Untitled
Abstract: No abstract text available
Text: 8050S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER * Complement to 8550S * Collector C urrent: Ic=500mA * Collector D issipation: Pc=225mW Tc=25°C ABSOLUTE MAXIMUM RATINGS a t Tan*-25°C
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8050S
8550S
500mA
225mW
062in
300uS,
100uA
500mA
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PDF
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Untitled
Abstract: No abstract text available
Text: 8550S SEM ICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER Package: SOT-23 * Complement to 8050S * Collector Current: Ic=-500mA * Collector D issipation: Pc=225mW Ta=25°C ABSOLUTE M AXIMUM R ATINGS a t Tan*-2$ C
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8550S
OT-23
8050S
-500mA
225mW
300uS,
-100uA
-50mA
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PDF
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AN8050S
Abstract: vo217 v0217
Text: VOLTAGE REGULATORS AN8050S AN8050S IC fo r CD M ulti R egu lator • U nit : m m O u tlin e T h e A N 80 50 S is a n i n t e g r a t e d c ir c u it designed for CD m ulti r e g u l a t o r . It p r o v i d e s + 5V an d —4.3V r e g u l a t o r o u t p u t a s
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AN8050S
AN8050S
200mA
18-Lead
Packag17
vo217
v0217
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.
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8050SS-C
8050SS-D
-55OC
8050SS
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PDF
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Untitled
Abstract: No abstract text available
Text: z i y n v ^ ' T X C ’ y i ' - v m Panasonic i c A N 8050S IC /F o r Compact Desk Multi Regulator • M S U n it : m m A N 8 0 5 0 s ii, C D m -^juj-nm ic t 2 * « « i5 V tl» i, i- c s a is L f c ^ T t. + 5 V , - 4 . 3 V « ’> H p 3 . l ' - * r tt i*A‘
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8050S
200mA)
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.
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8050SS-C
8050SS-D
-55OC
8050SS
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PDF
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8050SS
Abstract: transistor 8050ss 8050SSD
Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.
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8050SS-C
8050SS-D
-55OC
8050SS
100uAdc,
transistor 8050ss
8050SSD
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PDF
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8050SS
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.
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8050SS-C
8050SS-D
-55OC
8050SS
100uAdc,
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PDF
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8050SS
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.
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8050SS-C
8050SS-D
-55OC
8050SS
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PDF
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8050SS
Abstract: 8050SSD transistor 8050ss
Text: MCC TM Micro Commercial Components 8050SS-C 8050SS-D omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts Tamb=25 OC of Power Dissipation.
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8050SS-C
8050SS-D
-55OC
8050SS
100uAdc,
8050SSD
transistor 8050ss
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PDF
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ir7103
Abstract: ic 8022 SI8023 8050S str str 8050S
Text: Power ICs R e te r to th e in d iv id u a l s p e c ific a tio n s fo r m e a s u re m e n t re q u irm e n ts of th e e le c tric a l c h a ra c te ris tic s . Power 1C Regulators Surface mount switching type Absolute Maximum Rat ngs _ Temperature Tstg(C)
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--SI-8022
STR7101
STR7102
STR71Q2
SI-8020
ir7103
ic 8022
SI8023
8050S str
str 8050S
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PDF
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AN8050S
Abstract: No abstract text available
Text: — 146 — AN8050S VtT W * — u — ? -c -, • y + v m m . t + 5 v , - 4 .3 V b t\z > . tK i l t Ä Ü ± 5V t i i t l 75' ± 8 0 m A ÿ f f ttT h 9 V ± 5 V tü J ji<£ 50m A , —4.3V ch ÿ j i i 10mA “C áó ^ . 2 & m < D ± s v ( y =? ( r „ = 2 5 C ) V cc
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AN8050S
200mA)
160mA
420mW
55--h
0-200mA
-50mA
-30mA
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PDF
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Untitled
Abstract: No abstract text available
Text: VOLTAGE REGULATORS AN8050S AN8050S IC fo r CD M ulti R egu lator • Unit : m m O u tlin e T h e A N 8 0 5 0 S is an in t e g r a te d c irc u i t designed fo r CD multi re g u l a t o r . It pro v ides + 5 V and —4.3 V r e g u l a t o r out put as ■ ~m 1 8
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AN8050S
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PDF
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d8050s
Abstract: UTC 8050SL marking D9 SOT-23 8050SL 8050S D 8050s transistor marking D9 NPN transistor 8050s ic 8050s sot 23 d9
Text: UNISONIC TECHNOLOGIES CO., D 8050S NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR 3 1 2 SOT-23 DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and
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8050S
OT-23
8050S
700mA
8550S
8050SL
8050S-x-AE3-R
8050SL-x-AE3-R
8050S-x-T92-B
8050SL-x-T92-B
d8050s
UTC 8050SL
marking D9 SOT-23
8050SL
D 8050s
transistor marking D9
NPN transistor 8050s
ic 8050s
sot 23 d9
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range
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8050S
30MHz
270TYP
050TYP
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IMZ88
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD IMZ88 DUAL TRANSISTOR GENERAL PURPOSE DUAL TRANSISTOR FEATURES *Both a 8550S chip d 8050S chip in a SMT package EQUIVALENT CIRCUITS (6) (5) TR1 TR2 (1) (4) (2) (3) ORDERING INFORMATION Ordering Number Lead Free Halogen Free
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IMZ88
8550S
8050S
IMZ88L-AG6
IMZ88G-AG6-R
OT-26
QW-R215-005
300ues
IMZ88
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PDF
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8050SST
Abstract: 8050SS
Text: 8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G H Emitter Collector Base J
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8050SST
8050SST-B
8050SST-C
8050SST-D
18-Feb-2011
100mA
800mA
800mA,
30MHz
8050SST
8050SS
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO:
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8050S
500mA
500mA,
30MHz
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PDF
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NPN transistor 8050s
Abstract: TRANSISTOR 8050s 8050S ic 8050s
Text: NPN TRANSISTOR 8050S 0.5A Power Dissipation: 0.625W Collector Current: 0.5A Collector-Base Voltage: 45V TO-92 MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS（Ta=25℃） PARAMETERS Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage
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8050S
100uA
500mA,
500mA
NPN transistor 8050s
TRANSISTOR 8050s
8050S
ic 8050s
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PDF
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8050S Transistor
Abstract: 8050s ic 8050s 8050s equivalent 8050s* Transistor
Text: 8050S 8050S TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.5 A Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃
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8050S
500mA
500mA,
30MHz
8050S Transistor
8050s
ic 8050s
8050s equivalent
8050s* Transistor
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PDF
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8050SS
Abstract: transistor 8050ss 8050SS Datasheet 8050ss TRANSISTOR equivalent 8050S 8050ss TRANSISTOR
Text: 8050SS 8050SS TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1 1. EMITTER W (Tamb=25 ) Collector current ICM: 2. COLLECTOR 1.5 A 3. BASE Collector-base voltage V(BR)CBO: 40 V 1 2 3 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
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8050SS
800mA,
8050SS
transistor 8050ss
8050SS Datasheet
8050ss TRANSISTOR equivalent
8050S
8050ss TRANSISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR NPN TO-92 FEATURES Power dissipation PCM: 1. EMITTER 0.625 W (Tamb=25℃) 2. COLLECTOR Collector current 0.5 A ICM: Collector-base voltage 40 V V(BR)CBO: Operating and storage junction temperature range
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8050S
500mA
500mA,
30MHz
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PDF
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NPN transistor 8050s
Abstract: 8050S 8550S
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TO-92 TRANSISTOR NPN FEATURES z Complimentary to 8550S z Collector current: IC=0.5A 1.EMITTER 2.COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol
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8050S
8550S
500mA
500mA,
30MHz
NPN transistor 8050s
8050S
8550S
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PDF
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8050S Transistor
Abstract: 8050s NPN transistor 500ma TO-92
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050S TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 0.5 A Collector-base voltage V BR CBO : 40 V Operating and storage junction temperature range
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Original
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8050S
O--92
500mA,
30MHz
8050S Transistor
8050s
NPN transistor 500ma TO-92
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PDF
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