D017T55 Search Results
D017T55 Datasheets Context Search
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Contextual Info: á P * S M F -0 3 1 0 0 B ELECTRONICS Sam sung M icrow ave Sem ico nd ucto r G e lili O p tÍV H ÍZ G C l G aAs FET 2-20 GHz Description Features The SMF-03100 is a 300 |im n-channel MESFET with 0.5 nm gate length, utilizing Samsung Microwave’s gain optimized G10 process. Ti/Pt/Au gate metallization and |
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SMF-03100 D017T55 |