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D55342M07B10J0R Price and Stock

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Vishay Intertechnologies D55342M07B10J0RS2 SMD Chip Resistor, 10 Ohm, ? 5%, 250 mW, 1206 [3216 Metric], Thick Film, Military Reliability - Tape and Reel (Alt: D55342M07B10J0RS2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	D55342M07B10J0RS2	Reel		7 Weeks	500	1 - 10 - 100 - 1000 $0.77622 10000 $0.77622	Buy Now
Avnet Abacus	D55342M07B10J0RS2			10 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies D55342M07B10J0RWL RES THKFLM RCWP 1206 10 OHM 5% 300PPM 0.01% SLDC - Waffle Pack (Alt: D55342M07B10J0RWL)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	D55342M07B10J0RWL	Waffle Pack		8 Weeks	100	1 - 10 - 100 $3.36146 1000 $3.36146 10000 $3.36146	Buy Now
Vishay Intertechnologies D55342M07B10J0RTP Res Thick Film 1206 10 Ohm 5% 1/4W ?300ppm/?C 0.01% Molded SMD SMD T/R - Tape and Reel (Alt: D55342M07B10J0RTP)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	D55342M07B10J0RTP	Reel		7 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 $0.43494	Buy Now
Vishay Intertechnologies D55342M07B10J0RUL RES THKFLM RCWP 1206 10 OHM 5% 300PPM 0.01% SLDC - Tape and Reel (Alt: D55342M07B10J0RUL)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	D55342M07B10J0RUL	Reel		8 Weeks	300	1 - 10 - 100 - 1000 $1.48828 10000 $1.48828	Buy Now
Vishay Intertechnologies D55342M07B10J0RWB Res Thick Film 1206 10 Ohm 5% 1/4W ?300ppm/?C 0.01% Molded SMD SMD Tray - Waffle Pack (Alt: D55342M07B10J0RWB)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	D55342M07B10J0RWB	Waffle Pack		13 Weeks	100	1 - 10 - 100 $2.79694 1000 $2.79694 10000 $2.79694	Buy Now

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D55342M07B10J0R Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
13009 TRANSISTOR equivalent Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to	Original	PDF	MRFG35030R5/D MRFG35030R5 13009 TRANSISTOR equivalent D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
transistor d 13009 Abstract: 13009 TRANSISTOR equivalent 136.21 200B393KP50X CDR33BX104AKWS MRFG35030 MRFG35030R5 RO4350 Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in	Original	PDF	MRFG35030R5 transistor d 13009 13009 TRANSISTOR equivalent 136.21 200B393KP50X CDR33BX104AKWS MRFG35030 MRFG35030R5 RO4350
13009 TRANSISTOR equivalent Abstract: transistor d 13009 Text: MOTOROLA Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in	Original	PDF	MRFG35030R5/D MRFG35030R5 MRFG35030R5 MRFG35030R5/D 13009 TRANSISTOR equivalent transistor d 13009
13009 TRANSISTOR equivalent Abstract: MRFG35030 transistor d 13009 MRFG35030R5 Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in	Original	PDF	MRFG35030R5 13009 TRANSISTOR equivalent MRFG35030 transistor d 13009
MC13892 Abstract: FET GAAS marking a transistor z4 30 transistor d 13009 H 9832 C696 MARKING Z7 RF TRANSISTOR 2.5 GHZ s parameter mc13892 schematic MRFG35030 Text: Freescale Semiconductor Technical Data MRFG35030R5 Rev. 2, 3/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL base station applications with frequencies from 3400 to 3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in	Original	PDF	MRFG35030R5 MC13892 MC13892 FET GAAS marking a transistor z4 30 transistor d 13009 H 9832 C696 MARKING Z7 RF TRANSISTOR 2.5 GHZ s parameter mc13892 schematic MRFG35030