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TT Electronics Power and Hybrid / Semelab Limited D2219UK Mosfet, rf, n Channel, se,12V,2.5W,1Ghz, so8; Drain Source Voltage Vds:40V; Continuous Drain Current Id:2A; Power Dissipation:17.5W; Operating Frequency Min:1Mhz; Operating Frequency Max:1Ghz; No. Of Pins:8Pins; Channel Type:N Channel Rohs Compliant: Yes \|Tt Electronics/semelab D2219UK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	D2219UK	Bulk			1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Richardson RFPD	D2219UK				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
TT Electronics Power and Hybrid / Semelab Limited D2219UKT/R RF POWER TRANSISTOR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	D2219UKT/R				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

D2219UK Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
D2219UK		Semelab	Metal Gate RF Silicon FET		Original	PDF

D2219UK Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
d2219uk Abstract: No abstract text available Text: PR EL IM INA RY TetraFET D2219UK-P METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS • VERY LOW Crss	Original	PDF	D2219UK-P d2219uk
Untitled Abstract: No abstract text available Text: TetraFET D2219UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE PIN 1 – SOURCE	Original	PDF	D2219UK 24swg
Untitled Abstract: No abstract text available Text: TetraFET D2219UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE	Original	PDF	D2219UK -10mm 24swg
d2219uk Abstract: DSA00300037 Text: TetraFET D2219UK METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS	Original	PDF	D2219UK d2219uk DSA00300037
d2219uk Abstract: No abstract text available Text: TetraFET D2219UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2.5W – 12.5V – 1GHz SINGLE ENDED K FEATURES M L J E F • SIMPLIFIED AMPLIFIER DESIGN G SO8 PACKAGE	Original	PDF	D2219UK 24swg d2219uk
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	PDF	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Diode 400V 5A Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM	Original	PDF	2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
GNS430 Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon	Original	PDF	GNS530 GNS430 750mW break400 1-200MHz 1-500MHz 1-400MHz D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Untitled Abstract: No abstract text available Text: nil Vrr r = mi TetraFET D2219UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 .5 W - 1 2 .5 V - 1GHz SINGLE ENDED I D f C A I FEATURES • SIMPLIFIED AMPLIFIER DESIGN G • SUITABLE FOR BROAD BAND APPLICATIONS	OCR Scan	PDF	D2219UK S08PACKAGE
Untitled Abstract: No abstract text available Text: nil TetraFET itfi llll SEME D2219UK LAB METAL GATE RF SILICON FET MECHANICAL DATA C GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 2 .5 W - 12.5V - 1 GHz SINGLE ENDED B I JT\ X L. ► * FEATURES • SIMPLIFIED AMPLIFIER DESIGN * • SUITABLE FOR BROAD BAND APPLICATIONS	OCR Scan	PDF	D2219UK S08PACKAGE
D2030* equivalent Abstract: F0127 F-Q127 P0127 Text: Sem eiab is pleased to announce a new range o f surface-m ount RF^SOSFEFs in the F-0127 package to com plem ent its existing range in the fa m ilia r SO8 package, The F-Q127 package o ffe rs several benefits to users com pared w ith the SOB package: • Easter attachm ent to a PCB	OCR Scan	PDF	F-0127 F-Q127 D1011UK D1211UK D2019UK D2020UK D2219UK D2220UK D2221UK D1031UK D2030* equivalent F0127 P0127
D2219 Abstract: D2003UK Text: For further information, please call your Semelab agent or distributor or D D O D D ö S ' D f l ö D D B Q Ö D Ö Ö Ö Ü Ö D Ö D D O D D C i o oo oo o O O .O O - o O o g § eso o\o 00_ 00o 00_ oo\ N CM IO I— o \© 00 to en »IO•«NI M o 00 On en	OCR Scan	PDF	OT223 D2219 D2003UK