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    D2206 TRANSISTOR Search Results

    D2206 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D2206 TRANSISTOR Datasheets Context Search

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    D2206 transistor

    Abstract: d2206
    Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2206 O-92MOD D2206 transistor d2206

    D2206 transistor

    Abstract: d2206 2sd2206
    Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2206 D2206 transistor d2206 2sd2206

    D2206 transistor

    Abstract: D2206 2SD2206
    Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2206 D2206 transistor D2206 2SD2206

    D2206

    Abstract: D2206 transistor 2SD2206
    Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2206 D2206 D2206 transistor 2SD2206

    Untitled

    Abstract: No abstract text available
    Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2206

    D2206 transistor

    Abstract: D2206 2sd2206 D2206 a
    Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2206 D2206 transistor D2206 2sd2206 D2206 a

    D2206

    Abstract: D2206 transistor D2206 a 2SD2206 TO92-MOD
    Text: 2SD2206 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2206 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)


    Original     		PDF 2SD2206 D2206 D2206 transistor D2206 a 2SD2206 TO92-MOD