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D16S60C Abstract: Schottky diode d16s60c IDT16S60C JESD22 Text: IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT16S60C PG-TO220-2-2 D16S60C D16S60C Schottky diode d16s60c IDT16S60C JESD22
DI 708 ag Abstract: No abstract text available Text: IDT16S60C 2nd Generation thinQ! SiC Schottky Diode Features Product Summary V DC 600 V • Switching behavior benchmark Qc 38 nC • No reverse recovery/ No forward recovery I F @ T C < 140 °C 16 A I F @ T C < 100 °C 24 A • Revolutionary semiconductor material - Silicon Carbide	Original	PDF	IDT16S60C PG-TO220-2-2 20mA2) DI 708 ag
Untitled Abstract: No abstract text available Text: IDH16S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 38 nC IF 16 A • No temperature influence on the switching behavior	Original	PDF	IDH16S60C PG-TO220-2 D16S60C
D16S60C Abstract: PG-TO-220-2-2 Schottky diode d16s60c IDT16S60C JESD22 Text: IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT16S60C PG-TO220-2-2 D16S60C D16S60C PG-TO-220-2-2 Schottky diode d16s60c IDT16S60C JESD22
Schottky diode d16s60c Abstract: D16S60C Text: IDH16S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery VDC 600 V Qc 38 nC IF 16 A • No temperature influence on the switching behavior	Original	PDF	IDH16S60C IDH16S60C PG-TO220-2 D16S60C Schottky diode d16s60c
D16S60C Abstract: Schottky diode d16s60c IDH16S60C JESD22 Text: IDH16S60C 2ndGeneration thinQ!TM SiC Schottky Diode Product Summary Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDH16S60C PG-TO220-2 D16S60C D16S60C Schottky diode d16s60c IDH16S60C JESD22
Schottky diode d16s60c Abstract: D16S60C Text: IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode Features • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark Product Summary V DC 600 V Qc 38 nC IF 16 A • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior	Original	PDF	IDT16S60C PG-TO220-2-2 IDT16S60C PG-TO220-2-2 D16S60C Schottky diode d16s60c