D0250 Search Results

Contextual Info: LT-3/94 electronics EVAR EXPONENTIAL VARACTOR SERIES for 1M220 - 1M250 1T220 - XT250 D022D - D0250 FREQUENCY-VOLTAGE LINEAR TUNING inc. - X " — 1— v. D024I 's \ N K323Í — In axial leaded glass DO-7, in the surface mount MSI Case 1M alumina substrate with epoxy encapsulation or in the surface mount MSI-123

DO-220

Abstract: D0236 Capacitance Varactor Diode DO220 1H250 1T246 1t234 1X220 D0234 D0250
Contextual Info: r LT-3/94 EVAR EXPONENTIAL VARACTOR for 1M220 - 1H250 1T220 - 1T250 DO220 - D0250 FREQUENCY-VOLTAGE LINEAR TUNING The MSI Series 220 EVAR exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide band tuning applications.

Contextual Info: O^OSD SERIES EVAR EXPONENTIAL VARACTOR 1M220 - 1M250 1T220 - 1T250 D0220 - D0250 fo r FREQUENCY-VOLTAGE LINEAR TUNING electronics^ Th e MSI Series 220 EV AR exponential varactor tuning diodeB feature a 7:1 mi ni mu m capa ci ta nc e tuni ng ratio from 0.5 to 10 volts for wi de

D0236

Abstract: FM modulators
Contextual Info: LT-3/94 EVAR EXPONENTIAL VARACTOR SERIES for 1H220 - 1M250 1T220 - 1T250 DO220 - D0250 FREQUENCYVOLTAGE LINEAR TUNING The MSI Series 220 EVAR exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volt for wide

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.720B REPETITIV E AVALANCHE AND d v /d t RATED IRHN7150 IRHN8150 HEXFET TRANSISTOR N -CH A N N EL M EGA RAD HARD 100 Volt, 0.0550, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAO HARD technology

Contextual Info: M0&ED@ED07&"09>4931D?B0 >4ECDBI0?>DB?<0 ICD5= M0*B9@<50&ED@ED M0$55D0%FFACC0<1CC00)5=93?>4E3D?B0AE9@=5>D M0 >D5B>1<09>@ED06EC50@B?D53D9?> M0 >D5B>1<09>@ED0B5F5BC50@?<1B9DI0@B?D53D9?> M0 >D5B>1<09>@ED09>7BEC803EBB5>D0<9=9D039B3E9D M0&F5B<?1401>40C8?BD039B3E9D0@B?D53D9?>

MN 2114 static ram

Abstract: E5074 E507-4
Contextual Info: MITSUBISHI LSIs M5M44258BP,J,L-7,-8,-10 STATIC COLUMN MODE 1 0 4 8 5 7 6 -B IT 2 6 2 1 4 4 -W O R D BY 4-BIT DYNAM IC RAM DESCRIPTION T h is is a fa m ily o f 2 6 2 1 4 4 -w o r d by 4 -b it d y n a m ic R A M s , PIN CONFIGURATION (TOP VIEW) fa b ric a te d w ith th e high p e rfo rm a n c e C M O S process, and

Contextual Info: MITSUBISHI LSIs M5M41002BP, J,L-7, -8, -10 STATIC COLUMN MODE 1048576-B IT 1048576-W 0R D BY 1-BIT DYNAMIC RAM DESCRIPTION This is a family o f 1048576-word by 1-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for large-capacity memory systems where high

7560B

Contextual Info: L0-9450 1>7500 >@ED L0#?G0@B?69<560 >4ECDBI0 D1>41B40?D@B9>D L0<?21<0)165DI075>3I0?=@<91>35 %60!0*%20%',%-21020D//+)#!2).-1 )F0)5B95C $54931< 1=9>7 *5CD020$51CEB5=5>D C0H0EN0EA0D?0F-07 $54931<0'?G5B0)E@@<95C )F051DEB5C01>405>569DC 51DEB5C

Contextual Info: HM62V8128 Series 131072-Word X Product Preview 8-Bit High Speed CMOS Static RAM D escription O rd e rin g In fo rm atio n The H itachi H M 62V 8128 is a CM OS static RAM organized 128 kw ord X 8 bit. It realizes h ig h e r d en sity , h ig h e r p erfo rm a n ce and low

Contextual Info: ASSP Single Serial Input PLL Frequency Synthesizer On-Chip 2.0GHz Prescaler _ MB15E05 • DESCRIPTION The Fujitsu M B15E05 is serial input Phase Locked Loop PLL frequency synthesizers with a 2.0 G H z prescaler. A 64/65 or a 128/129 can be selected for the prescaler that enables pulse swallow operation.

Contextual Info: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS Ta=25°C C h a ra c te ris tic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C

TC8831F

Abstract: IPCS01 G025124 tc8831 TC8831F-1 tc511000 marking F59 DIODE UT-47 voice recording chip RS2-V
Contextual Info: TGTTaM'ì 00250fciL» =3313 • T0S3 TOSHIBA U C / U P TC8831F-1 b4E » GENERAL T h e T C 8 8 3 1 F is a sin g le c h ip CM O S L S I fo r voice re c o rd in g / p lay -b ack u s in g th e A D M ( A d a p tiv e D e lta M o d u la tio n ), I t com poses a voice re c o rd in g sy ste m w ith a d y n a m ic R A M for voice m em o ry a n d

M5M44256BP

Abstract: SOJ-20 M5M44256B-8
Contextual Info: MITSUBISHI L SIs M 5 M 4 4 2 5 6 B P ,J ,L ,V P ,R V - 7 ,- 8 ,- 1 0 FAST PAGE MODE 1 0 4 8 5 7 6 -B IT 2 6 2 144-WORD BY 4-BIT DYNAMIC RAM D ES C R IP T IO N This is a family of 262144-word by 4-bit dynamic RAMs, fabricated with the high performance CMOS process, and

BFG540

Abstract: transistor N43
Contextual Info: Philips Semiconductors • bb53cl31 0D25011 253 « A P X Product specification N AMER PHILIPS/DISCRETE b7E D NPN 9 GHz wideband transistor £ BFG540; BFG540/X; BFG540/XR FEATURES PINNING PIN High power gain • Low noise figure • High transition frequency

Capacitance Varactor Diode

Abstract: MSI Electronics 1M250 D0224 1T25 1T220 D0234 D0246 1M220 1M224
Contextual Info: LT-3/94 D vD SD EVAR TM EXPONENTIAL VARACTOR SERIES for electronics FREQUENCY-VOLTAGE LINEAR TUNING 1M220 - 1M250 1T220 - XT250 D0220 - D025Q inc. 100 The MSI Series 220 EVAK exponential varactor tuning diodes feature a 7:1 minimum capacitance tuning ratio from 0.5 to 10 volts for wide

L7551

Abstract: 44-PIN L7581 L8551 T7504 BEL 187 application
Contextual Info: Data Sheet March 1997 microelectronics group Lucent Technologies Bell Labs Innovations L8551 Low-Power SLIC Features Description • Low active power typical 135 mW during on-hook transmission This electronic subscriber loop interface circuit (SLIC) is optimized for low power consumption in

Contextual Info: J A E ELECTRONICS INC bBC D • 4flc]34hS 000Q[]75~1 M ICROMINIATURE, DOUBLE DENSITY D TYPE RECTANGULAR CONNECTOR- D02 SERIES Dimensions are in inches Millimeters are in parentheses 63C 00075 489 346 5 J A E'ELECTRONICS INC D^y-7^5 STANDARD SHELL Af - s

Contextual Info: International IÖR Rectifier Data Sheet No. PD-6.074 IR2 1 1 0 L6 HIGH AND LOW SIDE DRIVER Features Product Summary • Floating channel designed for bootstrap operation Fully operational to +600V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range tram 10 to 20V

h9700

Abstract: opts h9700 IMO K30S K56E-ADA RS485-COMMUNICATION D0252 d0249 63a3 D0250 K60S
Contextual Info: User’s Manual l IMO Programmable Logic Controller ,02. 6 6HULHV IMO-K 30S IMO-K 60S Installation Environment  3OHDVH DYRLG LQVWDOOLQJ WKH 3/& DW IROORZLQJ ORFDWLRQV ZKHUH 4$PELHQW WHPSHUDWXUH H[FHHGV VSHFLILFDWLRQ ,W VKRXOG VWD\ ZLWKLQ C WR C F WR F

TAG 453 665 800

Abstract: tag 665 100 BFQ67 KMI 814 ha 431 transistor 2857 730 transistor RF NPN POWER TRANSISTOR C 10-12 GHZ philips 2322 662 9632 transistor ati 0943
Contextual Info: nu!1. 0 m b b s g ^ l DDESObb 3bD • APX „Product specification . , „ Philips Sem iconductors N AMER PHILIPS/DISCRETE b?E D NPN 8 GHz wideband transistor FEATURES BFQ67 PINNING • High power gain PIN • Low noise figure 1 • High transition frequency

SJ013596

Abstract: SJ017233 marked YC SJ01
Contextual Info: SYM. 3-505 I£0 ns NO. DATE D ES C R IPTIO N DRAWN CHECKED A PP * D APP' D ‘0MQ ± 0. 5 CONTACT N O T E 1. MARKS 'JA E ' ' - FO' IS NO. & NOT 2. FOR CONTACT 3. FOR PANEL 4. CONTACT PART MARKED ARE ON BE SEE DIMENSIONS ORDERED SHOWN ON THIS PORTION. CONNECTOR.