064R
Abstract: D1027UK coaxial storm products
Text: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1027UK
175MHz
EXE18
064R
D1027UK
coaxial storm products
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D1027UK
Abstract: No abstract text available
Text: TetraFET D1027UK.01 METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 65W – 28V – 226MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J
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D1027UK
226MHz
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Untitled
Abstract: No abstract text available
Text: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1027UK
175MHz
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Untitled
Abstract: No abstract text available
Text: TetraFET D1027UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D1027UK
175MHz
EXE18
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Untitled
Abstract: No abstract text available
Text: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1027UK
175MHz
EXE18
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VG13
Abstract: Siemens 1736
Text: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1027UK
175MHz
EXE18
VG13
Siemens 1736
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EXE18 19/30 S1TW coaxial cable
Abstract: 064R D1027UK
Text: TetraFET D1027UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D1027UK
175MHz
13xial
EXE18
EXE18 19/30 S1TW coaxial cable
064R
D1027UK
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D1027UK
Abstract: storm COAXIAL CABLE
Text: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1027UK
175MHz
D1027UK
175MHz
EXE18
storm COAXIAL CABLE
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D1027UK
Abstract: No abstract text available
Text: TetraFET D1027UK.01 METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 65W – 28V – 226MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J
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D1027UK
226MHz
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D1027UK
Abstract: No abstract text available
Text: TetraFET D1027UK.02 METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 24V – 150MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J
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D1027UK
150MHz
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D1027UK
Abstract: No abstract text available
Text: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1027UK
175MHz
D1027UK
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D1027UK
Abstract: 064R
Text: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K
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D1027UK
175MHz
D1027UK
064R
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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voltage 10v vdss 150v Id 50A mos fet
Abstract: 2SK2482
Text: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SK2482 NチャネルパワーMOSFET スイッチング用 2SK2482はNチャネル縦型 パワー MOS FETで，スイッチング特性が優れており，各種スイッチング電源用途に最適
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2SK2482
2SK2482N
D10274JJ2V0DS00
D10274JJ2V0DS
MP-88)
M8E02
voltage 10v vdss 150v Id 50A mos fet
2SK2482
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Untitled
Abstract: No abstract text available
Text: 5 kV rms Signal Isolated High Speed CAN Transceiver with Bus Protection ADM3054 Data Sheet FEATURES GENERAL DESCRIPTION 5 kV rms signal isolated CAN transceiver 5 V or 3.3 V operation on VDD1 5 V operation on VDD2 VDD2SENSE to detect loss of power on VDD2
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ADM3054
ADM3054
D10274-0-9/13
com/ADM3054
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Untitled
Abstract: No abstract text available
Text: bDE D • Ô1331Ô? □DOORMfl 355 « S M L B SEMELAB PLC * -3l-"2.S SEM ELAB D1027UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 150W -28V -175M H z PUSH-PULL MECHANICAL DATA D im ension s FEATURES • SIMPLIFIED AMPLIFIER DESIGN
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D1027UK
-175M
100mA
300/is,
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Untitled
Abstract: No abstract text available
Text: mi TetraFET iFFi mi SEME D1027UK LAB METAL GATE RF SILICON FET MECHANICAL DATA G c ty p (2 pis) A A H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W -28V -175M H z PUSH-PULL i I : p D (2 p is ) I ▼ T 4 5 (4 p is ) FEATURES « _ T. A • SIMPLIFIED AMPLIFIER DESIGN
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D1027UK
-175M
38VGS
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Untitled
Abstract: No abstract text available
Text: Illl TetraFET E^E mi D1027UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 5 0 W - 28V -175 M H z PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS DR PIN 1 SOURCE COMMON
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D1027UK
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Untitled
Abstract: No abstract text available
Text: nil Vrr r = mi TetraFET D1027UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 5 0 W -2 8 V -1 7 5 M H z PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DR
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D1027UK
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Untitled
Abstract: No abstract text available
Text: nil Vrr r = mi TetraFET D1027UK.01 SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 6 5 W -2 8 V -2 2 6 M H z PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DR
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D1027UK
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ignition spark mj10012
Abstract: TRANSISTOR ba 751 USE OF TRANSISTOR ignition C3334 schematic ignition delco ic HIGH ENERGY IGNITION CIRCUIT MC3334 c3334 schematic diagram ignition stroke
Text: <8 > M O TO R O LA — M C3334 MCC3334 MCCF3334 """ High Energy Ignition C ircuit This device is designed to use the signal from a reluctor type ignition pickup to produce a well controlled output from a power Darlington output transistor. HIGH ENERGY IGNITION CIRCUIT
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C3334
MCC3334
MCCF3334
D10273fc,
MC3334
MCCF3334
ignition spark mj10012
TRANSISTOR ba 751
USE OF TRANSISTOR ignition
schematic ignition
delco ic
HIGH ENERGY IGNITION CIRCUIT
c3334 schematic diagram
ignition stroke
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D10271
Abstract: TO-220-AP
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N T he 2SK2479 is N -C hannel M O S Field E ffect T ra n s is to r d e PACKAGE D IM E N S IO N S in m illim e te rs sig n e d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .
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2SK2479
2SK2479
D10271
TO-220-AP
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Untitled
Abstract: No abstract text available
Text: CHAPTER 1 GENERAL The juPD784046 subseries comprises 78K/IV series products that incorporates 10-bit A/D converter. The 78K/IV series comprises 16-bit single-chip microcontrollers equipped with a high-performance CPU that has a function such as accessing a
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juPD784046
78K/IV
10-bit
16-bit
PD784046
64K-byte
2048-byte
10-bit
juPD784044
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MBH201
Abstract: philips capacitor part numbering system ic dmo 255 smd diode UJ 64 A MBH210 diode S1G D9 Music Generator IC SDIP42 TEA1069N TEA1081
Text: Philips Semiconductors Preliminary specification Versatile speech/dialler/ringer with music-on-hold TEA1069N FEATURES - pulse or DTMF mode selection Speech part - register recall earth and flash times Voltage regulator with adjustable static resistance Low DC line voltage; operates down to 1.6 V
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TEA1069N
D102fiDb
MBH201
philips capacitor part numbering system
ic dmo 255
smd diode UJ 64 A
MBH210
diode S1G D9
Music Generator IC
SDIP42
TEA1069N
TEA1081
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