D F 331 TRANSISTOR Search Results

D F 331 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini

D F 331 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
C67078-S3114-A2 Abstract: No abstract text available Text: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current	Original	O-218 C67078-S3114-A2 C67078-S3114-A2	PDF
12S10 Abstract: C67078-S3114-A2 331 transistor Text: BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code BUZ 331 500 V 8A 0.8 Ω TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current	Original	O-218 C67078-S3114-A2 12S10 C67078-S3114-A2 331 transistor	PDF
XC6901D Abstract: XC6901 p-channel mosfet with diode sot89-5 ta1527 marking 005c Text: XC6901 Series ETR0343-005c 200mA Negative Voltage Regulator with ON/OFF Control •GENERAL DESCRIPTION The XC6901 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator.	Original	XC6901 ETR0343-005c 200mA XC6901D p-channel mosfet with diode sot89-5 ta1527 marking 005c	PDF
XC6902N Abstract: XC6902 C01 SOT23 ta1323 Text: XC6902 Series ETR0363-002a -16V Input Three Terminal Negative Voltage Regulator •GENERAL DESCRIPTION The XC6902 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifiers, driver transistors, current limiters and phase compensators.	Original	XC6902 ETR0363-002a 200mA XC6902N C01 SOT23 ta1323	PDF
XC6901D331MR-G Abstract: XC6901D301MR-G XC6901D501MR-G XC6901D XC6901D251ER-G XC6901D301ER-G ta1628 XC6901D251MR-G XC6901 03VVOUT2 Text: XC6901 Series ETR03043-006 200mA Negative Voltage Regulator with ON/OFF Control •GENERAL DESCRIPTION The XC6901 Series is a negative voltage CMOS regulator which includes a reference voltage source, error amplifier, driver transistor, current limiter and phase compensator.	Original	XC6901 200mA ETR03043-006 XC6901D331MR-G XC6901D301MR-G XC6901D501MR-G XC6901D XC6901D251ER-G XC6901D301ER-G ta1628 XC6901D251MR-G 03VVOUT2	PDF
d331 npn transistor Abstract: D331 PNP D331 transistor SICK WS 150 D132 transistor D331 datasheet D330 NPN transistor SICK WT 4-2 transistor d331 sick WL sick WL 10 Text: D A T E N B L A T T Lichtschranken Baureihe W 4-2 WS/WE 4-2 4m WL 4-2 2,8 m WT 4-2 4 . 130 mm Komplette Lichtschrankenbaureihe in glasfaserverstärktem Kunststoffgehäuse. Einweglichtschranke mit 4 m Reichweite und sichtbarem Rotlicht als Ausrichthilfe.	Original	D-40549 CH-6370 d331 npn transistor D331 PNP D331 transistor SICK WS 150 D132 transistor D331 datasheet D330 NPN transistor SICK WT 4-2 transistor d331 sick WL sick WL 10	PDF
AFT21S230SR3 Abstract: C5750X7S2A106M NI-780S-6 NI-780 542w Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 1, 11/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	AFT21S230S AFT21S230SR3 AFT21S232SR3 C5750X7S2A106M NI-780S-6 NI-780 542w	PDF
phototransistor 650 nm Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features	Original	Q62702-P1634 OHF01924 GPL06924 phototransistor 650 nm Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 1, 11/2012 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	AFT21S230S AFT21S230SR3 AFT21S232SR3	PDF
AFT21S230S Abstract: aft21s232s C5750X7S2A106M Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 2, 3/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 watt RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	AFT21S230S AFT21S230SR3 AFT21S232SR3 aft21s232s C5750X7S2A106M	PDF
transistor h 331 Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features	Original	331-JK Q62702-P1634 GPLY6924 transistor h 331 c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm	PDF
S321RDB Abstract: s 316 hwb S321HWB S315GWA 7 segment cc S511GWA infra red 11 pin 7 segment LED pin configuration s322 10NOPIN Text: EVERLIGHT ELECTRONICS • BM D 3 M 15703 I ■ INFRA RED/SUPER-INFRARED LEDS J / - ^ j 00G D 002 3 ■ EVEC LED INDICATOR LAMPS 1 SILICON PIN PHOTODIODES PHOTO TRANSISTORS \| 50 30 G IB f Jjîl jjfty “ ■ fl t 3 PT 331 C PT 202 C 7 - SEGMENT DIGIT DISPLAYS	OCR Scan	3M15703 S315GWA S321RDB s 316 hwb S321HWB S315GWA 7 segment cc S511GWA infra red 11 pin 7 segment LED pin configuration s322 10NOPIN	PDF
mosfet J 3305 Abstract: 221A-06 72SM AN569 MTP7P06 TMOS Power FET Text: MOTOROLA SC XSTRS/R F bf i E D • b3t.72SM QDTflbTT 331 ■ HOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA MTP7P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 7 AMPERES This TMOS Power FET is designed for medium voltage,	OCR Scan	MTP7P06 b3b7254 0CHfl703 mosfet J 3305 221A-06 72SM AN569 MTP7P06 TMOS Power FET	PDF
DF 331 TRANSISTOR Abstract: transistor df 331 Text: SIEMENS BUZ 331 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type l/bs b f l DS on Package Ordering Code BUZ 331 500 V 8A 0.8 n TO-218 AA C67078-S3114-A2 Maxim um Ratings Parameter Symbol Continuous drain current b Values	OCR Scan	O-218 C67078-S3114-A2 fi23SbD5 Gfl47b7 0Dfi47bÃ DF 331 TRANSISTOR transistor df 331	PDF

transistor B A O 331 Abstract: D F 331 TRANSISTOR Text: SIEMENS BUZ 331 SIPMOS Power Transistor Type BUZ 331 CO i • N channel • Enhancement mode • Avalanche rated 500 V Id Tc ^DS on Package 1> Ordering Code 8.0 A 35 ’C 0.8 Q TO-218 AA C67078-S3114-A2 Maximum Ratings Parameter Symbol Continuous drain current	OCR Scan	O-218 C67078-S3114-A2 SILO3821 transistor B A O 331 D F 331 TRANSISTOR	PDF
C 331 Transistor Abstract: transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331 Text: LINEAR INTEGRATED CIRCUIT TBA 331 GENERAL PURPOSE The TBA 331 is an assembly of 5 silicon NPN transistors on a common monolithic substrate In a Jedec TO-116 14-lead dual in-line plastic package. Two transistors are internally connected to form a differential amplifier.	OCR Scan	O-116 14-lead C 331 Transistor transistor 331 331 transistor transistor C 331 y 331 Transistor transistor 331 8 of ic 331 transistor 331 p g060 NPN/transistor C 331	PDF
IRF3303 Abstract: OA 161 diode IRFF330 IRFF331 IRFF332 IRFF333 Text: - Standard Power MOSFETs File Number IRFF330, IRFF331, IRFF332, IRFF333 1893 N-Channel Enhancement-Mode Power Field-Effect Transistors 3.0A and 3.5A, 350V - 400V rD S o n = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: •	OCR Scan	IRFF330, IRFF331, IRFF332, IRFF333 IRFF332 IRFF333 IFF33 IRF3303 OA 161 diode IRFF330 IRFF331	PDF
lt 332 diode Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750 Text: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR\|DSS IRFF330 400 1.0 3.5 IRFF331 350	OCR Scan	IRFF330/331/332/333 IRFF330 IRFF331 IRFF332 IRFF333 O-205AF lt 332 diode 4242 DM 4243 dm diode 331 t2235 QA-750	PDF
p331 Abstract: SGSP130 Text: S G S-THOMSON 07E D \| 7 ^ 2 3 7 0Dl7fl07 b \| _ 73C 1 7 3 0 4 _ O j T Z J - O y _ _ ê f. V ñ K W% i I 1 • SGSP13Ò/P13Ì/P132 ;] SGSP230/P231/P232 .4 SGSP330/P331/P332 - 1 N-CHÀNNEL POWER MOS TRANSISTORS & HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate	OCR Scan	0Dl7fl07 SGSP13Ã /P132 SGSP230/P231/P232 SGSP330/P331/P332 OT-82 O-220 SGSP130 SGSP230 SGSP330 p331 SGSP130	PDF
DF 331 TRANSISTOR Abstract: transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR Text: SOLITRON DEVICES INC ELEMENT NUMBER Üb DF\|ü3höbD2 0D02ST3 D ~ M ED IU M VOLTAGE NPN SINGLE DIFFUSED MESA TRANSISTOR F O R M E R L Y 31 C O N T A C T M E T A L L IZ A T IO N Case, Emitter and Collector: So ld e r Coated 9 5 / 5 % lead/tin. A S S E M B L Y R E C O M M E N D A T IO N S	OCR Scan	0D02ST3 DF 331 TRANSISTOR transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR	PDF
IRF331 Abstract: field effect transistor IRF 900 volts irf330 transistor d 331 data Irf333 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF330 IRF331 IRF333 Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid	OCR Scan	IRF330 IRF331 IRF333 O-204) IRF331. field effect transistor IRF 900 volts transistor d 331 data Irf333	PDF
transistor 331 p Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TPM401 The RF Line UHF Power Transistor . . . desig ned a s an N P N gold m etallized tran sisto r using d iffused em itter b allast resisto rs for op eration in C la s s A , B or C co n dition s. Th e high g ain red uces the need for co m p lex broadband circ u its and is id ea lly suited	OCR Scan	TPM401 transistor 331 p	PDF
2N3773 equivalent Abstract: transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent Text: 8368602 SOL ITRON DEVICES re » ? ©atm,®® INC T5 95D DE \| f l 3 h a t . 0 E • 02903 00 0 5 ^ 0 3 D □ ^Sww&rßik T~ I — " Devices, Ine MEDIUM VOLTAGE CHIP N U M BER IMPIM SIN G LE DIFFUSED M ESA TRANSISTOR FORMERLY 31 CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.	OCR Scan	JAN2N3771, JAN2N3772, 2N3773. 2N4347, 2N4348, 2N6262 C-112 2N3773 equivalent transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent	PDF
MA4T64400 Abstract: low noise transistors MA4T645 MA4T644 Text: Silicon Low Noise Transistors Silicon Bipolar High fT Low IVoise Microwave Transistors M A4T64400 Series Features MA4T64435 - fT to 11 G H z Micro-X L o w N o ise F igu re at Low B ias V o lta g e H igh A sso cia te d G ain • H e rm e tic and S u rfa c e M o u n t	OCR Scan	A4T64400 MA4T64435 MA4T64433 OT-23 MA4T64539 OT-143 4T644X OT-143) MA4T64400 low noise transistors MA4T645 MA4T644	PDF

D F 331 TRANSISTOR Search Results

D F 331 TRANSISTOR Result Highlights (5)

D F 331 TRANSISTOR Datasheets Context Search

C67078-S3114-A2

12S10

XC6901D

XC6902N

XC6901D331MR-G

d331 npn transistor

AFT21S230SR3

phototransistor 650 nm

Untitled

AFT21S230S

transistor h 331

S321RDB

mosfet J 3305

DF 331 TRANSISTOR

transistor B A O 331

C 331 Transistor

IRF3303

lt 332 diode

p331

DF 331 TRANSISTOR

IRF331

transistor 331 p

2N3773 equivalent

MA4T64400