D 998 TRANSISTOR Search Results

transistor Bs 998

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 F e a tu re s • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 5:1 Type B F 998 M arking MO O rd ering C o d e tape and reel 1 Q 6 2 7 0 2 -F 1 129

T1P120

Abstract: TIP122 TIP122 HARRIS TIP12Q TIPI20 tip1220
Contextual Info: File Number HARRIS TIP120, TIP121, TIP122 998 SEHICOND SECTOR SbE D 43G2271 0 0 4 D 130 8-Ampere N-P-N Darlington Power Transistors HHAS 7 - 3 3 - 7 -9 60,80, and 100 Volts, 65 Watts Gain of 1000 at 0.5 A Gain of 1000 at 3 A TERMINAL DESIGNATIONS Features:

CMX998Q1

Abstract: CMX998 tetra modulation block diagram cmx998 cmx981 d998
Contextual Info: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/9 February 2009 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier

CMX998

Abstract: 4 QAM modem CMX998Q1 d 998 CMx7164 PLC circuit with OFDM CMX998 Calibration
Contextual Info: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/12 February 2013 Features • Frequency Range 30MHz to 1GHz  Wide Band Noise –148dBc/Hz  C-BUS SPI compatible Serial Interface  Gain Control  Error Amplifier

Contextual Info: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS D/998/6 July 2007 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier • Up Converter Forward Path

Contextual Info: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/11 September 2010 Features • Frequency Range 30MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier

1734D

Abstract: RCA-TIP120
Contextual Info: G E SOLID STATE 3875081 G E DÏ SOLID m T | 3 A 7S DA 1 D017336 Ô |~~ 01É STATE 1733 " ' 'V' 1 3 D Darlington Power Transistors_ TIP120, TIP121, TIP122 File Number 998 8-Ampere N-P-N Darlington Power Transistors * 60, 80, and 100 Volts, 65 Watts

CMX998

Abstract: 2D998
Contextual Info: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/7 October 2007 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier

Contextual Info: CMX998 CML Microcircuits COMMUNICATION SEMICONDUCTORS Cartesian Feed-back Loop Transmitter D/998/8 January 2008 Features • Frequency Range 100MHz to 1GHz • Wide Band Noise –148dBc/Hz • C-BUS SPI compatible Serial Interface • Gain Control • Error Amplifier

Contextual Info: 33E D • Ô23b350 001bô30 1 M S I P Silicon N-Channel MOSFET Tetrode BF 998 SIEMENS/ SPCL-, SEMICONDS • Short-channel transistor w ith high S /C quality factor • For low-noise, gain-controlled input stages up to 1 GHz T -3 I-2 S ' Type M arkin g O rd erin g coda

494 ic

Abstract: altera board
Contextual Info: Operating Requirements for Altera Devices J a n u a r y 1 998, ver. introduction D a ta S h e e t Altera devices combine unique programmable logic architectures with advanced CMOS processes to provide exceptional performance and reliability. To maintain the highest possible performance and reliability of

TIPI20

Contextual Info: File Number TIP120, TIP121, TIP122 998 8-Ampere N-P-N Darlington Power Transistors 60, 80, and 100 Volts, 65 Watts Gain of 1000 at 0.5 A Gain of 1000 at 3 A T E R M IN A L D E S IG N A T IO N S o Features: • Operates from 1C without predriver ■ Low leakage at high temperature

2SC998

Abstract: 2sc998 transistor 10N40 0F34 Toshiba 2SC998
Contextual Info: 5; ' J D y N P N I t i 5 > * = y J , U 7 L s - ï B h 5 y S ; Z 5 > SILICON NPN EPITAXIAL PLANAR TRANSISTOR O 1 5 0 ~ 1 7 5MHz * 2 s c 998 ) o VHF Power Amplifier Application (Low Supply a f i l i é INDUSTRIAL APPLICATIONS Vo 11age Use) ° Un it: mm Land-Mobile Power Amplifier and Frequency

Contextual Info: Datasheet February 1 998 m I C f 0 8 I C t f 0 111€ S g r O U p Lucent Technologies Bell Labs Innovations 1 4 1 0 - T y p e a n d 1 4 3 0 - T y p e T r a n s c e i v e r s wi t h C l o c k R e c o v e r y a n d D a t a R e t i m i n g for T e l e c o m m u n i c a t i o n s A p p l i c a t i o n s

Contextual Info: S IE M E N S Silicon N Channel M O SFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 G H z Type Marking Ordering Code tape and reel Pin Configuration 1 2 4 3 B F 998

bf998

Abstract: bf998 mosfet tetrode application note VPS05178
Contextual Info: BF998 Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor with high S/C quality factor 4
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05178 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BF998W

Abstract: SOT 343 MARKING BF BF998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor 4 with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

d 998 transistor circuit

Contextual Info: SIEM ENS Silicon N Channel MOSFET Tetrode BF 998 Features • Short-channel transistor with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 4 1 2 3 Package1) B F 998

BF998W

Abstract: 998 transistor bf998 102001 transistor BF 998
Contextual Info: BF998W Silicon N-Channel MOSFET Tetrode 3
Short-channel transistor 4 with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking

BF998R

Abstract: 998 transistor transistor BF 998
Contextual Info: BF998R Silicon N-Channel MOSFET Tetrode
Short-channel transistor with high S/C quality factor
For low-noise, gain-controlled input stages up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF998R MRs Pin Configuration

TRANSISTOR BH RW

Contextual Info: Silicon N-Channei M OSFET Tetrode BF 998 • Short-channel transistor with high S/C quality factor G2 • For low-noise, gain-controlled input stages up to 1 GHz § Type M a rk in g O rdering code for v e rsio n s in bu lk O rdering co de for v e rs io n s on tape

marking code g1s

Abstract: Q62702-F1129 D 998 TRANSISTOR
Contextual Info: Silicon N Channel MOSFET Tetrode BF 998 Features ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO

BF998

Abstract: marking code GL Q62702-F1129 d 998 transistor circuit
Contextual Info: Silicon N Channel MOSFET Tetrode ● Short-channel transistor with high S/C quality factor ● For low-noise, gain-controlled input stages up to 1 GHz BF 998 Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 4 Package1) BF 998 MO Q62702-F1129

VPT09050

Abstract: VPT09051
Contextual Info: SIEMENS SPUX5N60S5 SPDX5N60S5 Target data sheet Cool MOS Power Transistor • N-Channel • Enhancement mode • Ultra low gate charge VPT09051 VPT09050 • Avalanche rated • dv/df rated • 150°C operating temperature Type VDS b SPUX5N60S5 600 V 1.9 A