P13009
Abstract: PL130-09 QFN16L
Text: PL130-09 High Speed Translator Buffer to LVDS 2 GND 3 LVDS 4 GND 14 GND 15 OE^ 16 GND 6 LVDS_BAR 5 VDD 12 11 10 9 PL130-09 1 2 3 4 GND 13 7 REF_IN GND VDD GND REF_IN 8 VDD 1 VDD The PL130-09 is a low cost, high performance, high speed, buffer that reproduces any input fr equency from 0 to 1.0GHz. It provides a pair of
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PL130-09
100mV
PL130-09
P13009
QFN16L
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SVRME28
Abstract: No abstract text available
Text: SVRME28 Series SPACE QUALIFIED HYBRID EMI FILTERS Models Available Input: 28 V nominal 10 A output Qualified to MIL-PRF-38534 Class H and Class K Design for TOR Compliance SVRME Series EMI Filter 1.0 DESCRIPTION 1.2 SPACE LEVEL CHARACTERIZATIONS The SVRME is specifically designed for use with the SVR series
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SVRME28
MIL-PRF-38534
SVRME28
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TM-1010
Abstract: TM-1015 TM2072
Text: SVRME28 Series SPACE QUALIFIED HYBRID EMI FILTERS Models Available Input: 28 V nominal 10 A output Qualified to MIL-PRF-38534 Class H and Class K, TOR Compliant SVRME Series EMI Filter 1.0 DESCRIPTION 1.2 SPACE LEVEL CHARACTERIZATIONS The SVRME is specifically designed for use with the SVR series
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SVRME28
MIL-PRF-38534
SVRME28
TM-1010
TM-1015
TM2072
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13005
Abstract: E 13009 L 13001 dip40 package 13001 datasheet 13005 2 SSO24 transistor 13009 D-16 D-20
Text: IC Packaging Information Package Information Ceramic DIP, 8-16 Leads E 1 E1 2 D S A1 A L L2 b e L1 C b1 Q e1 Dim Millimeters Min Max Inches Min Max A A1 b b1 C D-8 D-14 D-16 E E1 e e1 L L1 L2 S-8 S-14 S-16 4.06 5.08 1.27 2.16 1.14 1.65 0.38 0.51 0.20 0.30
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SSO28
SSO24
SSO24
SSO44
Aug-96
SSO64
13005
E 13009 L
13001
dip40 package
13001 datasheet
13005 2
transistor 13009
D-16
D-20
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Leach relay M83536
Abstract: MS25271-D1 M83536 M83536/10-024 M39016-6-109L MS27400 MS27743 MS27401 M83536/2-024 MS27400-9
Text: QPL Qualified Products Listing Solutions for Power Switching and Control Authorized Worldwide Distributors UNITED STATES ALABAMA Avnet Electronics Marketing Huntsville Ph: 256 837-8700; Fax: 830-2565 ARIZONA Avnet Electronics Marketing Phoenix Ph: (480) 643-5600; Fax: 643-5775
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F-57430
5/2004/2K
Leach relay M83536
MS25271-D1
M83536
M83536/10-024
M39016-6-109L
MS27400
MS27743
MS27401
M83536/2-024
MS27400-9
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M83536/13-008
Abstract: leach power distribution unit
Text: INCH-POUND MIL-PRF-83536/13B 15 April 2002 SUPERSEDING MIL-PRF-83536/13A 12 October 2000 PERFORMANCE SPECIFICATION SHEET RELAYS, ELECTROMAGNETIC, ESTABLISHED RELIABILITY, DPDT, LOW LEVEL TO 10 AMPERES, MAGNETIC LATCH, HERMETICALLY SEALED, ALL WELDED, TRANSIENT SUPPRESSED DC COILS
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MIL-PRF-83536/13B
MIL-PRF-83536/13A
MIL-PRF-83536.
MIL-PRF-83536,
M83536/13007
M6106/50-
M6106/36-
M83536/13-008
leach power distribution unit
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SR 13009
Abstract: E 13009 e13009 transistor sr 13009 transistor E 13009 D 13009 K 13008 TRANSISTOR E 13009 L e 13009 f J 13009 - 2
Text: Tem ic TE13008 • TE13009 TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • HIGH SPEED technology • High reverse voltage • Power dissipation Pu,| = 100 W • Glass passivation • Short switching times Applications Electronic lamp ballast circuits
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TE13008
TE13009
SR 13009
E 13009
e13009
transistor sr 13009
transistor E 13009
D 13009 K
13008 TRANSISTOR
E 13009 L
e 13009 f
J 13009 - 2
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CI 13007
Abstract: bud48 13005 A BUX 115 BUD48A 13005 ballast BUD98I BUV-481 MJE-13007 BUV 471
Text: {ZT SGS-THOMSON Ä 7 # MD K I[LiOT©liî!IDËi CONSUMER RADIO AND AUDIO MEMORIES CMOS EEPROMs Type Package Description ST24C02 TS59C11 TS93C46 DIP8, S08 DIP8 DIP8 256 x 8, clock frequency 100 kHz, I2C compatible 128 x 8, clock frequency 250 kHz, consumption 3/0.1 mA
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ST24C02
TS59C11
TS93C46
M9306
M9346
CI 13007
bud48
13005 A
BUX 115
BUD48A
13005 ballast
BUD98I
BUV-481
MJE-13007
BUV 471
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176380-3
Abstract: No abstract text available
Text: 4 I •h I *£#£ : o / t\ * : OD n U N ft I ^ i* >■:T ; 7 y ? X A 0 66-^- -f o ^ CUL 9 4 V - 0 J 7. 15 ft, A*. «3 ^ ^ ^ A *an-i±_ti-r : ? v ; A W t . 3>*mJiA_h.0D — v >r 'U -!'' * > v * » C » * * « 0. 3pm3C.ii , 0. 76jjmUjt_h.<75 f t > y , W « 1fJMJ, _fc<r>^ 9 > v *
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76jjm
76pro'
29/HAY/
176380-3
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PDF
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j 13009
Abstract: J 13009 - 2 e 13009 f mj 13009 E 13009 L p 13009 D 13009 K 13009R
Text: ± 0 N m ü re ID Is- ; / l \ t * *4 CUL a. O * id OQ z -D z ^ Í7-* ; : * ' ^ <? 94V -0) ^ & 7 b * 'J ^ V ' S> 3 C IR C U IT *7 6 6 -^- - f a -fe . J» . : . ^ ^ IT : » H l . N O .1) A * * ^ ^7 ^ ^ e in . 3 /aml¿X _L<iO — 'V =*c t ^ » Ä i S I 5 0 . 3 pm ü i,_ b < ^ .^ r> ^ =V , 8*P*|$1 p.miiX J^ co * ¥ - æ ^
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J-12583
30-JAN
j 13009
J 13009 - 2
e 13009 f
mj 13009
E 13009 L
p 13009
D 13009 K
13009R
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. W V COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC DIST R E V IS IO N S DE EO ALL RIGHTS RESERVED. P LTR F MILITARY PART N U M B E R , 0 0 7 7 9 , M A R K E D ON O P P O S I T E SIDE.
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31MAR2000
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PDF
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diode D45C
Abstract: JE 800 transistor L146 IC BD800
Text: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*
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340B-03
JF16006A
JF10012#
100/12k
JF16212*
JF16018*
JF16206
D44VH10
D45VH
diode D45C
JE 800 transistor
L146 IC
BD800
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PDF
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MT4C16270DJ-7
Abstract: No abstract text available
Text: M IC R O N Mi MT4C16270 256Kx 16 DRAM TtoiMxasr. MC. DRAM 256K x 16 DRAM EDO PAGE MODE FEATURES • Industry-standard x l6 pinouts, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5V ±10% power supply* • Low power, 3m W standby; 375m W active, typical
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MT4C16270
256Kx
512-cycle
40-Pin
MT4C1027Q
MT4C16270DJ-7
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e13009
Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and
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MJE13005*
e13009
E13009 TRANSISTOR equivalent
4000w audio amplifier
JE-I3009
4000w inverter circuit
4000w power amplifier
equivalent of transistor mje13007
mje13009 equivalent
125VDC to 24 VDC regulator circuit
Motorola Bipolar Power Transistor Data
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2yl1
Abstract: GNS 3011 2SC3003 13007 h3 324C 3014-100 54ls541 die itt diodes lz 1a1 hi1a2 E 13007
Text: MIL-M-38510/324C 15 OCTOBER 1987 SUPERSEDING-MIL-M-38510/324B 16 February 1984 MILITARY SPECIFICATION MICROCIRCUITS, DIGITAL, BIPOLAR, LOW-POWER SCHOTTKY, TTL OCTAL BUFFER GATES WITH THREE-STATE OUTPUTS, MONOLITHIC SILICON This specification Is approved for use by all Depart
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HIL-M-38510/324C
MIL-M-38510/324B
MIL-M-38510,
MIL-M-38510/324C
2yl1
GNS 3011
2SC3003
13007 h3
324C
3014-100
54ls541 die
itt diodes lz 1a1
hi1a2
E 13007
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54HC08
Abstract: SR 13003 E 13007-1 54hc32 J006 13003 sd 9lc marking E 13007 E 13009 z EN 13009
Text: MIL-M-38510/652A 15 Ma* 1987 5 U P L K 3 E Ü I N G -MIL-M-38510/652 31 Ma r c h 1986 M I LI TARY S PECI FI CAT I ON »„ n „ . M I C R O C I R C U I T S , D I G I T A L , HIGH SPEED, CMOS, AND GATES, OR GATES, MONOLITHIC S I L I C O N , P O S I T I V E LOGIC
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MIL-M-38510/652A
MIL-M-38510/652
Sha11
MIL-M-38510,
54HC32
54HC86
54HC08
54HC11
MIL-M-38510/652A
60VERMENT
SR 13003
E 13007-1
J006
13003 sd
9lc marking
E 13007
E 13009 z
EN 13009
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