D1201UK
Abstract: No abstract text available
Text: TetraFET D1201UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G
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D1201UK
500MHz
D1201UK
500MHz
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D1201UK
Abstract: No abstract text available
Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H FEATURES J • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS
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D1201UK
500MHz
D1201UK
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Untitled
Abstract: No abstract text available
Text: TetraFET Illl itti IMI D1201UK SEME LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W - 12.5V -500M Hz SINGLE ENDED N typ * A |B ▼ y. D (2 pis) (2 pis) H FEATURES T I * A A M I • SIMPLIFIED AMPLIFIER DESIGN
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D1201UK
-500M
500MHz
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Untitled
Abstract: No abstract text available
Text: TetraFET D1201UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G
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D1201UK
500MHz
D1201UK
500MHz
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Untitled
Abstract: No abstract text available
Text: nil Vrr r = mi TetraFET D1201UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 0 W -1 2 .5 V -5 0 0 M H z SINGLE ENDED FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
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D1201UK
27x45°
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D1201UK
Abstract: uhf power transistor 50W
Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS
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D1201UK
500MHz
D1201UK
500MHz
uhf power transistor 50W
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D1201UK
Abstract: No abstract text available
Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS
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D1201UK
500MHz
D1201UK
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D1201UK
Abstract: No abstract text available
Text: PRODUCT: D1201UK.01 ISSUE: 1 PAGE 1 OF 3 TYPE: PACKAGES: DMOS RF RF_DP TETRAFET DESIGNATION ORIGINATED DATASHEET ENTERED PROOFED ISSUED BY DATE JOHN WALKER 5/02/99 ADRIAN BUCKLEY 5/02/99 MAIN FILENAME PATH & FILENAME: C:\APPROVED\DTASHEET\R_F\D1201UK.01.QXD
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D1201UK
F\D1201UK
500MHz
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Untitled
Abstract: No abstract text available
Text: bGE D • 0133107 0000^52 ööb ISMLB SEP1ELAB PLC SEMELAB D1201UK TetraFET METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 10W -12-5V-500M HZ SINGLE ENDED MECHANICAL DATA Diniensions FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS
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D1201UK
-12-5V-500M
27X45*
300/ts,
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D1201UK
Abstract: No abstract text available
Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS
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D1201UK
500MHz
D1201UK
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Untitled
Abstract: No abstract text available
Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C N ty p A B ! D ( 2 p ls ) F ( 2 p ls ) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS
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D1201UK
500MHz
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Untitled
Abstract: No abstract text available
Text: TetraFET D1201UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED C 2 N typ 1 B A 3 D (2 pls) F (2 pls) H J FEATURES • SIMPLIFIED AMPLIFIER DESIGN M E I K G • SUITABLE FOR BROAD BAND APPLICATIONS
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D1201UK
500MHz
D1201UK
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BFM12
Abstract: BFM33 BFM34 BFM21 BFM-12 BFM32 D1022UK D1053UK D1015UK
Text: R.F. Division Semelab Device Type Working Power Working b v dss *D Freq. W atts Voltage Volts Am ps Min. Gain 13db BFM12 4 28 70 5 200MHz BFM21 0.75 0.75 4 28 12 65 0,2 0.2 2.5GHz 2.5GHz 1 2GHz 11db 13db 1.6 2 1GHz 13db 1GHz 13db 1GHz 13db 0.8GHz 13db 16db
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BFM12
BFM21
BFM22
BFM23
BFM32
BFM33
BFM34
BFM35
D1001UK
D1002UK
BFM33
BFM34
BFM-12
BFM32
D1022UK
D1053UK
D1015UK
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transistor 5cw
Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000
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CDMA2000
2N6084
BLV102
CA5815CS
D1020UK
LF2810A
MRF175LV
MSC75652
PH1600-7
SD1466
transistor 5cw
transistor 5cw 61
sd1466
transistor 6cw
TRANSISTOR REPLACEMENT GUIDE
6CW transistor
MS3016
transistor selection guide
PH1516-2
STM1645-10
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GNS430
Abstract: D5014UK D1028UK d5017 D2089 D2207UK D1029UK d2253 d5030 D5003UK
Text: Images of Garmin's GNS530 and GNS430 courtesy of Garmin Ltd. Copyright 1998-2006: Garmin Ltd. or its subsidiaries. All rights reserved. Technical Excellence Quality and Experience in RF Technology Worldwide RF Sales Representatives Semelab RF MOSFETs are manufactured using a unique silicon
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GNS530
GNS430
750mW
break400
1-200MHz
1-500MHz
1-400MHz
D5014UK
D1028UK
d5017
D2089
D2207UK
D1029UK
d2253
d5030
D5003UK
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D2219
Abstract: D2003UK
Text: For further information, please call your Semelab agent or distributor or D D O D D ö S ' D f l ö D D B Q Ö D Ö Ö Ö Ü Ö D Ö D D O D D C i o oo oo o O O .O O - o O o g § eso o\o 00_ 00o 00_ oo\ N CM IO I— o \© 00 to en »IO•«NI M o 00 On en
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OT223
D2219
D2003UK
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DI026
Abstract: D2012UK 13D8
Text: Technical background to Silicon RF Power M O SFETs Semelab manufacture four different R F MOSFETdie: PF10,12,20 and 22: eral nominally identical die in parallel within a package. The die have to be carefully selected for a close match on threshold voltage to en
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I028U
D1201UK
D20I2UK
20I2U
D2012UK
DI026
13D8
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