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    D161 Search Results

    D161 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    G874D161202CEU Amphenol Communications Solutions Mini power, Vertical, Dual row, 4.2mm pitch, 16 positions , 100u\\ Tin, 3.50mm tail length, LCP, Natural , TRAY Visit Amphenol Communications Solutions
    G874D161202CPEU Amphenol Communications Solutions Mini power, Vertical, Dual row, 4.2mm pitch, 16 positions , 100u\\ Tin, 3.50mm tail length, LCP, Natural , REEL Visit Amphenol Communications Solutions
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    D161 Price and Stock

    onsemi KSD1616AGTA

    TRANS NPN 60V 1A TO-92-3
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    DigiKey KSD1616AGTA Cut Tape 17,797 1
    • 1 $0.56
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    KSD1616AGTA Ammo Pack 16,000 2,000
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    Rochester Electronics KSD1616AGTA 8,278 1
    • 1 $0.0978
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    • 1000 $0.0831
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    TME KSD1616AGTA 1
    • 1 $0.434
    • 10 $0.217
    • 100 $0.158
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    Avnet Silica KSD1616AGTA 11 Weeks 2,000
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    EBV Elektronik KSD1616AGTA 12 Weeks 2,000
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    Flip Electronics KSD1616AGTA 24,000
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    TAIYO YUDEN LSDND1616KKT1R5MM

    FIXED IND 1.5UH 1.33A 185MOHM SM
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    DigiKey LSDND1616KKT1R5MM Cut Tape 7,500 1
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    LSDND1616KKT1R5MM Digi-Reel 7,500 1
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    LSDND1616KKT1R5MM Reel 7,500 2,500
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    Mouser Electronics LSDND1616KKT1R5MM 2,494
    • 1 $0.36
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    Newark LSDND1616KKT1R5MM Cut Tape 5,000 1
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    Avnet Abacus LSDND1616KKT1R5MM 17 Weeks 2,500
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    Kyocera AVX Components KGQ32DCG2D161GT

    CAP CER 160PF 200V NP0 1210
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    DigiKey KGQ32DCG2D161GT Digi-Reel 1,933 1
    • 1 $0.73
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    KGQ32DCG2D161GT Cut Tape 1,933 1
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    Integrated Silicon Solution Inc IS43LD16160B-25BLI

    IC DRAM 256MBIT PAR 134TFBGA
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    DigiKey IS43LD16160B-25BLI Tray 171 1
    • 1 $4.51
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    Avnet Americas IS43LD16160B-25BLI Tray 12 Weeks 171
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    Avnet Silica IS43LD16160B-25BLI 14 Weeks 171
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    EBV Elektronik IS43LD16160B-25BLI 21 Weeks 171
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    Littelfuse Inc MD16110A-DKM2MM

    DIODE MODULE GP 1600V 110A A3
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    DigiKey MD16110A-DKM2MM Bulk 140 1
    • 1 $44.19
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    D161 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D16/12 USHA Rectifier diode. All purpose high power rectifier diodes, non-controllable rectifiers. Free-wheeling diodes. Vrrm = 1200V, Vrsm = 1300V. Original PDF
    D1612 Dynacolor Auto Sizing Controller Scan PDF
    D1612D Dynacolor Auto Sizing Controller Scan PDF
    D16157-000 TE Connectivity Raychem Cable Protection Cables, Wires - Management - Heat Shrink Tubing - HEATSHRINK 1/4" X 0.131" RED Original PDF
    D16/16 USHA Rectifier diode. All purpose high power rectifier diodes, non-controllable rectifiers. Free-wheeling diodes. Vrrm = 1600V, Vrsm = 1700V. Original PDF

    D161 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-2-326-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 280 A 270 300 A 220 330 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


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    IGDD6-2-326-D1616-E1F12-DH-FA 650Vdc, 400Vac, 10min Px308/308 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-1-426-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 180 A 180 200 A 140 220 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    IGDD6-1-426-D1616-E1N6-DL-FA 650Vdc, 400Vac, 10min PDF

    d1610

    Abstract: transistor d1610 RUR-D1610 RUR-D1615 RUR-D1620 fly wheel ta9226 RURD1615 RCA Solid State power devices
    Text: G E SOLID □1 STATE 3875081 G E SOLID STATE Ullra-Fasl-R ecovery Rectifiers »F|3fl7SDai D O I T L , ^ 3 “ oTe 17649 D T 0 3 ~ /7 _ 1 RUR-D1610, RUR-D1615, RUR-D1620 File Number 1383 Dual 16-A, High-Speed, High Efficiency


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    GD17bM1 RUR-D1610, RUR-D1615, RUR-D1620 RUR-D1615 RUR-D1620Â d1610 transistor d1610 RUR-D1610 fly wheel ta9226 RURD1615 RCA Solid State power devices PDF

    RUR-D1610

    Abstract: RUR-D1615 RUR-D1620 ta9226 RURD1615
    Text: G E S O L 3 I D 8 7 S 5 T 8 A 1 T □ E G E S O L I D S U llra -F a s l-R e c o v e ry R e c tifie rs T A T E 1 “ » F o T | e 3 f l 7 1 7 S 6 D 4 a i D 9 O D I T L 3 , ^ T 3 ~ / _ 1 RUR-D1610, RUR-D1615, RUR-D1620 File Number


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    GD17bM1 RUR-D1610, RUR-D1615, RUR-D1620 RUR-D1615 RUR-D1620Â 1CS-3BI50 RUR-D1610 ta9226 RURD1615 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-2-326-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 280 A 270 300 A 220 330 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    IGDD6-2-326-D1616-E1F12-DH-FA 650Vdc, 400Vac, 10min Px308/308 PDF

    D1612

    Abstract: phase controller trigger Dynacolor D16* Dynacolor
    Text: D 1612 Auto Sizing Controller D l612 X 1 X2 X3 I I — Customer Package Type D : 14pin DIP Display monitor auto sizing is now possible with D1612 Auto Sizing Controller. It is a great user convenience when the customer changes timing or graphics cards D1612 senses horizontal and vortical flyback and tho vidno information, and calculates front and back porches. This informa­


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    D1612 14pin 12-bit 12MHz D1612 phase controller trigger Dynacolor D16* Dynacolor PDF

    Untitled

    Abstract: No abstract text available
    Text: IGGD6-1-328-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 170 A 160 180 A 130 200 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    IGGD6-1-328-D1616-E1N6-DL-FA 650Vdc, 400Vac, 10min PDF

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-1-426-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 180 A 180 200 A 140 220 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    IGDD6-1-426-D1616-E1N6-DL-FA 650Vdc, 400Vac, 10min PDF

    b6u b6ci

    Abstract: No abstract text available
    Text: IGDD6-2-426-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 330 A 320 360 A 260 390 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    IGDD6-2-426-D1616-E1F12-DH-FA 650Vdc, 400Vac, 10min Px308/308 b6u b6ci PDF

    SKC4M7-40A1

    Abstract: No abstract text available
    Text: IGDD6-2-426-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 330 A 320 360 A 260 390 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    IGDD6-2-426-D1616-E1F12-DH-FA 650Vdc, 400Vac, 10min Px308/308 SKC4M7-40A1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-1-428-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 200 A 200 220 A 160 240 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    IGDD6-1-428-D1616-E1N6-DL-FA 650Vdc, 400Vac, 10min PDF

    Untitled

    Abstract: No abstract text available
    Text: Balun ] V ie w T y p e 6 [ D I M E N S I O N S ] U n it: m m < Top V iew > < Bottom & Side V iew > -3.2±0.2IN 4 O U T 1 /I 3 Pin No. n p v/m. wà. 1.6+ 0.2 0.68 0.46 _ r v 1 2 GND OUT2 0.25 0 .6 ± 0.05 N—►N1 0 .4 1 Part Nq EHF F D1615 EHF F D1617 EHF


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    FD1615 FD1617 FD1618 FD1621 FD1619 PDF

    23/IGDD6-2-428-D1616-E1F12-DH-FA

    Abstract: No abstract text available
    Text: IGDD6-2-428-D1616-E1F12-DH-FA Characteristics Symbol Conditions min. typ. max. Unit 360 A 360 390 A 290 430 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


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    IGDD6-2-428-D1616-E1F12-DH-FA 650Vdc, 400Vac, 10min 6-2-428-D1616-E1F12-DH-FA Px308/308 23/IGDD6-2-428-D1616-E1F12-DH-FA PDF

    D1615

    Abstract: No abstract text available
    Text: SILICON TRANSISTORS 2 S D 1 6 1 5 ,2 S D 1 6 1 5A NPN SILICON EPITAXIAL TRANSISTORS POWER M IN I MOLD DESCRIPTION 2S D1615, 161 5A are designed fo r audio freq uency pow er a m p lifie r and sw itching app lica tion, especially in H y b rid Integrated C ircuits.


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    2SD1615, 2SD1615A D1615, D1615 PDF

    Untitled

    Abstract: No abstract text available
    Text: IGDD6-1-326-D1616-E1N6-DL-FA Characteristics Symbol Conditions min. typ. max. Unit 150 A 150 160 A 120 180 A 1200 V Electrical Data Irms Tamb=40°C, 3kHz, 650Vdc, 400Vac, cos=0,85 no overload 110% overload, 60s every 10min 150% overload, 60s every 10min VCES


    Original
    IGDD6-1-326-D1616-E1N6-DL-FA 650Vdc, 400Vac, 10min PDF

    18f24k22

    Abstract: PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi
    Text: PIC18 L F2X/4XK22 Data Sheet 28/40/44-Pin, Low-Power, High-Performance Microcontrollers with nanoWatt XLP Technology  2010 Microchip Technology Inc. Preliminary DS41412B Note the following details of the code protection feature on Microchip devices: •


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    PIC18 F2X/4XK22 28/40/44-Pin, DS41412B DS41412B-page 18f24k22 PIC18f45k22 example C18 codes pic18F26K22 example C codes pic18F44K22 PIC18F45K22 PIC18f46k22 example C18 codes i2c pin diagram of PIC18f45k22 pin diagram of PIC18LF45k22 embedded microcontroller PIC18FXXK22 PIC18 example C18 codes spi PDF

    c3807

    Abstract: C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986
    Text: sa H yo ^ Qui c = V < S ö 1ect 1on Gu 1de S P A \ v \ ÇE0 i cx v m A )\ 1 1 0 2 0 1 5 1 8 5 0 K7 1 5 K2 0 7 4 K2 3 9 5 2 5 K1 5 7 8 K212 K3 1 5 K4 0 4 K4 2 7 K444 K2270 3 0 2 0 C4 4 3 3 5 7 0 0 8 0 0 A1765 C4 4 5 4 B8 0 8 D10 12 B12 9 6 D19 3 6 3 0 K3 0 4


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    K2270 A1765 A1497/C3860, A1503/C3864 A1509/C3899, A1511/C3901 A1572/ A1574/C4070 A1582/C4113, A1590/C4121 c3807 C3898 k443 d16810 K545 K1311 b1127 C4146 K2073 B986 PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SC3622, 3622A NPN SILICON EPITAXIAL TRANSISTOR FOR LOW–FREQUENCY POWER AMPLIFIERS AND SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • High hFE: hFE = 1000 to 3200 @VCE = 5.0 V, IC = 1.0 mA • Low VCE(sat): VCE(sat) = 0.07 V TYP. @IC/IB = 50 mA/5.0 mA


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    2SC3622, 2SC3622) 2SC3622A) 2SC3622 2SC3622A PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTORS 2SB1116, 1116A PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING FEATURES PACKAGE DRAWING UNIT: mm • Low VCE(sat) VCE(sat) = −0.20 V TYP. (IC = −1.0 A, IB = −50 mA) • High PT in small dimension with general-purpose


    Original
    2SB1116, 2SD1616 2SB1116 2SB1116A PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET COMPOUND TRANSISTOR AN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with AA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET DARLINGTON TRASISTOR 2SB1465 PNP SILICON EPITAXIAL TRANSISTOR DARLINGTON CONNECTION FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed


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    2SB1465 2SB1465 PDF

    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF