D 1062 TRANSISTOR Search Results

2SK1213

Abstract: transistor 2sk1213 D 1062 transistor adit Field Effect Transistor Silicon N Channel MOS vdss 600
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSH 2SK1213 HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR,DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS FEATURES: • Low Drain-Source ON Resistance : RDS(0N)= 0.95Q (Typ.)

Contextual Info: SIEMENS BCR 569 PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=4.7kfl JZL LÜ XLs UPON INQUIRY 1 =B Package o BCR 569 Pin Configuration II CO Marking Ordering Code liJ HI II

C744

Abstract: BC301-6 cp409 SGS-ATES c426 BFY72 sgs c426 Transistor 2N3866 BC119 sgs-ates BFR97
Contextual Info: S G S -A T E S Semiconductors Transistors -N P N N P N Medium Po w er Transistors R EFEREN CE T A B L E 0.8 6* 6* «* 3* o u_ C ode BC119 BC300 BC301 BC302 BFR36 M ax P tot @ T * m b = 25 -C W 30 80 60 45 30 Max lc (A ) 1 7 7 7 0.3 @ lc (m A ) Min fr (MHz)

2N4896

Abstract: 2N4897 2n4895
Contextual Info: r Z 7 SGS-THOMSON 2N4895 ^ 7 # MtOtHKmKMMQS_ 2N4896/2N4897 HIGH CURRENT, FAST SWITCHING APPLICATIONS DESCRIPTIO N The 2N4895, 2N4896 and 2N4897 are silicon epi­ taxial planar NPN transistors in Jedec TO-3 metal case. They are intended for high current, fast switching

marking BFG

Abstract: sot 223 marking code 4c
Contextual Info: SIEMENS BFG 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA ESP: Electrostatic discharge sensitive device, observe handling precaution!

D 1062 transistor

Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor GENERAL DESCRIPTION PHP3N60E QUICK REFERENCE DATA SYMBOL N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

Contextual Info: PZT3906 _ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a m icrominiature SMD package SOT-223 . Designed prim arily fo r high-speed, saturated switching applications in industrial service. QUICK REFERENCE D ATA

BFR53

Abstract: transistor 1061 transistor h 1061
Contextual Info: • 1.1,S3 S 31 00251Mb MS3 H A P X Philips Semiconductors Product specification AflER P H I L I P S / D I S C R E T E b7E D NPN 2 GHz wideband transistor DESCRIPTION BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application In thick and thin-film

Contextual Info: bbS3^31 002514b MS3 H A P X Philips Semiconductors N AKER PHILIPS/DISCRETE Product specification b7E D NPN 2 GHz wideband transistor DESCRIPTION c BFR53 PINNING NPN transistor in a plastic SOT23 envelope. It is intended for application in thick and thin-film

Contextual Info: Philips Semiconductors Objective spécification PowerMOS transistor G EN ER AL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and

SGS-ATES c426

Abstract: ME6002 BFR97 SGS-Ates BC125 sgs-ates transistors ME6101 sgs c426 BC142 BC300
Contextual Info: M icro- Electronics Sem iconductors NPN Transistors N P N Medium Power Transistors R EFER EN C E T A B L E C426 30 BC125 BC142 BC300 min. 15 a l c mA (Ok I c fT Cob pF 150 40 25 19578D 66 150 40 200 150 40 120 25 12 — 76 67 0.5 150 120 — 19480B 19491G

transistor 356 j

Abstract: transistor 356 b
Contextual Info: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h 5.3 A ^DSion Package Ordering Code 2H TO-218 AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values b 5.3

Contextual Info: 47E D ÔE35bOS QG2175S 7 «IS IE G SIEMENS SIEMENS AKTIENGESELLSCHAF 7 ^ j 9 - / 3 BUZ 230 SIPMOS Power MOS Transistor Vos la ^D S on = 1000 V = 5.5 A = 2.0 Q • N channel • FREDFET • Enhancement mode • Package: T O -204A A (T O -3 )1) Type Ordering code

siemens 230 98 O

Abstract: siemens 230 siemens EC 230 98 siemens 230 98 a1105 T-39-13
Contextual Info: 47E D 053SbOS 0051755 7 B I S I E G SBEMENS SIEMENS AKTIENGE SE LLS CH AF 7 ^ 3 9 - 0 BUZ 230 SIPMOS Power MOS Transistor Vos /„ •O S o n = 1000 V = 5.5 A = 2.0 fi • N channel • FREDFET • Enhancement mode • Package: TO-204AA (TO -3)1) Type

2N4896

Abstract: 2N4897 2N4895-2N4896-2N4897
Contextual Info: • 7^237 002^305 SCS-THOMSON M ùntom i ?«« S G S-TH0MS0N 1 2 N4895 2N4896/2N4897 3QE D HIGH CURRENT, FAST SWITCHING APPLICATIONS DESCRIPTIO N The 2N4895, 2N4896 and 2N4897 are silicon epi­ taxial planar NPN transistors in Jedec TO-3 metal case. They are intended for high current, fast switching

Contextual Info: SIEMENS BUZ 356 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 356 Vbs 800 V h ^DS on Package Ordering Code 5.3 A 2w TO-218AA C67078-S3108-A2 Maximum Ratings Parameter Symbol Continuous drain current Values Unit

Contextual Info: SIEMENS SIPMOS Power MOS Transistor VDS l0 ^ D S o n BUZ 230 = 1000 V = 5.5 A = 2.0 Q • N channel • FREDFET • Enhancem ent mode • Package: T O -204A A (T O -3 )1) Type Ordering code BUZ 230 C 6 7 0 7 8 -A 1 105-A2 Maximum Ratings Parameter Symbol

Contextual Info: h 7 > y X $ /Transistors FMY3 FMY3 x f c f $ ^ r '> T ^ 7 V - ^ y a . 7 7; i / $ - ; E - ; i / K P N P / N P N y ' J : l > h 7 / y ^ •f >/<— £ K 7 < /''/In ve rter Driver Epitaxial Planar Dual Mini-Mold PNP/NPN Silicon Transistor y — >f — 5 — T

BFR97

Abstract: sgs-ates BSY87 BSY90 1128G BSY88 BFY72 2N1613 2N1711 BSY51
Contextual Info: ITT Semiconductors NPN Transistors N P N Silico n General Purpose Amplifiers and Sw itches Metal can TO-39 V c b o up to 120V. Ic up to 750mA. PTOT” 800m W @ 25'C. O u tlin e D ra w in g N o. 66 ap p lie s. REFEREN CE T A B L E C h a ra c te ristic s @

MARKING P2F

Contextual Info: ON Semiconductort PZT2907AT1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for medium power surface mount

2N915

Abstract: bf 697 bf459 transistor sgs c426 transistor 2n3053 2N2369 2N2369A 2N914 BC119 BSX20
Contextual Info: Fairchild Sem iconductors S e m ic o n d ti^ H n Silicon Small Signal Transistors N P N Silico n H igh Speed Saturated Sw itch in g Transistors M e tal C a n T O IS R EFEREN CE T A B L E For medium speed - see General P u rp o se Section. C H A R A C T E R I S T IC S @ 25"C

Contextual Info: OLE D • bfc.53^31 001420b £ D 'T ~ 3 '3 ~ " N AMER PHILIPS/DISCRETE 86D 01968 BLY93A A V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a supply voltage o f 28 V . The transistor is resistance stabilized. Every tran­

SD 1062 transistor

Abstract: TRANSISTOR b100 D 1062 transistor
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology

MPSH54

Abstract: MPS-H54 455 khz filter MPSH04 MPS-H55 MPSH55 equivalent MPS-H04 MPS-H05 AM radio MPSH05
Contextual Info: MPS-H54 silicon MPS-H55 PNP SILICON TRANSISTORS PNP SILICON ANNULAR TRANSISTORS . . . MPS-H54 is designed for RF am plifier applications in AM receivers. . . . MPS-H55 is designed for mixer, oscillator, autodyne converter, and IF am plifier applications in AM receivers.