Atmel 2FB 2
Abstract: C3246 as179-92 c313 TRANSISTOR DATA c3286 74923 ic block diagram bluetooth motorola c3101 MC72000 Transistor C3246
Text: Freescale Semiconductor, Inc. Advance Information Data Sheet MC72000/D Rev. 2.6, 1/2003 MC72000 MC72000 Integrated Bluetooth Radio Freescale Semiconductor, Inc. Package Information Plastic Package Case 1398-01 MAPBGA–100 Ordering Information Contents
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MC72000/D
MC72000
MC72000
Atmel 2FB 2
C3246
as179-92
c313 TRANSISTOR DATA
c3286
74923 ic
block diagram bluetooth motorola
c3101
Transistor C3246
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Atmel 2FB 2
Abstract: ETC 9668 RX 7491 shift register IC MC72000 Colpitts VCO design 74101 DCS1800 PCS1900 lm 741 using schmitt trigger c313 TRANSISTOR DATA
Text: Advance Information Data Sheet MC72000/D Rev. 2.6, 1/2003 MC72000 MC72000 Integrated Bluetooth Radio Package Information Plastic Package Case 1398-01 MAPBGA–100 Ordering Information Contents 1 MC72000 Features . . . . 2 2 System Overview . . . . . . 3
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MC72000/D
MC72000
MC72000
Atmel 2FB 2
ETC 9668 RX
7491 shift register IC
Colpitts VCO design
74101
DCS1800
PCS1900
lm 741 using schmitt trigger
c313 TRANSISTOR DATA
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CSA748
Abstract: CSC1398 CSC1398A
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER
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ISO/TS16949
O-220
CSC1398,
CSC1398A
CSA748
C-120
CSA748
CSC1398
CSC1398A
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CSA748
Abstract: CSC1398 CSC1398A d 1398
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR
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O-220
CSC1398,
CSC1398A
CSA748
C-120
CSA748
CSC1398
CSC1398A
d 1398
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Untitled
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748
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O-220
CSC1398,
CSC1398A
CSA748
C-120
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Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR
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O-220
CSC1398,
CSC1398A
CSA748
C-120
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D 1398 Transistor
Abstract: d 1398 BLV98 32Q1 ci 1404
Text: N AMER PHILIPS/DISCRETE 86D OLE 0 1398 D "d • bfci53Ii31 D013b3b 3 3 - ft A ~~ BLV98 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor In SOT-171 envelope intended for use in class-B operated base station transmitters in the 900 MHz communications band.
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bfci53Ii31
D013b3b
BLV98
OT-171
BLV98
D 1398 Transistor
d 1398
32Q1
ci 1404
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777T
Abstract: No abstract text available
Text: 2SC3483 No.1398 NPN Triple Diffused Planar Type Silicon Transistor CRT For High D e f i n i t i o n SANYO D i sp la y Ho ri zo nt al Deflection Output Applications Features: • High breakdown voltage and high reliability • H i g h s w i t c h i n g speed:
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100ohm
VtC-200V
777T
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2SA748
Abstract: 2SC1398
Text: Pow er T ransistors 2SA748 2SA748 Silicon PNP Epitaxial Planar Type Package D im ensions M edium Pow er A m p lifie r C om plem entary Pair w ith 2SC 1398 Unit : mm 10.5 ± 0 .5 • Features s 9.8max. Ol« • Large collector pow er dissipation P c rtt-H
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2SA748
2SC1398
35flSE
2SA748
2SC1398
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AX3510
Abstract: No abstract text available
Text: jy\JY X A JV \ 19-1398; Rev 1; 12/98 U p stre am CATV A m p l if ie r Features The M A X 3510 is a p ro g ra m m a b le p o w e r a m p lifie r fo r use in CATV upstream a p p lica tio n s. The d e v ic e outputs up to 6 4dB m V continuous w ave thro u g h a 2:1 (voltage
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Untitled
Abstract: No abstract text available
Text: REVISIONS 5 11 IMI &I w w l IIM m u l t i r n m DCP # REV DOC. NO. SPC—F004 DESCRIPTION n 1885 A DRAWN DATE EO 02/03/06 RELEASED * Effective: 7 /8 /0 2 CHECKD DATE HO 2/6/06 * DCP No: 1398 APPRVD DATE JWM 2/6/06 D e s c r ip t io n : H I G H - S P E E D SATURATED SWITCH. Th e 2 N 2 3 6 9 A is a s ilic o n p la n a r e p ita x ia l N P N in J e d e c T O — 18,
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SPC--F004
300MHz
M2/6/06
2N2369A
35C0691
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Untitled
Abstract: No abstract text available
Text: CSC1398; CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier DIM A B C D E F G H J K L M N MIN MAX 16,51 10.67 4,83 0,90 1.15 1.40 3.75 3.88 2.29 2.79 2,54 3.43 0,56 12,70 14.73 6.35 2.92 2.03 31.24 7 DEG 14.42
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CSC1398;
CSC1398A
CSC1398,
CSA748
DDD113fl
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d 1398
Abstract: 1398 CSA748 CSC1398 CSC1398A
Text: CSC1398, CSC1398A CSC1398, CSC1398A NPN PLASTIC POWER TRANSISTORS Complementary CSA748 Medium Power Amplifier PIN CONFIGURATION 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DIM A B C D £ F G H J K L M N MIN 14.42 9.63 3,56 MAX 16.51 10.67 4,83 0.90 1.15 1.40
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CSC1398,
CSC1398A
CSC1398A
CSA748
00011i3Ã
d 1398
1398
CSC1398
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tca150c
Abstract: 1j99 SOLITRON
Text: S O L I IR ON ÜLVILLÜ INC bl l ' v a _o_i »E|fl3t.aL0E ODOISST 4 ENGINEERING DEVICE SPECIFICATION NO. 6079/2N2697 SILICON TRANSISTOR GENERAL DESCRIPTION This device JLa an NPN Triple Diffused Planar Power Transistor packaged in an HD case, designed primarily for switching applications
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6079/2N2697
hF68602
DATEL2/26/62
tca150c
1j99
SOLITRON
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PC9203
Abstract: PC638 PC6079 PC5671 PC160-1 PC44E PC9166 PC5303 C6650 PC9202
Text: HA RR IS S E M I C O N D S E C T O R 27E » • M3 D2 27 1 Q 0 2 0 b 5 4 1 H H A S T -2 & -O I Power Transistor Chips Chip type No. VcEOtSUS V)m ln. Iceo (í¿A) max. — — — — — PC44E PC44H P C 4 5 E* P C 45H * PC 1482 66 33 -66 -33 60 PC2102 PC3439
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PC44E
PC44H
PC2102
PC3439
PC3442
PC3585
PC3879
PC4036*
PC5038
PC5240
PC9203
PC638
PC6079
PC5671
PC160-1
PC9166
PC5303
C6650
PC9202
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon High-Voltage Transistors BFN 24 BFN 26 • Suitable for video output stages in TV sets and switching power supplies • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: BFN 25, BFN 27 PNP Type
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Q62702-F1065
Q62702-F976
OT-23
fl535b05
aE35hDS
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D 1398 Transistor
Abstract: k 1398 Transistor
Text: REVISIONS m ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # SPC—F005.DWG REV DOC. NO. S PC -F005 DESCRIPTION DRAWN DATE / / Effective: 7 / 8 / 0 2
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-F005
SPC--F005
20MHz
500mV,
2N3700
D 1398 Transistor
k 1398 Transistor
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2SA748
Abstract: 2SC1398 BSBE
Text: Power Transistors 2SA748 2SA748 Silicon PNP Epitaxial Planar Type Package Dim ensions Medium Power Am plifier Com plem entary Pair with 2SC1398 la U nit : mm 1 0 .5 ± 0 .5 • Features £ ,9 .8 m a x . «■a f»» w7 • L arg e c o lle c to r p o w e r d issip a tio n P c
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2SA748
2SC1398
2SA748
2SC1398
BSBE
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D 1398 Transistor
Abstract: k 1398 Transistor
Text: REVISIONS m ulticom p A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # SPC— F005.DWG REV DOC. NO. S P C -F005 DESCRIPTION DRAWN 1447 RELEASED
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-F005
ove002
20MHz
500mV,
2N2102
35C0687
-F005
D 1398 Transistor
k 1398 Transistor
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D 1398 Transistor
Abstract: k 1398 Transistor
Text: REVISIONS multicomp A LL RIGHTS RESERVED. NO PORTION OF THIS PUBLICATION, WHETHER IN WHOLE OR IN PART CAN BE REPRODUCED WITHOUT THE EXPRESS WRITTEN CONSENT OF SPC TECHNOLOGY. DCP # REV DOC. NO. SPC—F005 DESCRIPTION DRAWN RELEASED BYF 1885 DATE / 02 0 3/0 6
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SPC--F005
100kH
2N4920
-F005
D 1398 Transistor
k 1398 Transistor
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N SD1398 ;U RF & MICROWAVE TRANSISTORS 850-960 MHz APPLICATIONS 850 - 960 MHZ 24 VOLTS COMMON EMITTER OVERLAY GEOMETRY GOLD METALLIZATION P o u t = 6.0 W MIN. WITH 10.0 dB GAIN PIN CONNECTION 1 n O O DESCRIPTION The SD1398 is a gold metallized epitaxial silicon
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SD1398
SD1398
SD1423
SD1424.
7T2T237
0D7D21b
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Untitled
Abstract: No abstract text available
Text: bbS3T31 QD2S 4bO S7b « A P X N AUER PHILIPS/DISCRETE BSP30 TO 33 b?E » JV SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in miniature plastic envelopes intended for application in thick and thin-film circuits. They are intended for use in telephony and general industrial applications.
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bbS3T31
BSP30
BSP30
BSP31
BSP32
BSP33
00354b3
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BFR183W
Abstract: No abstract text available
Text: SIEMENS BFR 183W NPN Silicon RF Transistor • For low noise, high-gain broadband amplifiers at collector current from 2 mA to 30mA • f j = 8 GHz F = 1.2 dB at 900 MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code
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Q62702-F1493
OT-323
900MHz
BFR183W
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Untitled
Abstract: No abstract text available
Text: REVISIONS L m ulticom p DCP # REV DESCRIPTION DRAWN DATE Effective: 7 / 8 / 0 2 * DCP No: 1398 CHECKD DATE RELEASED HO 12 2 /0 2 JWM 12 2 /0 2 DJC 12 2 /0 2 UPDATED TO ROHS COMPLIANCE EO 0 2 /0 3 /0 6 HO 2 /6 /0 6 HO 2 /6 /0 6 1262 B DOC. NO. SPC— F004
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2N2222A
300MHz
300jus,
2N2222A
35C0690
SPC-F004
SPC-F004
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