D 843 TRANSISTOR Search Results

p844m

Abstract: p845 P843M MP844 D 843 Transistor "micro power systems" mp845 MP843 dual fet L6
Contextual Info: aGE D • b 017 4 4.4 00033=10 5 I MICRO POWER SYSTEMS E /y i INC M P 843 MICRO POW ER SY ST EM S M P 844 M P 845 T'29'Z1 ULTRA LOW NOISE LOW DRIFT MONOLITHIC DUAL SILICON NITROX FIELD EFFECT TRANSISTORS DIFFUSED ISOLATED . en = 8nV/vr H T TYP.

D 843 Transistor

Abstract: TRANSISTOR 841 irf 840 D 843 Power Transistor irf 44 n transistor irf 840 843 transistor 840FI irf 44 ns TRANSISTOR 843
Contextual Info: rZ7 SGS-THOMSON ^7# 0 M »IIU iraM O g S IRF 840/FI-841/FI IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S(on IRF840 IRF840FI 500 V 500 V 0.85 fi 0.85 fi IRF841 IRF841FI 450 V 450 V 0.85 fi 0.85 0 IRF842 IRF842FI 500 V

D 843 Transistor

Abstract: 843FI e IRF 840 Application of irf840 IRF840 transistor irf 840 IRF 100A irf 44 n irf 44 ns SC 63 840
Contextual Info: rZ Z * •1 Ë . SGS-THOM SON IRF 840/FI-841/FI « » IL lË T O M O e s_IRF 842/FI-843/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS R d S od IRF840 IRF840FI 500 V 500 V 0.85 n 0.85 a IRF841 IRF841FI 450 V 450 V 0.85 n 0.85 Q IRF842

rca 3069

Abstract: Avansys Power rca power transistor 3069 astec custom power RCA 432 CISPR22 AV60A-048L-033D025 AV60A-048L-033D Common Mode Choke 1mH, 12A k 3531 transistor
Contextual Info: AV 6 0 A D u a l O u t p u t H a l f - b r i c k Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V and 3.3V/2.5V Dual Output 75W DC-DC Converter REV 01 TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355

D 843 Transistor

Abstract: irf 840 TRANSISTOR 841 sgs 841 IRF 80A D 843 Power Transistor irf z 44 st irf 44 n transistor irf 840 thomson tv
Contextual Info: 30E 3> • 7 ^ 2 3 7 002^01^ 7 ■ ^ T : 3 °l~ i3 / 7 7 SG STHO M SO N IR F 8 4 0 / F I - 8 4 1 /F I 4 7 l a [^D^ Q i[L[i(glF^(Q)K!]D(gi_ IR F 8 4 2 / F I - 8 4 3 / F 1 jS fi S - thomson" TYPE IRF840 IRF840FI IRF841 IRF841FI IRF842 IRF842FI IRF843

CR21-103J-T

Abstract: TM 1298 transformer capacitor 473j 100 EEFCDOJ470R D 843 Transistor LTC1436CGN-PLL dale r025f r025f Regulated Power Supply with mosfet switching Sche IRLML2803
Contextual Info: DEMO MANUAL DC140 DESIGN-READY SWITCHERS LTC1436-PLL 2-Output Synchronous Buck Converter with Versatile Frequency Controller U DESCRIPTIO Demonstration circuit DC140 is a 2-output, general purpose evaluation platform intended to demonstrate the many functions of the LTC 1436-PLL and to make it easy

NTE58

Abstract: NTE59
Contextual Info: NTE58 NPN & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V

D 843 Transistor

Abstract: 843 transistor
Contextual Info: Central CZT3120 Semiconductor Corp. SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR DESCRIPTION: The Central Semiconductor CZT3120 NPN Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a

Contextual Info: BSE D • Ô 2 3 b 3 2 0 0D 17E bö NPN Silicon Darlington Transistors S IE M E N S / SPCLi • • • 4 « S IP SMBTA13 SEMICONDS SMBTA14 High DC current gain High collector current Collector-emitter saturation voltage Type Marking Ordering code fo r versions In bulk

UFN841

Abstract: UFN041 mosfet ir 840 features Hjc 22
Contextual Info: UNITRODE CORP 9347963 T2 UNITRODE DeT| T347Tb3 D01D7ÔÜ & CORP 92D 10780 D f~ *? - 3 POWER MOSFET TRANSISTORS [“ 500 Volt, 0.85 Ohm N-Channel FEATURES » Compact Plastic Package • Fast Switching • Low Drive Current • Ease of Paralleling • No Second Breakdown

Contextual Info: DTB113ZK/DTB113ZS/DTB113ZF DTB113ZL/DTB113ZA/DTB113ZV 7 7 / T ransistors D T B 1 13 Z K /D T B 1 13 Z S /D T B 1 13ZF D T B 1 13 Z L /D T B 1 13 Z A /D T B 1 13 Z V {& triftM b 7 > v 7 7 h 7 > y 7 ^ < 7 / T r a n s i s t o r Switch Digital Transistors Includes Resistors)

Contextual Info: Power Transistors 2 S D 1 7 4 8 , 2SD1748, 2SD1748A 2 S D 1 7 4 8 A Package Dim ensions U n it ! mm Silicon NPN Triple-D iffused Planar D arlington Type 3.7m ax 7.3m ax. AF Power A m plifier C om plem entary Pair with 2SB1178, 2S B 1178A 3.2m ax. 0 .9 ± 0 . 1

f840

Abstract: IRF842R
Contextual Info: 3 H A R R IS IR F840/841/842/843 IRF840R/841R/842R/843R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 2 0 A B • 7A and 8A, 450V - 500V TOP VIEW • rDs on) = 0 .8 5H and 1.1 fl DRAIN (FLANGE) • Single Pulse Avalanche Energy Rated*

2SD1762

Contextual Info: h ’7 > ' s Z . $ /Transistors 2SD1762 x t:$ *y T J l'7 °ls -+ -B N P N h7 > y*$ Epitaxial Planar NPN Silicon Transistor i& J ij& ll^ ^ llf f l /L o w F r e q . Power Amp. 2S D 17 6 2 • ^ J fiv H iE I/D im e n s io n s U n it: mm • 1) VcE(sat) V C E (s a t)= 0 .5 V (T y p .)

MJE370

Abstract: MJE520
Contextual Info: r ^ z 7 7 S G # S - T H O M S O MJE370 MJE520 N M ^ Q 0 !y = © r a © R l g S COMPLEMENTARY MEDIUM POWER TRANSISTORS DESCRIPTION The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec TO-126 plastic package, designed for use in gene­

mje520

Contextual Info: • 7 ^ 5 3 7 0Qgq067 s g s - th o m 3 ■ *T s o n m je 3 ?o D [^@i[LiCT^ ô iD(gl_ S G S - T H OM S ON 3DE M JE520 D COMPLEMENTARY MEDIUM POWER TRANSISTORS DESCRIPTIO N The MJE370 (PNP type) and the MJE520 (NPN type) are silicon epitaxial-base transistors in Jedec

MAX843

Contextual Info: 19-0388; Rev 7 ; 3/96 JVW YXA JVX Low -Noise, R egulated, -2 V GaAsFET Bias F e a tu re s The M A X 8 40 /M A X 84 3/M A X 84 4 lo w -n o ise , in v e rtin g c h a rg e -p u m p p o w e r s u p p lie s are id e a l fo r b ia s in g GaAsFETs in cellular telephone transm itter am plifiers.

Contextual Info: SIEMENS BCR 112 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7ki2, R2=4.7k£2 Pin Configuration Q62702-C2254 1 =B Package II CO Ordering Code WFs O Marking BCR 112 LU II CNJ

irf 1962

Abstract: irf all transistor 840 Transistor 0235 IRF transistor irf 840 IRF 840 MOSFET IRF 840 transistor irf 647 MTP8N45 IRF843
Contextual Info: MOTOROLA IRF840 IRF841 IRF842 IRF843 SEMICONDUCTOR TECHNICAL DATA Part Number N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR T h e se T M O S Po w er F E T s are designed for high voltage, high speed pow er sw itch in g applications su ch as sw itch in g regulators,

2n2222 h 331 transistors

Abstract: 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 BC337 2n2222 331 transistors PNP 2n4403 331
Contextual Info: Philips Semiconductors Leaded transistors Selection guide GENERAL PURPOSE APPLICATIONS h re TYPE NUMBER VcEO V •c (mA) *T Plot (mW) min. max. typi (MHz) PAGE NPN BC107 45 100 300 125 500 300 87 BC108 20 100 300 125 900 300 87 BC109 20 100 300 240 900 300

2sb1748

Abstract: 2sb174 2SB1178 2SB1178A 2SD1748 2SD1748A
Contextual Info: 2SD1748, 2SD1748A Power Transistors 2SD 1748, 2SD 1748A Package D im ensions Unit ! mm Silicon NPN Triple-Diffused Planar Darlington Type 3 . 7m a x 7.3max. AF Power A m plifier C om plem entary Pair with 2SB1178, 2S B1178A 0.9 :0.1 0.5max. I 3. 2m ax . • Features

mpsw56 transistor

Contextual Info: MPS6729 Preferred Device One Watt Amplifier Transistor PNP Silicon http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –80 Vdc Collector–Base Voltage VCBO –80 Vdc Emitter–Base Voltage VEBO –4.0

Contextual Info: A '21 03 SINGLE-TURN TRIMMERS oo MODEL 80 Description TO-9 Transistor Case Single Turn Wirewound 1/4' Round or Square Single Turn Cermet 3/8' Square Single Turn Cermet 1/2' Round Single Turn Wirewound Page 15 Page 14 Page 12 Page 15 100 to 20KO ±5% ±50 10ftto2Mn

TIP11s

Abstract: TIP116 TIP110 TIP111 TIP112 TIP115 TIP117 USA060
Contextual Info: TIP115 TIP116 TIP117 SILICON DARLINGTON POWER TRANSISTORS P-N-P epitaxial-base transistors in m onolithic Darlington circu it fo r audio ou tp u t stages and general purpose am plifier and switching applications. T 0-220A B plastic envelope. N-P-N complements are