8060 transistor
Abstract: 104 csk 8060-1G6 M8058-1G18 8060-1G12 1G22 d 317 transistor transistor 373 transistor c 373 1g45
Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts,
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8060-1G11
8060-1G6
MIL-S-83502/2
MIL-S-83502/5.
8060 transistor
104 csk
8060-1G6
M8058-1G18
8060-1G12
1G22
d 317 transistor
transistor 373
transistor c 373
1g45
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free transistor equivalent book
Abstract: free all transistor equivalent book catalogue de transistor DTA124 124ESA rohm dtA124
Text: Transistors Digital transistors built-in resistors DTA124EE/DTA124EUA/DTA124EKA/ DTA124ECA/DTA124ESA •F e a tu re s 1) B uilt-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent cir
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DTA124
free transistor equivalent book
free all transistor equivalent book
catalogue de transistor
124ESA
rohm dtA124
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DF 331 TRANSISTOR
Abstract: transistor df 331 d 331 TRANSISTOR equivalent transistor b 1560 C 331 Transistor transistor h 331 y 331 Transistor transistor B A O 331 transistor 331 p D F 331 TRANSISTOR
Text: SOLITRON DEVICES INC ELEMENT NUMBER Üb DF|ü3höbD2 0D02ST3 D ~ M ED IU M VOLTAGE NPN SINGLE DIFFUSED MESA TRANSISTOR F O R M E R L Y 31 C O N T A C T M E T A L L IZ A T IO N Case, Emitter and Collector: So ld e r Coated 9 5 / 5 % lead/tin. A S S E M B L Y R E C O M M E N D A T IO N S
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0D02ST3
DF 331 TRANSISTOR
transistor df 331
d 331 TRANSISTOR equivalent
transistor b 1560
C 331 Transistor
transistor h 331
y 331 Transistor
transistor B A O 331
transistor 331 p
D F 331 TRANSISTOR
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transistor 373
Abstract: 8060 transistor
Text: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe
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8060-1G11
8060-1G6
MIL-S-83502/2
M1L-S-83502/5.
transistor 373
8060 transistor
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2N3773 equivalent
Abstract: transistor h 331 2n6262 2n4347 c112 TRANSISTOR d 331 TRANSISTOR equivalent
Text: 8368602 SOL ITRON DEVICES re » ? ©atm,®® INC T5 95D DE | f l 3 h a t . 0 E • 02903 00 0 5 ^ 0 3 D □ ^Sww&rßik T~ I — " Devices, Ine MEDIUM VOLTAGE CHIP N U M BER IMPIM SIN G LE DIFFUSED M ESA TRANSISTOR FORMERLY 31 CONTACT METALLIZATION Base, Emitter and Collector Solder Coated 95/5% lead/tin.
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JAN2N3771,
JAN2N3772,
2N3773.
2N4347,
2N4348,
2N6262
C-112
2N3773 equivalent
transistor h 331
2n6262
2n4347
c112 TRANSISTOR
d 331 TRANSISTOR equivalent
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2N3773 equivalent
Abstract: transistor c113 c113 transistor c112 TRANSISTOR d 331 TRANSISTOR equivalent transistor B A O 331 2N6262 2N6262 transistor 331 al jan2n3772
Text: pia E>iy <mr /a u m ® C o n tr a n Devices. Inc MEDIUM VOLTAGE CHIP NUMBER NPN SINGLE DIFFUSED M ESA TRANSISTOR FORMERLY 31) CONTACT METALLIZATION Base. Emitter and Collector Solder Coated 95/5% lead/tin. ASSEM BLY RECOMMENDATIONS It is advisable that:
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79mnj
JAN2N3771.
JAN2N3772.
2N3773.
2N4347.
2N4348.
2N6262
C-112
C-113
2N3773 equivalent
transistor c113
c113 transistor
c112 TRANSISTOR
d 331 TRANSISTOR equivalent
transistor B A O 331
2N6262
2N6262 transistor
331 al
jan2n3772
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200V transistor npn 2a
Abstract: samsung tv Samsung Semiconductor Q007t d 331 TRANSISTOR equivalent
Text: SAMSUNG SEMICONDUCTOR IME INC O 0007bM7 fl I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5004 T-33 -13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS HIGH Collector* ««* Voltage V eto « 1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C ) Characteristic CoHector-Base Voltage
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0007bM7
KSD5004
SaturatO-92
GQG77fe
200V transistor npn 2a
samsung tv
Samsung Semiconductor
Q007t
d 331 TRANSISTOR equivalent
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MJE350 equivalent
Abstract: No abstract text available
Text: SAMSUNG S E M IC O N D U C T O R MJE350 INC IM E D J 7 ^ 4 :1 ,4 2 00077Q5 1 PNP EPITAXIAL SILICON TRANSISTOR T HIGH COLLECTOR-EMITtER SUSTAINING VOLTAGE HIGH VOLTAGE GENERAL PURPOSE APPLICATIONS SUITABLE FOR TRANSFORMER " 1 3 ~ i< f TO-128 Complementary to MJE340
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MJE350
00077Q5
O-128
MJE340
GQG77fe
MJE350 equivalent
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transistor 711
Abstract: DO 127 samsung tv
Text: IME D I 7 ^ 4 1 4 2 Q007b?7 b | NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5016 SAM SUN G SEM ICOND UC TO R INC T-33-11 V COLOR TV HORIZONTAL OUTPUT APPLICATIONS TO-3P F High Collector-Bass Vottags Vcso=1500V ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Characteristic
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Q007b
KSD5016
T-33-11
GQG77fe
transistor 711
DO 127
samsung tv
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equivalent of SL 100 NPN Transistor
Abstract: Transistor transistor a 92 a 331 transistor 711 "SAMSUNG SEMICONDUCTOR"
Text: SAMSUNG SEMICONDUCTOR 14E INC D » 711, 4142 OOOTbSO fl NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5005 COLOR TV HORIZONTAL' OUTPUT APPLICATIONS TO-3P HIQH Collector-Base Voltage Vc*o=1500V ABSOLUTE MAXIMUM RATINGS Ta= 2 5 °C Characteristic Collector-Base Voltage
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KSD5005
GQG77fe
equivalent of SL 100 NPN Transistor
Transistor
transistor a 92 a 331
transistor 711
"SAMSUNG SEMICONDUCTOR"
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equivalent transistor c 243
Abstract: samsung tv
Text: SAMSU NG SEMICONDUCTOR INC D | 7^4142 GOO?b b f l 5 NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5013 T -3 3 -1 1 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN High Collector-Base Voltage VCbo=1500V ABSOLUTE M AXIM UM RATINGS (Ta = 25°C )
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KSD5013
0QG77fe
equivalent transistor c 243
samsung tv
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC KSD5001 1ME 0 | 0007b3fl 7 NPN t r i p l e d if f u s e d PLANAR SILICON TRANSISTOR T -3 3 -t 3 C O LO R T V HORIZONTAL O U TPU T A PPLICA TIO N S DAMPER DIODE BUILT IN HIGH Collector-Base Voltage’ V«o=1500V A B S O LU T E MAXIMUM RATINGS (Ta= 2 5 ° C)
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0007b3fl
KSD5001
0QG77fe
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samsung 217
Abstract: samsung tv NPN Transistor 1A 800V to - 92 ksd5002
Text: SAMSUNG SEMICONDUCTOR 14E INC D 7^4142 0QQ7t41 7 KSD5002 "T-33-13 COLOR TV HORIZONTAL OUTPUT APPLICATIONS (DAMPER DIODE BUILT IN HIGH Collector-Base Voltage V c so = 1500V ABSOLUTE MAXIMUM RATINGS (TB= 2 5 0C) Characteristic I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR
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0QQ7t41
KSD5002
GQG77fe
samsung 217
samsung tv
NPN Transistor 1A 800V to - 92
ksd5002
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC KSB596 IME D | 7^4142 0007502 4 PNP EXITAXIAL SILICON TRANSISTOR — “ T - 3 3 - ^ ;- POWER AMPLIFIER APPLICATIONS • Complément to KSD526 10-220 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Co/lector-Base Voltage
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KSB596
KSD526
GQG77fe
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Untitled
Abstract: No abstract text available
Text: SAMSUNG S E M IC O N D U C T O R INC KSC1098 1ME D | 7^1.4142 0007S33 4 NPN EPITAXIAL SILICON TRANSISTOR ' - 3 5 - c n LOW FREQUENCY AMPLIFIER • • • • Complement to KSA636 Collector-Base Voltage Vcao=7UV Collector Current lc =2 A Collector Dissipation Pc=10W Tc=25<,C
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0007S33
KSC1098
KSA636
GQG77fe
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samsung tv
Abstract: d 331 Transistor
Text: SAMSUNG SEMICONDUCTOR KSC1520 INC 1ME D | V 'lb m ia 0007S40 1 | NPN EPITAXIAL SILICON TRANSISTOR T 33- 07 COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter Voltage Vceo=250V • Current Gain-Bandwidth Product fT=80MHz iyp ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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0007S40
KSC1520
80MHz
O-202
GQG77fe
samsung tv
d 331 Transistor
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ts 4142
Abstract: ksa634 KSC1096
Text: SAMSUNG SEMICONDUCTOR INC 14E 0 KSA634 42 0007485 fi PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER POWER REGULATOR • Complement to KSC1096 • C ollector Current lc = -2 A • C ollector Dissipation PC=10W Tc =25',C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSA634
KSC1096
GQG77fe
ts 4142
ksa634
KSC1096
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transistor B A O 331
Abstract: C 331 Transistor KSR1001 d 331 TRANSISTOR equivalent
Text: KSR1001 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ias R esisto r Built In • Sw itching circuit, Inverter, Interface circu it, D river C ircu it • B uilt in b ias R e sisto r (R,«4.7kÜ, R î «4.71cQ) • Com plem ent to KSR2001 ABSOLUTE MAXIMUM RATINGS (TA-251C)
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KSR1001
KSR2001
TA-251C)
transistor B A O 331
C 331 Transistor
KSR1001
d 331 TRANSISTOR equivalent
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20A SOT-23
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR 14E INC KSC1096 O 0007S31 Q I NPN EPITAXIAL SILICON TRANSISTOR 7 LOW FREQUENCY POWER AMPLIFIER • Complement to KSA634 • Collector Current lc=2.0A • Collector Dissipation Pc =10W Ta=25°C ABSOLUTE MAXIMUM RATINGS (T.=25°C) Characteristic
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0007S31
KSC1096
KSA634
GQG77fe,
20A SOT-23
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transistor a 92 a 331
Abstract: TRANSISTOR Q 667 transistor samsung tv transistor D 667 D F 331 TRANSISTOR C 3311 transistor
Text: IME D I 7^4142 G00?b?4 I NPN TRIPLE DIFFUSED KSD5015 SAMSUNG SEMICONDUCTCR PLANAR SILICON TRANSISTOR INC COLOR TV HORIZONTAL OUTPUT APPLICATIONS T -33-11 TO-3P(F High Collector-Base Voltage Vceo-ISOOV ABSOLUTE MAXIMUM RATINGS (Ta= 25°C) Characteristic
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KSD5015
CTO-92
0QG77fe
transistor a 92 a 331
TRANSISTOR Q 667
transistor
samsung tv
transistor D 667
D F 331 TRANSISTOR
C 3311 transistor
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D F 331 TRANSISTOR
Abstract: lt 332 diode samsung tv NPN Transistor 1A 800V to - 92 C 3311 transistor transistor t 04 27
Text: SAMSUNG SEMICONDUCTOR 14E 0 INC 17^4142 I OOQ?bkS T NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5012 T-33-11 COLOR TV HORIZONTAL OUTPUT APPLICATIONS DAMPER DIODE BUILT IN TO-3P(F) High Collector-Base Voltage VCb o = 1 5 0 0 V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C )
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KSD5012
T-33-11
GQG77fe
D F 331 TRANSISTOR
lt 332 diode
samsung tv
NPN Transistor 1A 800V to - 92
C 3311 transistor
transistor t 04 27
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d 331 TRANSISTOR equivalent
Abstract: C 3311 transistor la 4142 74143
Text: SA MSUNG SEM ICO NDUCTOR INC 14E D | 7Tb4142 00071,5*1 4 I NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5010 C o l o r t v h o r iz o n t a l o u t p u t APPLICATIONS DAMPER DIODE BUILT IN High Collector-Bass Voltage VCbo =1500V ABSOLUTE MAXIMUM RATINGS (Ta= 25°C)
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7Tb4142
KSD5010
GQG77fe
d 331 TRANSISTOR equivalent
C 3311 transistor
la 4142
74143
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samsung tv
Abstract: 4142
Text: SAMSUNG INC S EM I C ON D U C T O R KSC1520A IME 0007542 NPN EPITAXIAL SILICON TRANSISTOR " r-3 2 > - c n ~ COLOR TV CHROMA OUTPUT TO-202 • High Collector-Emitter \foltaga Veto =300V • Current Gain-Bandwldth Product fT=80MHz Typ ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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KSC1520A
O-202
80MHz
GQG77fe
samsung tv
4142
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Untitled
Abstract: No abstract text available
Text: SAMSUNG SEMICONDUCTOR INC 1 14E D I 7 % ^ ^ 0007710 I : t - MJE3055T NPN SILICON TRANSISTOR GENERAL PURPOSE AN6 SWITCHING APPLICATIONS DC CURRENT GAIN SPECIFIED TO 10 AMPERES High C urrent Gain-Bandwidth Product fT = 2MHz (MIN ABSOLUTE MAXIMUM RATINGS (T«=25°C)
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MJE3055T
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