D2003UK Search Results

D2003UK

Contextual Info: TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL B H C G 2 3 1 D A E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: nil Vrr r = mi TetraFET D2003UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET “ 1 5W -28V-1GHZ PUSH-PULL _ < F ► FEATURES i i • SIMPLIFIED AMPLIFIER DESIGN r r • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: TetraFET nil iFFi INI SEME D2003UK LAB METAL GATE RF SILICON FET MECHANICAL DATA ► M \* -*| - - Á ~ " a 2 £ i ' . d I : 4 . . . GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET * - I I I 3 5W -28V -1G H Z PUSH-PULL '5 1! * I * FEATURES 1 to . H T A A"

a7x transistor

Abstract: D2003UK J-171
Contextual Info: TetraFET D2003UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

a7x transistor

Abstract: D2003UK
Contextual Info: TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

a7x transistor

Abstract: D2003UK
Contextual Info: TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL B H C G 2 3 1 D A E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

Contextual Info: D2003UK Transistors N-Channel UHF/Microwave MOSFET V BR DSS (V)65 V(BR)GSS (V)20.0 I(D) Max. (A)1.0 P(D) Max. (W)35 Maximum Operating Temp (øC)200õ I(DSS) Min. (A) I(DSS) Max. (A)1.0m @V(DS) (V) (Test Condition)28.0 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.18

Contextual Info: bOE D • 61 33 10 7 G D D G ^ m STfl ■ S M L B SEME LA B PLC '* T -3 \ *ZS SEMELAB D2003UK TetraFET METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5 W -28V -1G H Z PUSH-PULL MECHANICAL DATA D im ension s FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: TetraFET D2003UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

D2003UK

Contextual Info: TetraFET D2003UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 28V – 1GHz PUSH–PULL B H C G 2 3 1 A D E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS

BFM12

Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Contextual Info: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db

transistor 5cw

Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Contextual Info: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000

Diode 400V 5A

Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM

D2282

Contextual Info: RF Division Products are available in a range o f plastic and ceramic packages DA RF Division RF M O S F E T product selector Sem elab R F M O S F E T designs are based on four unique die types diffused by Sem efab, and include devices rated from 750mW to over 350YY,

D2219

Abstract: D2003UK
Contextual Info: For further information, please call your Semelab agent or distributor or D D O D D ö S ' D f l ö D D B Q Ö D Ö Ö Ö Ü Ö D Ö D D O D D C i o oo oo o O O .O O - o O o g § eso o\o 00_ 00o 00_ oo\ N CM IO I— o \© 00 to en »IO•«NI M o 00 On en