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    D201 Search Results

    D201 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD2017FN Toshiba Electronic Devices & Storage Corporation Intelligent power device (Low side switch) / VDD=6 V / 8ch / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD2015FN Toshiba Electronic Devices & Storage Corporation Intelligent power device (High side switch) / VDD=40 V / 8ch / SSOP30 Visit Toshiba Electronic Devices & Storage Corporation
    PFD2015-472MEB Coilcraft Inc General Purpose Inductor, 4.7uH, 20%, 2 Element, Ferrite-Core, SMD, CHIP, 0906 Visit Coilcraft Inc
    PFD2015-122MEC Coilcraft Inc General Purpose Inductor, 1.2uH, 20%, 2 Element, Ferrite-Core, SMD, CHIP, 0906 Visit Coilcraft Inc
    PFD2015-182MEB Coilcraft Inc General Purpose Inductor, 1.8uH, 20%, 2 Element, Ferrite-Core, SMD, CHIP, 0906 Visit Coilcraft Inc
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    D201 Price and Stock

    Vishay Vitramon VJ0805D201KXPAJ

    CAP CER 200PF 250V C0G/NP0 0805
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    DigiKey VJ0805D201KXPAJ Cut Tape 34,254 1
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    VJ0805D201KXPAJ Digi-Reel 34,254 1
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    VJ0805D201KXPAJ Reel 34,000 1,000
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    Walsin Technology Corporation WLBD2012HCU600TH

    FERRITE BEAD 60 OHM 0805 1LN
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    DigiKey WLBD2012HCU600TH Cut Tape 7,606 1
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    WLBD2012HCU600TH Digi-Reel 7,606 1
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    WLBD2012HCU600TH Reel 4,000 4,000
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    TME WLBD2012HCU600TH 4,000
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    Delta Electronics Inc SDED20161T-4R7MS

    FIXED IND 4.7UH 950MA 387MOHM SM
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    DigiKey SDED20161T-4R7MS Digi-Reel 4,939 1
    • 1 $0.21
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    SDED20161T-4R7MS Cut Tape 4,939 1
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    SDED20161T-4R7MS Reel 3,000 3,000
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    Ferroxcube International Holding BV EFD20-10-7-3F36

    FERRITE CORE EFD 3F36
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    DigiKey EFD20-10-7-3F36 Bulk 3,898 1
    • 1 $1.19
    • 10 $0.827
    • 100 $0.5552
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    Sanken Electric Co Ltd 2SD2016

    TRANS NPN DARL 200V 3A TO-220F
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    DigiKey 2SD2016 Bulk 692 1
    • 1 $2.3
    • 10 $1.477
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    CoreStaff Co Ltd 2SD2016 1,000
    • 1 $1.384
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    • 100 $0.571
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    2SD2016 338
    • 1 $1.384
    • 10 $1.104
    • 100 $0.571
    • 1000 $0.524
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    Find more D201 price and stock on Findchips.com

    D201 Datasheets (66)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D201 Unknown Single & Dual Output Miniature, 2W SIP DC/DC Converters Original PDF
    D 20 10 Gedore Torque SOCKET 1/4"" 10 MM Original PDF
    D2010 Pixim Pixim D2000 Video Imaging System for Advanced CCTV Cameras Original PDF
    D2010 Semelab METAL GATE RF SILICON FET Original PDF
    D2010 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    D2010 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF
    D2010UK Semelab Metal Gate RF Silicon FET Original PDF
    D2010UK Semelab GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W - 28V - 1GHz SINGLE ENDED Original PDF
    D 20 11 Gedore Torque SOCKET 1/4"" 11 MM Original PDF
    D2011 Semelab METAL GATE RF SILICON FET Original PDF
    D 20 11/32AF Gedore Torque SOCKET 1/4"" 11/32"" Original PDF
    D2011UK Semelab METAL GATE RF SILICON FET Original PDF
    D 20 12 Gedore Torque SOCKET 1/4"" 12 MM Original PDF
    D2012 Unknown Si NPN TRANSISTOR Original PDF
    D 20 1/2AF Gedore Torque SOCKET 1/4"" 1/2"" Original PDF
    D2012UK Semelab Metal Gate RF Silicon FET Original PDF
    D2012UK Semelab GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W - 28V - 1GHz SINGLE ENDED Original PDF
    D2012UK Unknown Shortform Datasheet & Cross References Data Short Form PDF
    D 20 13 Gedore Torque SOCKET 1/4"" 13 MM Original PDF
    D2013 Semelab METAL GATE RF SILICON FET Original PDF

    D201 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D2010

    Abstract: D2010UK
    Text: TetraFET D2010UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		D2010UK D2010 D2010UK PDF

    9507 marking

    Abstract: D2012 transistor d2012
    Text: SAW Bandpass Filter 203651B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203651B D2012 04A001 NM3017-CS02 9507 marking D2012 transistor d2012 PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 241904B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		241904B D2012 06A001 NM6002-CS01 D2012 PDF

    D2012

    Abstract: 88621
    Text: SAW Bandpass Filter 202174C 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1


    Original     		202174C D2012 05A001 NM5014-CS02 D2012 88621 PDF

    D2012

    Abstract: transistor d2012 T D2012 transistor d2012 T D2012 D2012
    Text: SAW Bandpass Filter 242002B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		242002B D2012 08A001 NM8047-CS01 D2012 transistor d2012 T D2012 transistor d2012 T D2012 D2012 PDF

    25160

    Abstract: D2012
    Text: SAW Bandpass Filter 251601B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		251601B D2012 04A001 NM3032-CS03 25160 D2012 PDF

    10840

    Abstract: D2012
    Text: SAW Bandpass Filter 252602B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		252602B D2012 06A001 NM6019-CS01 10840 D2012 PDF

    NM4002-CS01

    Abstract: D2012
    Text: SAW Bandpass Filter 270802B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		270802B D2012 04A001 NM4002-CS01 NM4002-CS01 D2012 PDF

    D2012

    Abstract: 11515DB
    Text: SAW Bandpass Filter 203629B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203629B D2012 04A001 203SWR NI2029-CS03 D2012 11515DB PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 253004B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -30℃ ~ 80℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		253004B D2012 06A001 NM6028-CS01 D2012 PDF

    20PF

    Abstract: D2012 252101
    Text: SAW Bandpass Filter 252101B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 Dimensions shown are nominal in millimeters


    Original     		252101B D2012 06A001 NM6018-CS01 20PF D2012 252101 PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 201096B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		201096B D2012 04A001 NI0033-CS04 D2012 PDF

    09310

    Abstract: 7686 D2012
    Text: SAW Bandpass Filter 203608B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		203608B D2012 04A001 DS4018-CS02 09310 7686 D2012 PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 253010B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated


    Original     		253010B D2012 09A001 CENTER125. NM9023-CS01 D2012 PDF

    98-0745

    Abstract: D2012 52562
    Text: SAW Bandpass Filter 261903B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD 5.5max 6.0max Package : D2012 Pin Configuration


    Original     		261903B D2012 05A001 261H2 NM5023-CS02 98-0745 D2012 52562 PDF

    D2012

    Abstract: 593790
    Text: SAW Bandpass Filter 233004B 1. Features IF bandpass filter High attenuation Single-ended operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Dimensions shown are nominal in millimeters


    Original     		233004B D2012 08A001 NM8004-CS01 D2012 593790 PDF

    transistor d2012

    Abstract: D2012
    Text: SAW Bandpass Filter 242003B 1. Features z IF Bandpass Filter z High Attenuation z Single-Ended Operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		242003B D2012 06A001 NM6015-CS01 transistor d2012 D2012 PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 221904B 1. Features IF Bandpass Filter High Attenuation Single-Ended Operation DIP Package Maximum Storage Temperature Range : -40℃ ~ 85℃ Electrostatics Sensitive Device ESD Package : D2012 7.6±0.2 Pin Configuration 1 Base : Fe(SPCC), Au plating over Ni plated


    Original     		221904B D2012 07A001 NM7037-CS01 D2012 PDF

    D2012

    Abstract: No abstract text available
    Text: SAW Bandpass Filter 250506B 1. Features z IF bandpass filter z High attenuation z Single-ended operation z DIP Package z Maximum Storage Temperature Range : -40℃ ~ 85℃ z Electrostatics Sensitive Device ESD Package : D2012 12.7±0.2 2.5±0.2 7.6±0.2


    Original     		250506B D2012 06A001 CENTER140. NW6001-CS01 D2012 PDF

    D2015

    Abstract: No abstract text available
    Text: TetraFET D2015UK METAL GATE RF SILICON FET MECHANICAL DATA O A B C K H I E J F L G 4 PLS N D M (2 PLS) PIN 1 SOURCE PIN 2 SOURCE PIN 3 GATE PIN 4 DRAIN PIN 5 SOURCE PIN 6 SOURCE mm 10.92 5.84 2.54 3.30 dia 9.14 3.05 2.01 1.04 18.42 24.77 2.74 9.14 4.19 0.13


    Original     		D2015UK 500MHz D2015 PDF

    transistor D2012

    Abstract: No abstract text available
    Text: TetraFET D2012UK.04 METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 450mW Average 28V – 1GHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS


    Original     		D2012UK 450mW transistor D2012 PDF

    transistor d2012

    Abstract: d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012
    Text: D2012 YOUDA TRANSISTOR Si NPN TRANSISTOR—D2012 PIN CONFIGURATIONS DESCRIPTION AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity PIN 1 2 3 ABSOLUTE MAXIMUM RATINGS Tamb=25℃ PARAMETER SYMBOL Collector-Base Voltage


    Original     		D2012 TRANSISTOR--D2012 transistor d2012 d2012 transistor TRANSISTOR-D2012 D2012 transistor equivalent d2012 PDF

    D2011UK

    Abstract: No abstract text available
    Text: TetraFET D2011UK METAL GATE RF SILICON FET MECHANICAL DATA E C D B 8 1 2 7 3 6 F A 5 4 Q O N M J K L GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 28V – 1GHz SINGLE ENDED I P H G FEATURES DBC1 Package PIN 1 Source PIN 5 Source PIN 2 Drain PIN 6 Gate


    Original     		D2011UK D2011UK PDF

    d2015l

    Abstract: No abstract text available
    Text: Part: D2015L Series: Teccor Silicon Rectifier Devices Technology:Rectifiers PARAMETERS Package Type Pkg Type Radial Leaded Mount Method Mount Through Hole RMS forward current I F RMS MAX (A) 15 Average Forward Current I F (av) MAX (A) 9.5000 Peak Reverse Current


    Original     		D2015L O-220 PDF