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Text: N y CMOS Bus Matching SyncFlFO 256 x 36, 512 x 36,1024 x 36 PRELIMINARY ¡[^ 3 6 2 3 IDT723643 Integrated Device Technology, Inc. NOTE: There is an errata notice on the last page and the corrections have not been incorporated into this document. FEATURES:
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IDT723643
IDT723623-256
IDT723633â
IDT723643â
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Text: N AI1ER PHILIPS/DISCRETE bTE bbS3S31 □D27flflb 2^0 » A IAPX BSV64 SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a TO-39 metal envelope primarily intended for use as a print hammer drive. It has good high current saturation characteristics. QUICK REFERENCE DATA
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bbS3S31
D27flflb
BSV64
0D27flT0
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Text: I N AMER PHILIPS/DISCRETE bbsa^ai □D276H7 S^0 b^E ]> APX BSR60 to 62 y v P-N-P DARLINGTON TRANSISTORS Silicon planar transistors in plastic TO-92 envelopes, intended for industrial applications e.g. print hammer, solenoid, relay and lamp driving. N-P-N complements are the BSR50, BSR51 and BSR52.
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D276H7
BSR60
BSR50,
BSR51
BSR52.
BSR60
BSR61
BSR62
D037A50
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Text: FUJITSU SEMICONDUCTOR DATA SHEET D S 0 5 -1 1 0 2 9 -1 E MEMORY 4 x 1 Mx16BI T SYNCHRONOUS DYNAMIC RAM M B 8 1 1 6 4 1 6 4 2 A -1 2 5 /-1 0 0 /-8 4 /-6 7 /-1 2 5 L /-1 0 0 L /-8 4 L /-6 7 L CMOS 4-Bank x 1,048,576-Word x 16 Bit Synchronous Dynamic Random Access Memory
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Mx16BI
576-Word
MB811641642A
16-bit
2A-125/-100/-84/-67/-125L/-100L/-84L/-67L
54-pin
FPT-54P-M02)
002iM
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