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    D 4242 TRANSISTOR Search Results

    D 4242 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 4242 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    transistor C 4242

    Abstract: D 4242 transistor H 4242 transistor 4242 transistor D 4242 C 4242 transistor IC D 4242 H 4242 transistor 4242 TLE 4242 G
    Text: Adjustable LED Driver TLE 4242 G Features • • • • • • • • • • Adjustable constant current up to 500 mA ±5% Wide input voltage range up to 42 V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		PDF P-TO263-7-1 transistor C 4242 D 4242 transistor H 4242 transistor 4242 transistor D 4242 C 4242 transistor IC D 4242 H 4242 transistor 4242 TLE 4242 G

    D 4242

    Abstract: transistor C 4242 IC D 4242 H 4242 transistor H 4242 P-TO263-7-1 D 4242 transistor C 4242 transistor TO263-7 C 4242
    Text: Adjustable LED Driver TLE 4242 G Features • • • • • • • • Adjustable constant current up to 500 mA ±5% Wide input voltage range up to 42 V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		PDF P-TO263-7-1 D 4242 transistor C 4242 IC D 4242 H 4242 transistor H 4242 P-TO263-7-1 D 4242 transistor C 4242 transistor TO263-7 C 4242

    4269g

    Abstract: IC D 4242 D 4242 transistor transistor C 4242 H 4242 transistor TLE4242 infineon dragon transistor 4242 C 4242 transistor w57b
    Text: Adjustable LED Driver TLE 4242 G Target Data Features • • • • • • • • Adjustable constant current up to 500mA ±5% Wide input voltage range up to 42V Low drop voltage Open load detection Overtemperature protection Short circuit proof Reverse polarity proof


    Original     		PDF 500mA P-TO263-7-1 P-TO-263-7-1 4269g IC D 4242 D 4242 transistor transistor C 4242 H 4242 transistor TLE4242 infineon dragon transistor 4242 C 4242 transistor w57b

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6739 Issued Date : 1994.05.18 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSC4242 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSC4242 is designed for triple diffused planar type and high speed switching applications.


    Original     		PDF HE6739 HSC4242 HSC4242 O-220 183oC 217oC 260oC

    RL400

    Abstract: RL40 pma RL40-MOD RL40-PWR specification of rs 485 cable modbus pt1000 serial 442-X RL423-3 RL424-0 DS301
    Text: RL 400 Modular I/O system Plug-in I/O modules Suitable for CANopen/PROFIBUS-DP/MODBUS TCP Modules for numerous sensors and signals open Flexible plant design MODBUS PROFILE The input/output modules with fieldbus communication ports provide a high degree of flexibility when designing new


    Original     		PDF D-34123 RL400 RL40 pma RL40-MOD RL40-PWR specification of rs 485 cable modbus pt1000 serial 442-X RL423-3 RL424-0 DS301

    irf740 mosfet

    Abstract: power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334
    Text: IRF740 Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of


    Original     		PDF IRF740 O-220AB irf740 mosfet power MOSFET IRF740 transistor IRF740 TA17424 IRF740 TB334

    HD6417709A

    Abstract: hd64f7044 GC80503CS166EXT GC80503CSM66266 pic16f877 sine pwm lcd interface with at89c2051 intel 80486dx4 80386extc HD6417707 HD6417020
    Text: INDEX Subjects Products Suppliers Page 1. CPU & PERIPHERAL Embedded Processor Microcontroller CPU Peripherals DSP Voice Recognition Motorola / NS / Hitachi / Intel Atmel / Intel / Motorola / Hitachi / NS / Microchip NS / Intersil / Intel Motorola Sensory 2-10


    Original     		PDF RSC-300 HD6417709A hd64f7044 GC80503CS166EXT GC80503CSM66266 pic16f877 sine pwm lcd interface with at89c2051 intel 80486dx4 80386extc HD6417707 HD6417020

    B384F120T30

    Abstract: BCM reflow
    Text: Preliminary V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3


    Original     		PDF B384F120T30 B384F120T30 BCM reflow

    FX3G-24M

    Abstract: FX3G-14M mitsubishi plc FX3g 40m communication FX3G24M FX3G-40M mitsubishi MODBUS RTU mitsubishi plc FX3g 60m communication mitsubishi plc FX3g FX3G24M CAD FX3G-60M
    Text: Specifications /// MITSUBISHI ELECTRIC Product Information EBG 196-EN Specifications FX3G-14M„ FX3G-24M„ I/O points Max. 128 direct addressing and max. 128 remote I/O Power supply FX3G 100–240 V AC +10 % / -15 % , 50/60 Hz Program memory 32,000 steps EEPROM (internal), exchangeable EEPROM memory cassette with loader function


    Original     		PDF 196-EN FX3G-14M FX3G-24M IL-49001 IL-42160 ZA-1600 D-40880 24743-A FX3G-24M FX3G-14M mitsubishi plc FX3g 40m communication FX3G24M FX3G-40M mitsubishi MODBUS RTU mitsubishi plc FX3g 60m communication mitsubishi plc FX3g FX3G24M CAD FX3G-60M

    B384F120T30

    Abstract: D496 D505
    Text: B384F120T30 BCMTM Bus Converter • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – up to 1017 W/in3 • <1 µs transient response • Small footprint – 260 W/in2


    Original     		PDF B384F120T30 B384F120T30 D496 D505

    Untitled

    Abstract: No abstract text available
    Text: Preliminary V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3


    Original     		PDF B384F120T30

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3


    Original     		PDF B384F120T30

    FR-D720S

    Abstract: FR-D700 FR-D740-022-EC FR-D740-036-EC FR-D720S-042-EC FR-D740 FR-D740-120-EC FR-D740-080-EC FR-D740-050-EC FR-D740-160-EC
    Text: Specifications /// Product Information EBG 184-EN MITSUBISHI ELECTRIC FACTORY AUTOMATION Type FR-D720S-008-EC FR-D720S-014-EC FR-D720S-025-EC FR-D720S-042-EC FR-D720S-070-EC FR-D720S-0100-EC FR-D740-012-EC FR-D740-022-EC FR-D740-036-EC FR-D740-050-EC FR-D740-080-EC


    Original     		PDF 184-EN FR-D720S-008-EC FR-D720S-014-EC FR-D720S-025-EC FR-D720S-042-EC FR-D720S-070-EC FR-D720S-0100-EC FR-D740-012-EC FR-D740-022-EC FR-D740-036-EC FR-D720S FR-D700 FR-D740-022-EC FR-D740-036-EC FR-D720S-042-EC FR-D740 FR-D740-120-EC FR-D740-080-EC FR-D740-050-EC FR-D740-160-EC

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY V•I Chip Bus Converter Module B384F120T30 BCM V•I Chip – BCM Bus Converter Module TM • 384 V to 12 V V•I Chip Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3


    Original     		PDF B384F120T30

    B384F120T30

    Abstract: D496 D505
    Text: B384F120T30 BCMTM Bus Converter • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – up to 1017 W/in3 • <1 µs transient response • Small footprint – 260 W/in2


    Original     		PDF B384F120T30 B384F120T30 D496 D505

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Designs - Replaced by BCM384x120y300A00 B384F120T30 BCMTM Bus Converter • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation (TJ) • High density – up to 1017 W/in3


    Original     		PDF BCM384x120y300A00 B384F120T30

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY B384F120T30 BCMTM Bus Converter Module • 384 V to 12 V V•I ChipTM Converter • Typical efficiency 95% • 300 Watt 450 Watt for 1 ms • 125°C operation • High density – up to 1036 W/in3 • <1 µs transient response • Small footprint – 260


    Original     		PDF B384F120T30

    MM8001

    Abstract: M8-001 MM8000 M8000
    Text: MOTOROLA SC XSTRS/R F 4bE b3b7554 00^4242 b «NOTh D MOTOROLA •I SEMICONDUCTOR l TECHNICAL DATA MM8000 MM8001 The RF Line NPN SILICON AM PLIFIER TRANSISTORS N PN S IL IC O N H IG H -F R E Q U E N C Y T R A N S IS T O R . . . designed for high-frequency C.A.T.V. amplifier applications. Suit­


    OCR Scan     		PDF b3b7554 MM8000 MM8001 M8001) 240ohm MM8001 M8-001 M8000

    D 4242 transistor

    Abstract: IEC-664 insulation distances ST T4 1060 H 4242 transistor 4242 transistor
    Text: Optocouplers P lastic O ptocouplers P ut an end to erroneous data, false control signals, and damaged circuits with HP’s line of high-performance plastic optocouplers. There are six basic families of optocoup­ lers to choose from: high-speed logic gate, high-speed


    OCR Scan     		PDF

    D 4242 transistor

    Abstract: transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456
    Text: C r 9 ficanix 2N7086 Jm B in c o r p o ra t e d N-Channel Enhancement Mode Transistor TO-257AB Hermetic Package T O P VIEW o PRODUCT SUMMARY r DS ON • d (V) (H) (A) 200 0.16 14 V (BR)DSS 1 GATE 2 DRAIN 3 SO U R CE 1 2 3 Case Isolated ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)


    OCR Scan     		PDF 2N7086 O-257AB D 4242 transistor transistor C 4242 H 4242 transistor transistor 4242 4242 transistor 2N7086 w 1p 257AB A-1456

    lt 332 diode

    Abstract: 4242 DM 4243 dm IRFF330 IRFF331 IRFF332 IRFF333 diode 331 t2235 QA-750
    Text: 1 &£ D SILICONIX INC • Ö 2 5 4 7 3 5 GDlMflEl b ■ IRFF330/331/332/333 C T 'S ilico n ix Jm W incorporated N-Channel Enhancement Mode Transistors T TCJ-205AF - ^ - o q . BOTTOM VIEW PRODUCT SUMMARY PART NUMBER V BR|DSS IRFF330 400 1.0 3.5 IRFF331 350


    OCR Scan     		PDF IRFF330/331/332/333 IRFF330 IRFF331 IRFF332 IRFF333 O-205AF lt 332 diode 4242 DM 4243 dm diode 331 t2235 QA-750

    2sd 4242

    Abstract: c 3866 2SC4977 C3866 c 4242 c3505 C2656 2sd2431 I50F C4383
    Text: BIPOLAR TRANSISTORS Quick Selection Guide Comprehensive chart C o lle c to r c u rre n t le co n t. A P N P t r a n s is t o r VcEO (sus) V o lts m in . C o lle c to r-to e m itt e r v o lta g e 40 50 80 100 120 180 200 2 50 300 320 350 400 2S C 2929 3 2 S D 1 1 57


    OCR Scan     		PDF B1532 7S0916 2SD2431 1300M I200E I200ZP 2sd 4242 c 3866 2SC4977 C3866 c 4242 c3505 C2656 I50F C4383

    Untitled

    Abstract: No abstract text available
    Text: IRF740 Semiconductor Data Sheet July 1999 10A, 400V, 0.550 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of


    OCR Scan     		PDF IRF740 O-220AB

    D 4242 transistor

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MMSF3P03HD Medium Power Surface Mount Products Motorola Preferred Dtvlci T M O S P-Channel Field Effect Transistors SINGLE TMOS POWER FET 3.0 AMPERES 30 VOLTS MiniMOS™ devices are an advanced series of power MOSFETs


    OCR Scan     		PDF MMSF3P03HD D 4242 transistor