D6052 Search Results
D6052 Price and Stock
On-Shore Technology Inc ED605-2DSTERM BLK 2POS TOP ENTRY 10MM PCB |
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ED605-2DS | Bulk | 100 |
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Knowles Corporation MD6052USZ-1MIC COND ANLG UNI -42DB 0.236"D |
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MD6052USZ-1 | Bulk | 1,000 |
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Samtec Inc ZW-36-12-G-D-605-213CONN BRD STACK .100" 72POS |
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JRH ELECTRONICS ZW-36-12-G-D-605-213CONN BRD STACK .100" 72POS |
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Samtec Inc ZW-10-12-G-D-605-213CONN BRD STACK .100" 20POS |
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D6052 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications |
Original |
2SK2166-01R | |
Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) |
Original |
D-60528 | |
Contextual Info: 2SK2758-01L,S N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications |
Original |
2SK2758-01L | |
1mb60Contextual Info: m 1-Pack IGBT m m 1MBIS00NP-060 IGBT MODULE N series '8SÏ Outline Drawing • Features Square R B SO A • Low Saturation Voltage • Less Total Pow er Dissipation • Improved FW D Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current) |
OCR Scan |
600NP-060 D-60528 702708-Dallas, DDDM57G 1mb60 | |
mosfet 600v
Abstract: 2SK1941 2SK1941-01R
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Original |
2SK1941-01R mosfet 600v 2SK1941 2SK1941-01R | |
2SK2101-01MRContextual Info: 2SK2101-01MR N-channel MOS-FET FAP-IIA Series 800V > Features - 2,1Ω 6A 50W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
Original |
2SK2101-01MR 2SK2101-01MR | |
SCA3100-D04
Abstract: AEC-Q100 SCA2100 SCA800 SCA3100D04 micromechanical
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Original |
SCA3100-D04 SCA3100-D04 AEC-Q100 SCA2100 SCA800 SCA3100D04 micromechanical | |
Contextual Info: 1-Pack IGBT 1MBI600NP-060 IGBT MODULE N series '& Outline Drawing • Features Square RBSOA • Low Saturation Voltage • Less Total Pow er Dissipation • Im proved F W D Characteristic • Minim ized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times R ated Current) |
OCR Scan |
1MBI600NP-060 Temperature000 D-60528 702708-Dallas, | |
SCA3000
Abstract: SCA3000-D01 SCA3000-D02 SCA3000-E01 SCA3000-E02 SCA3000-E04 82573 ultrasonic motion detector sensor B41600 3-axis Accelerometer filter
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Original |
257300A SCA3000 SCA3000-D01 SCA3000-D02 SCA3000-E01 SCA3000-E02 SCA3000-E04 82573 ultrasonic motion detector sensor B41600 3-axis Accelerometer filter | |
PWB 04
Abstract: SCA3000 VTI Technologies
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Original |
258600A SCA3000 VTI29394B0 8257300A" PWB 04 VTI Technologies | |
Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) |
Original |
D-60528 702708-Dallas, | |
AA800Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current) |
Original |
D-60528 AA800 | |
2SK2757-01Contextual Info: 2SK2757-01 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,9Ω 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators |
Original |
2SK2757-01 2SK2757-01 | |
Contextual Info: IGBT MODULE N series n Features • • • • n Outline Drawing Including Brake Chopper Square RBSOA Low Saturation Voltage Overcurrent Limiting Function ( 4 ~ 5 Times Rated Current ) n Equivalent Circuit n Absolute Maximum Ratings ( Tc=25°C) Items |
Original |
D-60528 | |
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Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) |
Original |
D-60528 | |
2mb1300n-060
Abstract: 2MB1300 2MB1300N 300n0
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OCR Scan |
300N-060 D-60528 2mb1300n-060 2MB1300 2MB1300N 300n0 | |
Contextual Info: FU JI 2-Pack IGBT 600 V 75 A 2MBI75N-060 [lILMëüMlE IGBT MODULE N series Outline Drawing • Features • • • • • • Square RBSOA Low Saturation Voltage Less Total Power Dissipation Improved FWD Characteristic M inimized Internal Stray Inductance |
OCR Scan |
2MBI75N-060 D-60528 | |
2SK2020-01MRContextual Info: 2SK2020-01MR N-channel MOS-FET FAP-IIA Series 500V > Features - 3Ω 3,5A 30W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Avalanche Proof > Applications - Switching Regulators |
Original |
2SK2020-01MR 2SK2020-01MR | |
Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) |
Original |
PULSE100 D-60528 702708-Dallas, | |
Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (~3 Times Rated Current) |
Original |
D-60528 | |
Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) |
Original |
D-60528 | |
2SK2166-01RContextual Info: 2SK2166-01R N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,03Ω 40A 80W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications |
Original |
2SK2166-01R 2SK2166-01R | |
Contextual Info: n Outline Drawing IGBT MODULE N series n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) |
Original |
D-60528 733-1700Fax | |
2SK1941
Abstract: 2SK1941-01R
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Original |
2SK1941-01R 2SK1941 2SK1941-01R |