BSZ520N15NS3
Abstract: marking 6B s4si 6B104 I6025 marking a6b
Text: Je]R BSZ520N15NS3 G TM "%&$!"# 3 Power-Transistor Product Summary Features Q AD:> :J65 7@B 54 54 4@? F6BC:@? Q 492 ? ? 6= ? @B> 2 = 6F6= V 9I )-( K R 9I"\[#$ZNd -* Z" I9 *) 6 Q H46= = 6? D82 D6 492 B86 HR 9I"\[# AB@5E4D ) ' Q& @G @? B6C:CD2 ? 46 R 9I"\[#
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BSZ520N15NS3
marking 6B
s4si
6B104
I6025
marking a6b
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BAT53
Abstract: BAT 43 Schottky Diodes VF 579 D81 marking MARKING D82 BA579C a3020 BA 30 C Thomson-CSF diodes BAR43C
Text: ^ schottky diodes diodes schottky th o m so n -csf Types N N BAT BAT BAR BAR BAR 17 53 18 42 43 N BAR 43 A Characteristics at 25 ° C Maxim um ratings @ Vr Vp C @ •F Vr m 'F |r V (mA) max (uA) (V) min max (V) 4 10 70 30 30 30 30 30 100 100 0,25 0,1 0,2
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1000MHz
120ps
100ps@
BAT53
BAT 43 Schottky Diodes
VF 579
D81 marking
MARKING D82
BA579C
a3020
BA 30 C
Thomson-CSF diodes
BAR43C
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rectifier three phase 100a
Abstract: 7272 ME500810 A three-phase bridge rectifier datasheet A three-phase diode bridge rectifier datasheet power circuit of three phase control rectifier 100a diode bridge powerex ME50
Text: ME500810 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Three-Phase Diode Bridge Modules 100 Amperes/800 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three-phase bridge application. The modules are isolated
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ME500810
Amperes/800
rectifier three phase 100a
7272
ME500810
A three-phase bridge rectifier datasheet
A three-phase diode bridge rectifier datasheet
power circuit of three phase control rectifier
100a diode bridge
powerex ME50
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Untitled
Abstract: No abstract text available
Text: mMÊBŒK Powerex, Inc., 200 H illis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ME500810 ThiBB-PtlSSB Diode Bridge Modules 100 Amperes/800 Volts Description: Powerex Three-Phase Diode Bridge Modules are designed for use in three-phase bridge applica
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ME500810
Amperes/800
ME500810
72T4b21
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BZW03
Abstract: D3639 bzwo3
Text: Tem ic Semiconductors SOD64 Zener- and Suppressor Diodes continued Electrical Characteristics rzj Q ht TKvz al mA V(CL)R 11 allRSM > Typ a id Q Max. 1 Part Number VZ ±r 10% V Z- and Suppressor Diodes PVmax = 6 W, P(BR)S = 1000 W, tp = 100 (xs, 10% BZW03/D6V8
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BZW03/D6V8
BZW03/D7V5
BZW03/D8V2
BZW03/D9V1
BZW03/D10
BZW03/D11
BZW03/D12
BZW03/D13
BZW03/D15
BZW03/D16
BZW03
D3639
bzwo3
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bzt03
Abstract: BZT03 27
Text: Tem ic S e m i c o n d u c t o r s SODS7 Zener- and Suppressor Diodes Electrical Characteristics VZ r Z ±10% Part Number - a V ly p ! and Tighter Toterance Available on Request Ir ’tttv Z a tlz BZT03/D6V2 6.2 6.8 ' V CL)R l) Q Max. I r at V r 2) k tm Clamping
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BZT03/D6V2
BZT03/D6V8
BZT03/D7V5
BZT03/D8V2
BZT03/D9V1
BZT03/D10
BZT03/D11
BZT03/D12
BZT03/D13
BZT03/D15
bzt03
BZT03 27
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dimmer kd22
Abstract: Transistor s41 LC75742E LC75742W SQFP64 KD15 electronic dimmer IC KD-28
Text: Ordering number : EN6142 CMOS IC LC75742E, 75742W 1/2 Duty VFD Driver with Key Input Function Overview Package Dimensions The LC75742E and LC75742W are 1/2 duty VFD drivers that can be used for electronic tuning frequency display and other applications under the control of a microcontroller. These products can directly drive VFDs with
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EN6142
LC75742E,
5742W
LC75742E
LC75742W
3151-QFP64E
LC75742E]
dimmer kd22
Transistor s41
SQFP64
KD15
electronic dimmer IC
KD-28
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN6142 CMOS IC LC75742E, 75742W 1/2 Duty VFD Driver with Key Input Function Overview Package Dimensions The LC75742E and LC75742W are 1/2 duty VFD drivers that can be used for electronic tuning frequency display and other applications under the control of a microcontroller. These products can directly drive VFDs with
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EN6142
LC75742E,
5742W
LC75742E
LC75742W
3151-QFP64E
LC75742E]
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER bSE D • i»fl5S452 OGlTllfl MIT ■ INR PD-2.047C bitemational S Rectifier 80SQ. SERIES SCHOTTKY RECTIFIER 8 Amp Major Ratings and Characteristics Description/Features Characteristics 80SQ. Units lF AV Rectangular waveform 8
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fl5S452
55to175
Tj-125â
554S2
Q17121
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diode D83 004
Abstract: D83 - 004
Text: Bulletin 12081/A International S R e c tifie r s d 30on/ r s e r ie s STANDARD RECOVERY DIODES Stud Version Features • W id e c u rre n t ra n g e ■ H ig h v o lta g e ra tin g s up to 3 2 0 0 V ■ H ig h s u rg e c u r re n t c a p a b ilitie s ■ S tu d c a th o d e a n d s tu d a n o d e v e rs io n
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12081/A
SD300N/R
12-Thermal
diode D83 004
D83 - 004
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Untitled
Abstract: No abstract text available
Text: PD-2.047C International S Rectifier s o s q . s e r i e s SCHOTTKY RECTIFIER 8 Amp Description/Features Major Ratings and Characteristics Characteristics 80SQ. Units ' f AV Rectan9ular waveform 8 A 35 to 45 V Irsm @tp-5(jssine 2400 A VF 0.44 V -55 to 175
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Tj-125
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Untitled
Abstract: No abstract text available
Text: • 46 55 4 5 2 DD12442 T24 ■ INR PD-2.047C INTERNATIONAL RECTIFIER International Rectifier sosq . s e r ie s SCHOTTKY RECTIFIER 8 Amp Description/Features Major Ratings and Characteristics The 80SQ axial leaded Schottky rectifier series has been optimized for low reverse leakage at high temperature. The
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DD12442
Q01244S
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TEM 1208-1
Abstract: No abstract text available
Text: Bulletin 12081/A International lëRlRectifier s d 3oon/ r s e r ie s STANDARD RECOVERY DIODES Stud Version 380A Features • W id e current range ■ High vo ltag e ratings up to 3 2 0 0 V ■ High surge current capab ilities ■ Stud catho de and stud an od e version
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12081/A
TEM 1208-1
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w4 DIODE
Abstract: No abstract text available
Text: SKM 600GA176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .R 2 QG P8 D8 .R 2 OGK P8 D8VW .03+ 2 QGP8A * 5(+ %41(/<-+( +=(0-?-(F Trench IGBT Modules SKM 600GA176D 4=+0 OHKK 7 BBK E .0 2 TK P8 UHK E TKK E Y QK 7 OK ¥+ .0 2 QG P8 BKK E .0 2 TK P8
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600GA176D
w4 DIODE
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Untitled
Abstract: No abstract text available
Text: KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H iQ h ~ B 6 tB Dual Darlington Transistor Module 200 Amperes/600 Volts Description: The Powerex High-Beta Dual Darlington Transistor Modules are high power devices designed for
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KD424520HB
Amperes/600
J4b21
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diode D83
Abstract: 50m01 U300 KD424520HB d82 diode darlington 40A
Text: fOMEREX KD424520HB Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 H i C f h mB O t B Dual Darlington Transistor Module 200 Amperes/600 Volts O U T L I N E DR A WI N G Description: The Powerex High-Beta Dual Darlington Transistor Modules are
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KD424520HB
Amperes/600
diode D83
50m01
U300
KD424520HB
d82 diode
darlington 40A
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2514-6002UB
Abstract: NSSW100 TPS6118x NSSW100CT HPA260A JP13 JP15 2514-6002UB header NSP nichia TP72
Text: User's Guide SLVU238 – February 2008 WLEDEVM-260 WLED Load Board The WLEDEVM-260 load board contains 8 white light emitting diode WLED banks/strings which contain either 10 or 12 WLEDs as selected by the odd numbered jumpers (JP1, JP3, etc.). The even numbered
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SLVU238
WLEDEVM-260
TP1-TP89)
14-pin
TPS6118xEVMs
2514-6002UB
NSSW100
TPS6118x
NSSW100CT
HPA260A
JP13
JP15
2514-6002UB header
NSP nichia
TP72
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Untitled
Abstract: No abstract text available
Text: SKM 100GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8TU .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 QMG E .0 2 RJ N8 SJ E QGJ E W MJ 7 QJ [+ .0 2 MG N8 QJJ E .0 2 RJ N8 HJ E QGJ
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100GB176D
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TRANSISTOR D123
Abstract: D84 TRANSISTOR TRANSISTOR D114 5951-4 dimmer controller ic D123 vfl display serial
Text: Ordering number : EN5951 CMOS IC LC75757E, 75757W 1/3 Duty VFD Driver with Key Input Function Overview Package Dimensions The LC75757E and LC75757W are 1/3 duty VFD drivers that can be used for electronic tuning frequency display and other applications under the control of a microcontroller. These products can directly drive VFDs with
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EN5951
LC75757E,
5757W
LC75757E
LC75757W
3151-QFP64E
LC75757E]
TRANSISTOR D123
D84 TRANSISTOR
TRANSISTOR D114
5951-4
dimmer controller ic
D123
vfl display serial
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EZ 532
Abstract: No abstract text available
Text: SKM 400GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .P 2 NG O8 D8 .P 2 RGJ O8 .03+ 2 NGO8A * 5(+ %41(/<-+( +=(0-?-(F RHJJ 7 STJ E .0 2 UJ O8 TRJ E BJJ E Y NJ 7 RJ ]+ .0 2 NG O8 SSJ E .0 2 UJ O8 TJJ E BJJ E .P 2 RGJ O8 NNJJ E .03+( 2 NG O8
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400GB176D
EZ 532
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BUV 89
Abstract: No abstract text available
Text: SKM 300GB066D Absolute Maximum Ratings Symbol Conditions IGBT 789, .R 2 JK L8 D8 .R 2 I]K L8 D8Y` .03+ 2 JKL8A * 5(+ %41(/<-+( +=(0-?-(F BOO 7 X^O E .0 2 _O L8 XOO E BOO E a JO 7 .R 2 IKO L8 B U+ .0 2 JK L8 XKO E .0 2 _O L8 JKO E BOO E I]BO E KOO E M NO PPP Q I]K
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300GB066D
BUV 89
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Untitled
Abstract: No abstract text available
Text: SKM 75GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .O 2 MG N8 D8 .O 2 QGJ N8 D8ST .03+ 2 MGN8A * 5(+ %41(/<-+( +=(0-?-(F SEMITRANS 2 Trench IGBT Modules QHJJ 7 RJ E .0 2 RJ N8 GG E QJJ E V MJ 7 QJ Z+ .0 2 MG N8 RJ E .0 2 RJ N8 GG E QJJ E
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75GB176D
11Typ.
12Typ.
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IC 4093 pin configuration
Abstract: BRY 56 B IC 4093 MARKING 30 5Y SO2894 4392 4392 a ic BCV27 BFR30 BFR31
Text: micropackaged devices m icroboitiers ^ général purpose and switching transistor selector guide THOMSON-CSF guide de sélection-transistors de com m utation et usage général Case TO'236 •c 0,5 . 0,8A 0,1 . 0,2A Type NPN PNP NPN PNP BCX 20 BCX 18 SO 2221
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O-236
IC 4093 pin configuration
BRY 56 B
IC 4093
MARKING 30 5Y
SO2894
4392
4392 a ic
BCV27
BFR30
BFR31
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O41 DIODE
Abstract: No abstract text available
Text: SKM 145GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .T 2 RG S8 D8 .T 2 VGJ S8 .03+ 2 RGS8A * 5(+ %41(/<-+( +=(0-?-(F VHJJ 7 VBJ E .03+( 2 WJ S8 VRJ E RJJ E Y RJ 7 VJ ]+ .03+( 2 RG S8 V_J E .03+( 2 WJ S8 VJJ E RJJ E .T 2 VGJ S8 V_JJ E .03+( 2 RG S8
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145GB176D
O41 DIODE
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