: NT1GT64U8HA0BN-3C DDR2-400 DDR2-533 DDR2-667 PC2-3200 PC2-5300 SSTL-18 NT1GT64U8HA0BN-37B
Contextual Info: NT1GT64U8HA0BN Green 1GB : 128M x 64 PC2-3200 / PC2-4200 / PC2-5300 Unbuffered DDR2 SO-DIMM 200 pin Unbuffered DDR2 SO-DIMM Based on 64Mx8 DDR2 SDRAM Features • 200-Pin Small Outline Dual In-Line Memory Module (SO-DIMM) • 128Mx64 Unbuffered DDR2 SO-DIMM based on 64Mx8 DDR2

dm 533

Abstract: K4T5108 M393T5750BS0-CD5 DDR2-533
Contextual Info: 512MB, 1GB, 2GB Registered DIMMs DDR2 SDRAM DDR2 Registered SDRAM MODULE 240pin Registered Module based on 512Mb B-die 72-bit ECC Revision 1.0 January 2004 Rev. 1.0 Jan. 2004 DDR2 SDRAM 512MB, 1GB, 2GB Registered DIMMs DDR2 Registered DIMM Ordering Information

Contextual Info: IB M 1 1 M 1 6 7 3 5 B IB M 1 1 M 1 6 7 3 5 C 16M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • 16Mx72 Extended Data Out EDO Mode DIMMs • System Performance Benefits: - Buffered inputs (except RAS, Data)

IDT7203

Abstract: IDT7204 IDT7205 IDT7206 IDT7207 IDT7208 IDT720X 7208
Contextual Info: IDT7203 IDT7204 IDT7205 IDT7206 IDT7207 IDT7208 CMOS ASYNCHRONOUS FIFO 2,048 x 9, 4,096 x 9 8,192 x 9, 16,384 x 9 32,768 x 9, 65,536 x 9 FEATURES: • • • • • • • • • • • • • • • • • • First-In/First-Out Dual-Port memory 2,048 x 9 organization IDT7203

Contextual Info: Product Specifications PART NO.: VL41D1G63B-K0/K9/F8S REV: 1.0 General Information 8GB 1Gx72 DDR3 SDRAM LOW VOLTAGE ECC UNBUFFERED SO-UDIMM 204-PIN Description The VL41D1G63B is a 1Gx72 DDR3 SDRAM high density SO-UDIMM. This dual rank memory module consists of

Contextual Info: Product Specifications PART NO.: VL393T5263A-F7M REV: 1.0 General Information 4GB 512Mx72 DDR2 SDRAM ECC REGISTERED DIMM 240-PIN Description The VL393T5263A is a 512Mx72 DDR2 SDRAM high density DIMM. This dual rank memory module consists of eighteen CMOS 256Mx8 bits with 8 banks DDR2 synchronous DRAMs in BGA packages, two 25-bit registered buffer

Contextual Info: Product Specifications PART NO.: VL43B1G63A-K0/K9/F8/E7S REV: 1.1 General Information 8GB 1Gx72 DDR3 SDRAM ECC REGISTERED SO-RDIMM 204-PIN Description The VL43B1G63A is a 1Gx72 DDR3 SDRAM high density RDIMM. This dual rank memory module consists of eighteen CMOS 512Mx8 bits with 8 banks DDR3 Synchronous DRAMs in BGA packages, a 28-bit registered

MH64D72KLH-10

Abstract: MH64D72KLH-75
Contextual Info: Preliminary Spec. MITSUBISHI LSIs Some contents are subject to change without notice. MH64D72KLH-75,-10 4,831,838,208-BIT 67,108,864-WORD BY 72-BIT Double Data Rate Synchronous DRAM Module DESCRIPTION The MH64D72KLH is 67108864 - word x 72-bit Double Data Rate(DDR) Sy nchronous DRAM mounted module.

DDR200

Abstract: DDR266B HYMD132G7258-H HYMD132G7258-L
Contextual Info: HYMD132G7258-H/L 32Mx72 Registered DDR SDRAM DIMM PRELIMINARY DESCRIPTION Hynix HYMD132G7258-H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules DIMMs which are organized as 32Mx72 high-speed memory arrays. Hynix HYMD132G7258-H/L series consists of eighteen 16Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix

Contextual Info: UG532T7548JG-PL Data sheets can be downloaded at www.unigen.com SYNCHRONOUS DRAM MODULE 256M Bytes 32M x 72 bits PC133-COMPATIBLE SDRAM REGISTER & PLL DIMM based on 18 pcs 16M x 8 SDRAM with LVTTL, 4 banks & 4K Refresh FEATURES • • • • • • •

Contextual Info: UG64T7200K8DR Data sheets can be downloaded at www.unigen.com Solutions For A Real Time World TM 512M Bytes 64M x 72 bits SYNCHRONOUS DRAM MODULE 240 Pin DDR2 SDRAM Register & PLL DIMM w/ECC based on 18 pcs 32M x 8 DDR2 SDRAM 8K Refresh FEATURES PIN ASSIGNMENT (Front View)

Contextual Info: UG564T7588KG-PL Data sheets can be downloaded at www.unigen.com SYNCHRONOUS DRAM MODULE 512M Bytes 64M x 72 bits PC133-COMPATIBLE SDRAM REGISTER & PLL DIMM based on 18 pcs 32M x 8 SDRAM with LVTTL, 4 banks & 8K Refresh FEATURES • • • • • • •

NT1GD64S8HB0G

Abstract: 99127 NT1GD64S8HB0G-5T PC2700 PC3200 NT512D64S88B0G-6K
Contextual Info: NT1GD64S8HB0G / NT512D64S88B0G / NT256D64SH4B0G NT1GD72S8PB0G / NT512D72S89B0G 1GB, 512MB, 256MB, 1GB ECC and 512MB(ECC) PC3200 and PC2700 Unbuffered DDR DIMM 184 pin Unbuffered DDR DIMM Based on DDR400/333 512M bit Die B device Features • 184 Dual In-Line Memory Module (DIMM)

NT512D64S8HAAG-7K

Abstract: NT512D64S8HB1G-5T DDR400B NT512D64S8HC0G-6K NT512D64S8HABG-6 NT512D64S8HC0G-5 512mb DDR400A ddr dimm pinout NT512D64S8HAAG NT512D64S8HB1G
Contextual Info: NT512D64S8HA0G / NT512D64S8HAAG / NT512D64S8HABG NT512D64S8HB0G / NT512D64S8HB1G / NT512D64S8HC0G 512MB : 64Mb x 64, 64Mb x 72 PC3200 / PC2700 / PC2100 / PC1600 Unbuffered DDR DIMM 184-pin Unbuffered DDR DIMM Based on DDR400/333/266/200 32Mbx8 and 64Mbx8 SDRAM

Contextual Info: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb4 SRAM 9Mb QDR SRAM MT54V512H18E 4-Word Burst FEATURES • 9Mb Density 512Kx18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE operation

Contextual Info: ADVANCE 512K x 18 2.5V VDD, HSTL, QDRb2 SRAM 9Mb QDR SRAM MT54V512H18A 2-Word Burst FEATURES 165-Pin FBGA • 9Mb Density 512K x 18 • Separate independent read and write data ports with concurrent transactions • 100% bus utilization DDR READ and WRITE

Contextual Info: V91F565U24QC 128M x 72 HIGH PERFORMANCE FULLY BUFFERED DIMM FBDIMM Features Description • The V91F565U24QC memory module is organized as 134,217,728 x 72 bits in a 240 pin fully buffered ECC memory module. The 128M x 72 memory module uses 18 ProMOS 64M x 8 DDR2 SDRAMs. The x72

Contextual Info: 64Mx72 bits Registered DDR SDRAM DIMM HYMD264G726A L 8-M/K/H/L DESCRIPTION Hynix HYMD264G726A(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMD264G726A(L)8-M/

Contextual Info: 128Mx72 bits Registered DDR SDRAM DIMM HYMD512G726A L 8-M/K/H/L DESCRIPTION Preliminary Hynix HYMD512G726A(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 128Mx72 high-speed memory arrays. Hynix HYMD512G726A(L)8M/K/H/L series consists of eighteen 64Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix HYMD512G726A(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition.

Contextual Info: 64Mx72 bits Registered DDR SDRAM DIMM HYMD264G726B L 8-M/K/H/L DESCRIPTION Hynix HYMD264G726B(L)8-M/K/H/L series is registered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules (DIMMs) which are organized as 64Mx72 high-speed memory arrays. Hynix HYMD264G726B(L)8M/K/H/L series consists of eighteen 32Mx8 DDR SDRAM in 400mil TSOP II packages on a 184pin glass-epoxy substrate. Hynix HYMD264G726B(L)8-M/K/H/L series provide a high performance 8-byte interface in 5.25" width form factor of industry standard. It is suitable for easy interchange and addition.

ta 7282

Abstract: BI 7284 XOA transistor 7284 IDT7280 IDT7280L IDT7281 IDT7282 IDT7283 IDT7284
Contextual Info: IDT7280 IDT7281 IDT7282 IDT7283 IDT7284 IDT7285 CMOS DUAL ASYNCHRONOUS FIFO DUAL 256 x 9, DUAL 512 x 9, DUAL 1,024 x 9, DUAL 2,048 x 9, DUAL 4,096 x 9, DUAL 8,192 x 9 FEATURES: DESCRIPTION: • • • • • • • The IDT7280/7281/7282/7283/7284/7285 are dual-FIFO memories that