D2012 Search Results
D2012 Price and Stock
TDK Corporation MLD2012SR47TTD25FIXED IND 470NH 1.2A 120MOHM SMD |
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MLD2012SR47TTD25 | Cut Tape | 3,500 | 1 |
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MLD2012SR47TTD25 | 15 Weeks | 4,000 |
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Rochester Electronics LLC ND2012LSMALL SIGNAL FIELD-EFFECT TRANSI |
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ND2012L | Bulk | 2,858 | 497 |
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WeEn Semiconductor Co Ltd WNSC2D201200WQDIODE SIL CARB 1200V 20A TO2472 |
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WNSC2D201200WQ | Tube | 2,391 | 1 |
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WNSC2D201200WQ | Bulk | 584 | 1 |
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WNSC2D201200WQ | 37 Weeks | 600 |
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WNSC2D201200WQ | 37 Weeks | 600 |
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SMC Diode Solutions S4D20120DDIODE ARR SIC 1200V 10A TO-247AD |
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S4D20120D | Tube | 711 | 1 |
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S4D20120D | 1 |
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Panasonic Electronic Components AXF6D2012ACONN HDR 20POS SMD GOLD |
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AXF6D2012A | 453 | 1 |
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AXF6D2012A | Reel | 500 |
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AXF6D2012A |
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AXF6D2012A | 500 |
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D2012 Datasheets (6)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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D 20 12 | Gedore Torque | SOCKET 1/4"" 12 MM | Original | |||
D2012 | Unknown | Si NPN TRANSISTOR | Original | |||
D 20 1/2AF | Gedore Torque | SOCKET 1/4"" 1/2"" | Original | |||
D2012UK |
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Metal Gate RF Silicon FET | Original | |||
D2012UK |
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GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED | Original | |||
D2012UK | Unknown | Shortform Datasheet & Cross References Data | Short Form |
D2012 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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9507 marking
Abstract: D2012 transistor d2012
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203651B D2012 04A001 NM3017-CS02 9507 marking D2012 transistor d2012 | |
D2012Contextual Info: SAW Bandpass Filter 241904B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2 |
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241904B D2012 06A001 NM6002-CS01 D2012 | |
D2012
Abstract: 88621
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202174C D2012 05A001 NM5014-CS02 D2012 88621 | |
D2012
Abstract: transistor d2012 T D2012 transistor d2012 T D2012 D2012
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242002B D2012 08A001 NM8047-CS01 D2012 transistor d2012 T D2012 transistor d2012 T D2012 D2012 | |
25160
Abstract: D2012
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251601B D2012 04A001 NM3032-CS03 25160 D2012 | |
10840
Abstract: D2012
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252602B D2012 06A001 NM6019-CS01 10840 D2012 | |
NM4002-CS01
Abstract: D2012
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270802B D2012 04A001 NM4002-CS01 NM4002-CS01 D2012 | |
D2012
Abstract: 11515DB
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203629B D2012 04A001 203SWR NI2029-CS03 D2012 11515DB | |
D2012Contextual Info: SAW Bandpass Filter 253004B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
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253004B D2012 06A001 NM6028-CS01 D2012 | |
20PF
Abstract: D2012 252101
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252101B D2012 06A001 NM6018-CS01 20PF D2012 252101 | |
D2012Contextual Info: SAW Bandpass Filter 201096B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
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201096B D2012 04A001 NI0033-CS04 D2012 | |
09310
Abstract: 7686 D2012
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203608B D2012 04A001 DS4018-CS02 09310 7686 D2012 | |
D2012Contextual Info: SAW Bandpass Filter 253010B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated |
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253010B D2012 09A001 CENTER125. NM9023-CS01 D2012 | |
D2012
Abstract: 61M10
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203649B D2012 421-809G 04A001 NW4012-CS01 D2012 61M10 | |
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D2012
Abstract: 593790
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233004B D2012 08A001 NM8004-CS01 D2012 593790 | |
transistor d2012
Abstract: D2012
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242003B D2012 06A001 NM6015-CS01 transistor d2012 D2012 | |
D2012Contextual Info: SAW Bandpass Filter 221904B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated |
Original |
221904B D2012 07A001 NM7037-CS01 D2012 | |
D2012Contextual Info: SAW Bandpass Filter 250506B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2 |
Original |
250506B D2012 06A001 CENTER140. NW6001-CS01 D2012 | |
transistor D2012Contextual Info: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS |
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D2012UK 450mW transistor D2012 | |
transistor d2012
Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
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D2012 TRANSISTOR--D2012 transistor d2012 d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012 | |
D2012Contextual Info: D2012 YOUDA TRANSISTOR SI NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage |
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D2012 D2012 | |
D2012UKContextual Info: TetraFET D2012UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS |
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D2012UK D2012UK | |
D2012Contextual Info: SAW Bandpass Filter 201532B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration |
Original |
201532B D2012 04A001 201RT NM3009-CS02 D2012 | |
8930
Abstract: D2012
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203624B D2012 04A001 203SWR NI1016-CS02 8930 D2012 |