D 1047 TRANSISTOR Search Results

Contextual Info: F A IR C H IL D s e m ic o n d u c t o r w w w .fa irc h ild s e m i.c o m tm T D C1047 Monolithic Video A/D C o n v e r te r 7 -B it, 20 M sps Features Description • • • • • • T h e T D C 1047 is a 20 M sps M egasam ple p er second full-parallel (flash) analog-to-digital converter, capable o f

transistor 1548 b

Abstract: transistor 1548 transistor D 1047
Contextual Info: Satellite C om m unications Power Transistor PH 1600-14 14 Watts, 1.55-1.65 GHz Features • • • • • Outline Drawing CW Operation Internal Impedance Matching Common Base Configuration Multilayer Metal / Ceramic Package Gold Metallization System Absolute Maximum Ratings at 25°C

Contextual Info: h 7 > y X $ / T ransistors FMW6 FMW6 NPN '><J = l> h 7 > ' s Z $ iS J l l# lliffl/R F Amplifier Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor vfiilS l/D im e n sio n s Unit : mm Str >4 V ;V v4i ~ r • 1) ^ — >'f — 5— T — JUK ) "j *t — v T '

Contextual Info: SIEMENS BCR 533 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R-|=10k£2, R 2=10ki2 Ordering Code Pin Configuration XCs Q62702-C2382 1=B Package II CO o Marking BCR 533 LU II

Contextual Info: Power Transistor Arrays PU4312 PU4312 Silicon NPN/PNP Epitaxial Planar Type Package Dimensions Power Amplifier, Switching • Features • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEisatj • G ood lin earity o f DC cu rre n t gain (Iife )

Contextual Info: NSL5TT1 Advance Information High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 5 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Symbol Max Unit Collector-Emitter Voltage VCEO

dds25

Abstract: PHP3055
Contextual Info: Philips Semiconductors Objective specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

PU4312

Abstract: 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays P U4312 PU4312 Silicon NPN/PNP Epitaxial Planar Type P a c k a g e D im e n s io n s P o w e r A m p lifier, S w itch in g • F e a tu re s • L ow c o lle c to r-e m itte r s a tu ra tio n v o ltag e VcEtsao • G ood lin earity o f DC c u r re n t gain (Iife )

SD1406

Abstract: SD2058 KSD201 sb1150 SD-1406
Contextual Info: TRANSISTORS FUNCTION GUIDE 2.1.6 T0-220 F Type T ran sisto rs 'c VcEO (A) (V) Device Type V ce NPN 1.5 150 3 55 Condition K SC 3 2 9 6 Condition Hfe lc lc (V) (A) MIN MAX (A) (A) K SA 130 4 10 0.5 40 75 0.5 0.05 K SA 1614 5 0.5 40 240 1 0.1 PNP V CE(sat)(V) Condition

Contextual Info: MMBTA92LT1 Preferred Device High Voltage Transistor PNP Silicon Features • Pb−Free Package May be Available. The G−Suffix Denotes a http://onsemi.com Pb−Free Lead Finish COLLECTOR 3 MAXIMUM RATINGS Symbol MMBTA92 Unit Collector −Emitter Voltage Rating

3713

Contextual Info: 7 ^ 5 3 7 0 0 5 ^ 3 SCS-THOMSON •LEOT «! S 6 b ■ 3 V i3 > 2N3713/14/15/16 2N3789/90/91/92 S-TH0MS0N 30E T> EPITAXIAL-BASE NPN/PNP DESC RIPTIO N The 2N3713, 2N3714, 2N3715 and 2N3716 are si­ licon epitaxial-base NPN power transistors in Jedec TO-3 metal case. They are intended for use in po­

d 1047 transistor

Abstract: transistor 1047 transistor 1047 D transistor 1047 voltage rating T2x TRANSISTOR Switching Transistor
Contextual Info: Philips Semiconductors Product specification NPN switching transistor PMST4401 FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • General purpose switching and linear amplification,

2SK943

Abstract: d 1047 transistor
Contextual Info: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE (L2-7T-MOSm IN D U S T R I A L A P P L I C A T I O N S H IG H S P E E D , H I G H CURRENT SW ITC HIN G A P P L I C A T I O N S . DC-DC C O N V E R T E R ,R E L A Y D R IV E ANO MOTOR D R IV E A P P L I C A T I O N S .

3SK63

Abstract: 3SK63-B LG lcd tv tuner 3sk63 gr transistor 1047 BL 1 S4V toshiba 3sk630r LD10M 3sk63-0r
Contextual Info: 5/ud y N ? v Z i 7 ‘ y i s * / 3 y 7 ‘z j > } \ , jf - h SILICON N-CHANNEL DEPLETION DUAL GATE MOS FIELD EFFECT TRANSISTOR O TV VOT T =.-i- RVMI o VHP TV Tuner a o c H t>î j £ < a o c a # K *• # y -* w : 3rss = ao3pP (Typ.) • • ffi.HiT-i-

2N1047

Abstract: 2N1047B 2N1050B 1049B 2N1050 2n1050a 10S0B 250PA120 2N1049 lc 5012 m
Contextual Info: TYPES 2N1047 THRU 2N1050 2N1047A THRU2N1050A, 2N1047B THRU 2N1050B N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS Sr 3m m vi FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS Z at V CE = 40 V, Tc = O 9 5 • Dissipation Capability in excess of 22 W

TRW tdc

Contextual Info: TRYw TDC1047 Monolithic Video A/D Converter 7-Bit, 2 0 M s p s The T R W TDC1047 is a 2 0M sp s MegaSam ple Per Second] full-parallel (flash analog-to-digltal converter, capable of converting an analog signal w ith full-power Features • 7-Bit Resolution

8060 transistor

Abstract: NT 407 F TRANSISTOR mps 442 0533 OHMITE MPS-H24
Contextual Info: MPS-H24 silicon NPN SILICON VH F TRANSISTOR NPN SILICON EP ITA X IA L TRANSISTOR . . . designed for V H F mixer applications in T V receivers. Excellent Conversion Gain — 24 dB (Typ) Low Collector-Base Capacitance — Ccb = 0.36 pF (Max) High Current-Gain—Bandwidth Product —

BUZ 1045

Abstract: BUZ p channel SIEMENS 3 TB 40 17 - 0A BUZ211 BUZ 385 buz 211
Contextual Info: SIEMENS BUZ 210 BUZ 211 SIPMOS Power MOS Transistors VDS lD ^ D S o n BUZ 384 BUZ 385 = 500 V = 9 . 0 . . . 10.5 A = 0-6 •■• 0.8 Q • N channel • • FREDFET Enhancem ent mode • Packages: T O -2 04 A A (TO-3), T O -2 18 A A (T O P -3)1) Type

HF 331 transistor

Contextual Info: _LL 86D 01952* o o m n o DbE D N AMER PHILIPS/DXSCRETE BLY92A T -3 3 -& 7 D 2 A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and

k 246 transistor fet

Abstract: transistor BD 246 transistor BD 110 d 1047 transistor a 1046 transistor
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device

CTC 1061

Abstract: transistor 2SB815 2SB815 2SB817 2SD1047 2SB832 2SB817 2SD1047
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

3N142

Abstract: ta7306 RCA-3N142 M098 100CC IU 1047 General Electric Solid State rca transistor RCA Solid State Power Transistor
Contextual Info: dT G E SOLID STATE de |3B75D6] i o o m i a i 1 I '11" _ Small-Signal MOSFETs 3875081 G E SOLID STATE 01E 14989 Silicon Insulated-Gate Field-Effect Transistor 3N142 D T - 3 1 *2-s For Industrial and Military Applications to 175 MHz Features: • Large dynamic range

book FOR D 1047

Contextual Info: SPP 80N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f î D S o n • Avalanche rated Continuous drain current b 30 V 0 .0 0 6 Q 80 A • Logic Level • dv/df rated

d 1047 transistor

Abstract: transistor d 1663 AN1043 HP optocoupler 4100 4200 HP 3700 optocoupler HP optocoupler 4200 transistor wm k 1094 transistor AN1004 transistor 1047
Contextual Info: Wm HEW LETT A"KM P A C K A R D Applications The folloiving application inform ation is either published in this catalog or ava ila b le from you r local H eivlett-Packard sales office, authorized distributor, or representative. Application Notes AN 1036 - Small Signal Solid State