D1027 Search Results

064R

Abstract: D1027UK coaxial storm products
Contextual Info: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Contextual Info: bDE D • Ô1331Ô? □DOORMfl 355 « S M L B SEMELAB PLC * -3l-"2.S SEM ELAB D1027UK NEW PRODUCT RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOSRFFET 150W -28V -175M H z PUSH-PULL MECHANICAL DATA D im ension s FEATURES • SIMPLIFIED AMPLIFIER DESIGN

D1027UK

Contextual Info: TetraFET D1027UK.01 METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 65W – 28V – 226MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J

Contextual Info: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Contextual Info: TetraFET D1027UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

VG13

Abstract: Siemens 1736
Contextual Info: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

EXE18 19/30 S1TW coaxial cable

Abstract: 064R D1027UK
Contextual Info: TetraFET D1027UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN

D1027UK

Abstract: storm COAXIAL CABLE
Contextual Info: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Contextual Info: mi TetraFET iFFi mi SEME D1027UK LAB METAL GATE RF SILICON FET MECHANICAL DATA G c ty p (2 pis) A A H GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W -28V -175M H z PUSH-PULL i I : p D (2 p is ) I ▼ T 4 5 (4 p is ) FEATURES « _ T. A • SIMPLIFIED AMPLIFIER DESIGN

Contextual Info: Illl TetraFET E^E mi D1027UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 5 0 W - 28V -175 M H z PUSH-PULL FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS DR PIN 1 SOURCE COMMON

Contextual Info: nil Vrr r = mi TetraFET D1027UK SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 1 5 0 W -2 8 V -1 7 5 M H z PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DR

Contextual Info: nil Vrr r = mi TetraFET D1027UK.01 SEM E LAB METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 6 5 W -2 8 V -2 2 6 M H z PUSH-PULL FEATURES • SIMPLIFIED AMPLIFIER DESIGN • SUITABLE FOR BROAD BAND APPLICATIONS DR

D1027UK

Contextual Info: TetraFET D1027UK.01 METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 65W – 28V – 226MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J

D1027UK

Contextual Info: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

D1027UK

Abstract: 064R
Contextual Info: TetraFET D1027UK METAL GATE RF SILICON FET MECHANICAL DATA B C 2 pls 2 G (typ) 3 1 H P (2 pls) A D 4 5 GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 150W – 28V – 175MHz PUSH–PULL E (4 pls) F I FEATURES • SIMPLIFIED AMPLIFIER DESIGN N O M J K

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

voltage 10v vdss 150v Id 50A mos fet

Abstract: 2SK2482
Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistors 2SK2482 NチャネルパワーMOSFET スイッチング用 2SK2482はNチャネル縦型 パワー MOS FETで，スイッチング特性が優れており，各種スイッチング電源用途に最適

2SK2482

Abstract: voltage 10v vdss 150v Id 50A mos fet
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

ignition spark mj10012

Abstract: TRANSISTOR ba 751 USE OF TRANSISTOR ignition C3334 schematic ignition delco ic HIGH ENERGY IGNITION CIRCUIT MC3334 c3334 schematic diagram ignition stroke
Contextual Info: <8 > M O TO R O LA — M C3334 MCC3334 MCCF3334 """ High Energy Ignition C ircuit This device is designed to use the signal from a reluctor type ignition pickup to produce a well controlled output from a power Darlington output transistor. HIGH ENERGY IGNITION CIRCUIT

D10271

Abstract: TO-220-AP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2479 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE D E S C R IP TIO N T he 2SK2479 is N -C hannel M O S Field E ffect T ra n s is to r d e ­ PACKAGE D IM E N S IO N S in m illim e te rs sig n e d fo r h ig h v o lta g e s w itc h in g a p p lic a tio n s .

Contextual Info: CHAPTER 1 GENERAL The juPD784046 subseries comprises 78K/IV series products that incorporates 10-bit A/D converter. The 78K/IV series comprises 16-bit single-chip microcontrollers equipped with a high-performance CPU that has a function such as accessing a

MBH201

Abstract: philips capacitor part numbering system ic dmo 255 smd diode UJ 64 A MBH210 diode S1G D9 Music Generator IC SDIP42 TEA1069N TEA1081
Contextual Info: Philips Semiconductors Preliminary specification Versatile speech/dialler/ringer with music-on-hold TEA1069N FEATURES - pulse or DTMF mode selection Speech part - register recall earth and flash times Voltage regulator with adjustable static resistance Low DC line voltage; operates down to 1.6 V

Contextual Info: 5 kV rms Signal Isolated High Speed CAN Transceiver with Bus Protection ADM3054 Data Sheet FEATURES GENERAL DESCRIPTION 5 kV rms signal isolated CAN transceiver 5 V or 3.3 V operation on VDD1 5 V operation on VDD2 VDD2SENSE to detect loss of power on VDD2