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LDS 4201 Abstract: No abstract text available Text: HARRI S 4bE MU SEMICONDUCTOR D • 43052^ D0D0177 ‘ì ■ T ^ - 2 > \ - 3 lS ~ HARRIS HM F-12 1 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • 8.5 dB Gain MSG with + 22 dBm Associated Output power at 18 GHz * Large Cross Section Ti/Pt/Au Gates	OCR Scan	D0D0177 LDS 4201	PDF

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LDS 4201

Abstract: No abstract text available
Text: HARRI S 4bE MU SEMICONDUCTOR D • 43052^ D0D0177 ‘ì ■ T ^ - 2 > \ - 3 lS ~ HARRIS HM F-12 1 0 0 Gain Optimized GaAs FET 2-20 GHz PRODUCT DATA Features • 8.5 dB Gain MSG with + 22 dBm Associated Output power at 18 GHz * Large Cross Section Ti/Pt/Au Gates

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D0D0177 LDS 4201

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