Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    D 6 / 1400 Search Results

    D 6 / 1400 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH1400CQH Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 32 A, 0.0141 Ω@10 V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH1400CQ5 Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 150 V, 32 A, 0.0141 Ω@10 V, High-speed diode, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    HPH1-1400LD Coilcraft Inc General Purpose Inductor, 202uH, 25%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc
    HPH1-1400LB Coilcraft Inc General Purpose Inductor, 202uH, 25%, 1 Element, Ferrite-Core, SMD, ROHS COMPLIANT Visit Coilcraft Inc
    HPH1-1400L Coilcraft Inc Hexa-Path configurable magnetics, high inductance, SMT, RoHS Visit Coilcraft Inc
    SF Impression Pixel

    D 6 / 1400 Price and Stock

    Diodes Incorporated DFLU1400-7

    Rectifiers RECTIFIER SUPERFAST PWRDI 1.0A 400V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics DFLU1400-7 42,439
    • 1 $0.29
    • 10 $0.256
    • 100 $0.196
    • 1000 $0.128
    • 10000 $0.118
    Buy Now

    onsemi NLV14001BDTR2G

    Logic Gates QUAD 2-INPUT NOR GATE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics NLV14001BDTR2G 27,261
    • 1 $0.48
    • 10 $0.291
    • 100 $0.228
    • 1000 $0.182
    • 10000 $0.136
    Buy Now

    Texas Instruments LMR14006XDDCR

    Switching Voltage Regulators Wide Vin 40V 600mA B uck Regulator A 595-LMR14006XDDCT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LMR14006XDDCR 4,722
    • 1 $2.09
    • 10 $1.42
    • 100 $1.27
    • 1000 $1.11
    • 10000 $1.02
    Buy Now

    LeaderTech SG140009DS

    EMI Gaskets, Sheets, Absorbers & Shielding 9 Pin D-Sub Shield
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SG140009DS 4,464
    • 1 $3.22
    • 10 $1.99
    • 100 $1.59
    • 1000 $1.59
    • 10000 $1.55
    Buy Now

    Texas Instruments LMR14006YDDCR

    Switching Voltage Regulators Wide Vin 40V 600mA B uck Regulator A 595-LMR14006YDDCT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LMR14006YDDCR 3,036
    • 1 $2.09
    • 10 $1.42
    • 100 $1.27
    • 1000 $1.11
    • 10000 $1.01
    Buy Now

    D 6 / 1400 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    D6/1400 Eupec 6.0A Iout, 1.4kV Vrrm General Purpose Silicon Rectifier Scan PDF
    D6-1400 Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    D6/1400A Telefunken Electronic 6.0A Iout, 1.4kV Vrrm General Purpose Silicon Rectifier Scan PDF
    D6/1400A Telefunken Electronic 6.0A Iout, 1.4kV Vrrm General Purpose Silicon Rectifier Scan PDF

    D 6 / 1400 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    E-2507A

    Abstract: EI-33-1 EI33 ET2910A E-4215A ER39 EF2509 RM0600B ET4415A E2507A
    Text: Soft Ferrites Power Applications Switch Mode Power Supply Fig. 5 Fig. 6 b d b d Fig. 7 Fig. 8 h2 = = c a g ha gha g h a c d b i d3 d2 b f c j c = = h1 e E Cores See Fig. 5 5 5 5 5 5 See Fig. 6 6 6 6 P/N ETD cores ET2910A ET3411A ET3913A ET4415A ET4916A ET5419A


    Original
    ET2910A ET3411A ET3913A ET4415A ET4916A ET5419A EF1505A EF2007A EF2509A EF3009A E-2507A EI-33-1 EI33 ET2910A E-4215A ER39 EF2509 RM0600B ET4415A E2507A PDF

    PC3200R-30331-C0

    Abstract: HYS72D128300GBR-5-B HYS72D256220GBR-5-B PC2700R-25330-D0 HYS72D128300HBR-6-B pc2100r 25330 z DDR400 DDR400B HYS72D64301 pc2700r-25330-c0
    Text: January 2007 HYS72D64301[G/H]BR–[5/6]–B HYS72D128xxx[G/H]BR–[5/6/7]–B HYS72D256220[G/H]BR–[5/6/7]–B HYS72D256320[G/H]BR–[5/6/7]–B 1 8 4 - P i n R e g i s t e r e d D o u bl e - D a t a - R a t e S D R A M M o d u l e DDR SDRAM RoHS Compliant Products


    Original
    HYS72D64301 HYS72D128xxx HYS72D256220 HYS72D256320 HYS72D PC3200R-30331-C0 HYS72D128300GBR-5-B HYS72D256220GBR-5-B PC2700R-25330-D0 HYS72D128300HBR-6-B pc2100r 25330 z DDR400 DDR400B pc2700r-25330-c0 PDF

    PC2700R-25331

    Abstract: PC2700R-25331-C0 4070 data sheet cmos 4070 TFBGA 117-pin DDR400 DDR400B HYS72D64301HBR HYS72D256920HBR HYS72D128300HBR-5-C
    Text: Aug. 2006 HYS72D 64301H B R– [ 5 / 6 ] – C HYS72D128x00HBR–[5/6]–C HYS72D 128321 H BR– [ 5 / 6 ] – C HYS72D256x20HBR–[5/6]–C 1 8 4 - P i n R e g i s t e r e d D o u b l e - D a t a - R a t e SD R A M M o d u l e RDIMM DDR SDRAM RoHS Compliant


    Original
    HYS72D 64301H HYS72D128x00HBR­ HYS72D256x20HBR­ HYS72D64301HBR­ HYS72D128321HBR­ PC2700R-25331 PC2700R-25331-C0 4070 data sheet cmos 4070 TFBGA 117-pin DDR400 DDR400B HYS72D64301HBR HYS72D256920HBR HYS72D128300HBR-5-C PDF

    ISO 8015

    Abstract: HYS72D128300HBR-5-C PC2700R-25331 TFBGA 117-pin 6n25 cmos 4070 PC2700R-25331-F0 HYS72D64301HBR-5-C DDR400 HYS72D64301HBR
    Text: August 2007 HYS72D 64301H B R– [ 5 / 6 ] – C HYS72D 128300 H BR– [ 5 / 6 ] – C HYS72D 128321 H BR– [ 5 / 6 ] – C HYS72D256x20HBR–[5/6]–C 1 8 4 - P i n R e g i s t e r e d D o u b l e - D a t a - R a t e SD R A M M o d u l e RDIMM DDR SDRAM


    Original
    HYS72D 64301H HYS72D256x20HBR­ HYS72D64301HBR­ HYS72D128300HBR­ HYS72D128321HBR­ ISO 8015 HYS72D128300HBR-5-C PC2700R-25331 TFBGA 117-pin 6n25 cmos 4070 PC2700R-25331-F0 HYS72D64301HBR-5-C DDR400 HYS72D64301HBR PDF

    T2 WICKMANN FUSE

    Abstract: FUSE T 160mA wickmann 275 Wickmann USA
    Text: MINIATURE FUSES WICKMANN ag m L 5m e Series 241 10 Indicator Fuse 0 ,0 2m Tim x 5 diu 00 DIN 41 576, T.2 Tim e-current characteristics M in -M a x L im its Me D IN 4 1 5 7 6 , T .2 (8 0 . 1 0 0 m A ) D IN 4 1 5 7 6 , T .2 (1 2 5 m A .1 .2 5 A ) D IN 4 1 5 7 6 , T .2 (1 .6 0 . 6 .3 0 A )


    Original
    100mA 125mA 160mA 200mA 250mA 250VAC T2 WICKMANN FUSE FUSE T 160mA wickmann 275 Wickmann USA PDF

    Si6410DQ

    Abstract: 27 DIODE
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.014 @ VGS = 10 V "7.8 0.021 @ VGS = 4.5 V "6.3 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6410DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View


    Original
    Si6410DQ 08-Apr-05 27 DIODE PDF

    Si6410DQ

    Abstract: No abstract text available
    Text: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.014 @ VGS = 10 V "7.8 0.021 @ VGS = 4.5 V "6.3 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6410DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View


    Original
    Si6410DQ S-56945--Rev. 23-Nov-98 PDF

    S-49534

    Abstract: Si6434DQ
    Text: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 30 D TSSOP-8 D 1 S 2 S G D 8 D 7 S 3 6 S 4 5 D Si6434DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View


    Original
    Si6434DQ S-49534--Rev. 06-Oct-97 S-49534 PDF

    Untitled

    Abstract: No abstract text available
    Text: SN54AC11, SN74AC11 TRIPLE 3ĆINPUT POSITIVEĆAND GATES SCAS532D − AUGUST 1995 − REVISED OCTOBER 2003 D 2-V to 6-V VCC Operation D Inputs Accept Voltages to 6 V D Max tpd of 7.5 ns at 5 V 1 14 2 13 3 12 4 11 5 10 6 9 7 8 VCC 1C 1Y 3A 3B 3C 3Y 2A NC 2B NC


    Original
    SN54AC11, SN74AC11 SCAS532D SN54AC11 SN74AC11 SN74AC11N SN74AC11D SN74AC11DR SN74AC11NSR PDF

    Si6459DQ

    Abstract: No abstract text available
    Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original
    Si6459DQ 18-Jul-08 PDF

    Si6459DQ

    Abstract: No abstract text available
    Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original
    Si6459DQ 08-Apr-05 PDF

    Si6434DQ

    Abstract: No abstract text available
    Text: Si6434DQ Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOPĆ8 D S S G 1 2 3 D 8 Si6434DQ 4 7 6 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View


    Original
    Si6434DQ S44169Rev. PDF

    Si6459DQ

    Abstract: No abstract text available
    Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original
    Si6459DQ S-99446--Rev. 29-Nov-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 D 8 D 7 S 3 6 S 4 5 D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.


    Original
    Si6459DQ S-99446--Rev. 29-Nov-99 PDF

    T-OT-27

    Abstract: EUPEC km 17
    Text: D60N 7 ~ 0 1 - 3 . 1 D60NR EUPEC 52E D • anaBsi? oaaoöflfi 33o ■ upec Typen reihe/Type range_ D 6 0 N / D 6 0 N R _ 400 _800_ 1200_ 1400_ 1600 Elektrische Eigenschaften Electrical properties Höchstzulässiae Werte


    OCR Scan
    D60NR D60N/D60NR T-OT-27 EUPEC km 17 PDF

    Untitled

    Abstract: No abstract text available
    Text: Fast Recovery Epitaxial Diodes FRED U , = 8 - 582 A V Type RRM 1 @ T1c 'FAV U rms vF *FSM 10 m s @ t rr 'f m a x. 4 5 °C Irm @ -d i/d t typ. T vjm = 1 5 0 °C V A V A °C ^"v JM A ► D S E I 6 -0 6 A S 600 6 125 16 65 1.3 8 35 2.5 D S E I 8 -0 6 A D S E I 8 -0 6 A S


    OCR Scan
    PDF

    n channel mosfet 1400 v

    Abstract: FS20SM6
    Text: MITSUBISHI Neh POWER MOSFET FS20SM-6 HIGH-SPEED SWITCHING USE FS20SM-6 OUTLINE DRAWING D im ension s in mm 4.5 • V dss .300V .0.26Q • I d . 20 A


    OCR Scan
    FS20SM-6 n channel mosfet 1400 v FS20SM6 PDF

    tic 32a

    Abstract: V48A
    Text: DATA SHEET MOS INTEGRATED CIRCUIT 312 OUTPUT TFT-LCD SOURCE DRIVER COMPATIBLE WITH 64 GRAY SCALES T h e ¿¡PD16 6 3 6 is a s o u rc e d riv e r fo r T F T -L C D s ca p a b le of d e a lin g w ith d is p la y s w ith 6 4 g ra y sca le s. D ata in p u t


    OCR Scan
    SUMIZAC1003 tic 32a V48A PDF

    FK20KM6

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK20KM-6 HIGH-SPEED SWITCHING USE FK20KM-6 • v d s s •300V . • rDS ON (MAX) ■0.33Q • I d . ■■■ 20A • V iso. 2000V


    OCR Scan
    FK20KM-6 150ns FK20KM6 PDF

    40C1500

    Abstract: T1200 T1200N T1209N k005
    Text: E G-AKTIENGESELLSCHAFT SIC D • QDSTmS D00b513 □ M A E 6 6 p T 1200 N T 1209 N Typ enreihe/Type range T1200N 1200 1400 1600 1800 _T 1 2 0 9 N


    OCR Scan
    T1200N T1209N GG0b213 41787at T1H0S14 17/Detall 40C1500 T1200 T1209N k005 PDF

    Untitled

    Abstract: No abstract text available
    Text: HERRNANN 4SE KG D • M 4 3 b5 7S QQQ0CH3 T ■ HRMN T-*>l~X3 Schnelle Dioden Fast Switching Diodes Diodes rapides 15 1500 HDS 235/07 - 6 700 12 1200 15 1500 HDS 240/11 - 6 1100 14 1400 16 1600 HDS 280/11 -6 1100 15 1500 20 2000 HDS 350/20 -6 2000 22 2200


    OCR Scan
    443b57S 2200HDS PDF

    d3s diode

    Abstract: diode d2s RECTIFIER DIODES
    Text: Low power diodes Rectifier diodes blE D eupec Type Vrrm 34G3ET7 Ifsm D0[]135G 7^5 M U P E C O utline Ifavm trr tvj max A A IS °c 400 800 160 3 - 150 104 D 6 / 400 800 1200 1400 1600 100 6 150 106 Type V V br If s m t = 10 ms tvj = V i max V D 3 / Controlled avalanche diodes


    OCR Scan
    34G3ET7 d3s diode diode d2s RECTIFIER DIODES PDF

    68000l8

    Abstract: 68000L12
    Text: H D 6 8 0 0 0 HD68000-4. HD68000-6, HD68000-& HD68000-ia HD68000-12 H D 6 8 0 0 0 Y (HD68000Y4, HD68000Y6, HD68000Y8. H068000Y10. HD68000Y12) MPU (Micro Processing Unit) Advances in semiconductor technology have provided the capability to place on a single silicon chip a microprocessor at


    OCR Scan
    HD68000-4. HD68000-6, HD68000-& HD68000-ia HD68000-12) HD68000Y4, HD68000Y6, HD68000Y8. H068000Y10. HD68000Y12) 68000l8 68000L12 PDF

    iC-nc

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS20KM-6 HIGH-SPEED SWITCHING USE FS20KM-6 OUTLINE DRAWING Dimensions in mm • V d s s .3 0 0 V • rDS ON (MAX) .0 . 2 6 0


    OCR Scan
    FS20KM-6 O-220FN iC-nc PDF