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    CZL A6 Search Results

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    MH4M32ANXJ

    Abstract: 464W aatj CZL a6
    Text: MITSUBISHI LS Is <DRAM MODULE FAST PAGE MODE DYNAMIC RAM 4M X 32 I £ O M: 128 BIT Max. Access T ype name Load m em ory tim e O u tw a rd d im e n sio n s Data sheet W X H X D m m ) page (ns) MH4M32AATJ-6 ★ 60 MH4M32AATJ-7 ★ 70 MH4M32AXJ-6 ★ M H4M32ANXJ-6


    OCR Scan     		MH4M32AATJ-6 MH4M32AATJ-7 MH4M32AXJ-6 H4M32ANXJ-6 MH4M32AXJ-7 MH4M32ANXJ-7 17400A 7400A 134217728-BIT MH4M32ANXJ 464W aatj CZL a6 PDF

    A1719

    Abstract: 1m x 8 sram
    Text: "7 05*5 5 ^ . 1M x 8 SRAM DIL MODULE S Y iita q SYS81000FKX-55/70/85/10/12 limited 1,048,576 x 8 CMOS Static RAM Module Issue 2.0 : August 1994 Description j Features ] Access Times of 55/70/85/100/120 ns. 36 Pin JEDEC standard Dual-ln-Line package. The SYS81000FKX is a plastic 8M Static RAM


    OCR Scan     		SYS81000FKX-55/70/85/10/12 SYS81000FKX 120ns YS81OOOFKX-55/7085/10/12 SYS81000FKX LI-10 A1719 1m x 8 sram PDF

    A18 sot

    Abstract: sot-89 Marking GK rtb4 marking sot223 GY RT9161-33CX A9 sot223 AMP marking c7 sot-89 RT9161-18CX RT9161-26CV RT9161-33CV
    Text: RT9161/A 300/500mA Low Dropout Linear Voltage Regulator General Description Features The RT9161/A is a 300/500mA fixed output voltage z Low Dropout Voltage of 200mV at Output low dropout linear regulator. Typical ground current Current 100mA, 450mV at Output Current


    Original     		RT9161/A 300/500mA RT9161/A 200mV 100mA, 450mV 300mA, 750mV 500mA A18 sot sot-89 Marking GK rtb4 marking sot223 GY RT9161-33CX A9 sot223 AMP marking c7 sot-89 RT9161-18CX RT9161-26CV RT9161-33CV PDF

    HY57V164010B

    Abstract: HY57V164010BTC-10 HY57V164010
    Text: - H Y U H O f l l - , H Y 57V 164010B 2 B anks x 2 M x 4 B it S ynchronou s DRAM DESCRIPTION The Hyundai HY57V164010B is a 16, 777, 216-bits CMOS Synchronous DRAM, ideally suited tor the main memory applications which require large memory density and high bandwidth. HY57V164010B is organized as 2banks of


    OCR Scan     		164010B HY57V164010B 216-bits 152x4. HY57V164Q10B 400mil 44pin 1SD30- 0-DEC97 HY57V164010BTC-10 HY57V164010 PDF

    Untitled

    Abstract: No abstract text available
    Text: THI S DRAWING IS UNPUBLISHED. COP YR I G H T 2011 RELEASED FOR PUBLI CATI ON ALL RIGHTS REVISIONS RESERVED. LTR DESCRIPTION DATE DWN APVD [10 R e l e a s e d as per CCR-10-0 05249 10MAR2 0 10 DMK RRP E11 NEW P /N 9 - 1 9 55 5 0 6 -2 AND 0 - 1 9 55 5 0 7 -4 ADDED


    OCR Scan     		CCR-10-0 10MAR2 290CT2010 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CAT28HT256 E x te n d e d T e m p e r a tu r e : 1 7 0 ° C 256K-Bit CMOS E2PR0M FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 10ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive: 30 mA Max.


    OCR Scan     		CAT28HT256 256K-Bit CAT28HT256 28C257 28HT256 CAT28HT256HFNI-20TE7 PDF

    Untitled

    Abstract: No abstract text available
    Text: CAT28C65B 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: - 120/150/200ns ■ Commercial, Industrial and Automotive Tern perature Ranges ■ Low Power CMOS Dissipation: - Active: 25 mA Max. - Standby: 100 fiA Max. ■ Automatic Page Write Operation:


    OCR Scan     		CAT28C65B 64K-Bit 120/150/200ns CAT28C65B 28C65B CAT28C65BHFNI-20TE7 PDF

    SPR128

    Abstract: narrator sp0256 SP0264 DSR 505 MC1316 sp0256b Microchip Speech 35D8 SP025
    Text: SP0264 M icrochip NARRATOR SPEECH PROCESSOR FEATURES DESCRIPTION • Natural speech • On-chlp 64K bit ROM • Stand alone operation with Inexpensive support components • Wide operating voltage • Word, phrase or sentence library, ROM expandable • Directly expandable to a total of 480K ROM


    OCR Scan     		SP0264 SP0256B DS50012C-12 SPR128 narrator sp0256 SP0264 DSR 505 MC1316 Microchip Speech 35D8 SP025 PDF

    a10157

    Abstract: CZL - A8 M28LV16 PDIP28 PLCC32 S028 ZDA10
    Text: S G S -T H O M S O N ^ 7 /» M 28LV17 M [ M S E [ L I ç n ïïM 5 [ iïïD ( S § LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 150ns ■ SINGLE 3 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 8mA


    OCR Scan     		M28LV17 150ns M28LV17 PLCC32 a10157 CZL - A8 M28LV16 PDIP28 PLCC32 S028 ZDA10 PDF

    CZL - A8

    Abstract: No abstract text available
    Text: M IT S U B IS H I LSlS MH25632XJ-7,-8/ MH25632SXJ-7.-8 FAST PAGE MODE 8388608-BIT 262144-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION M H 2 5 6 3 2 X J /S X J is 2 6 2 1 4 4 -word by 3 2 -b it dynamic RAM •nodule. This consists of two industry standard 256K x 16bit


    OCR Scan     		MH25632XJ-7 MH25632SXJ-7 8388608-BIT 262144-WORD 32-BIT 16bit H25632XJ-7 CZL - A8 PDF

    Untitled

    Abstract: No abstract text available
    Text: X X28HC256 256K p r 32K x 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 70ns * Simple Byte and Page Write — Single 5V Supply — No External High Voltages or V p p Control


    OCR Scan     		X28HC256 00Q4h35 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC58V32AFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32 Mbit 4 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V32 device is a single volt 32 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.


    OCR Scan     		TC58V32AFT TC58V32 44/40-P-400-0 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC58V32ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 Mbit 4 M x 8 bit CMOS NAND E2PROM (4M BYTE Sm artM edia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and


    OCR Scan     		TC58V32ADC TC58V32ADC 32MByte FDC-22A PDF

    A22-A13

    Abstract: No abstract text available
    Text: TOSHIBA TC58V64FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V64 device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 1024 blocks.


    OCR Scan     		TC58V64FT TC58V64 44/40-P-400-0 A22-A13 PDF

    SmartMedia Logical Format

    Abstract: TH58V128DC
    Text: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and


    OCR Scan     		TH58V128DC TH58V128DC 32MByte FDC-22C SmartMedia Logical Format PDF

    TH58V128FT

    Abstract: TH58
    Text: TOSHIBA TH58V128FT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 128 Mbit 16 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TH58V128 device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPR O M ) organized as 528 bytes X 32 pages X 1024 blocks.


    OCR Scan     		TH58V128FT TH58V128 TSOPII44 40-P-400-0 TH58V128FT TH58 PDF

    TC58V64DC

    Abstract: SmartMedia Logical Format SmartMedia Logical Format ID maker code
    Text: TOSHIBA TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M x 8 bit CMOS NAND E2PROM (8M BYTE Sm artM edia ) DESCRIPTION The TC58V64DC device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and


    OCR Scan     		TC58V64DC 32MByte FDC-22A SmartMedia Logical Format SmartMedia Logical Format ID maker code PDF

    Untitled

    Abstract: No abstract text available
    Text: Lattice is ;Semiconductor I Corporation L S I3 1 6 0 High Density Programmable Logic Features • HIGH-DENSITY PROGRAMMABLE LOGIC — 160 I/O Pins — 7000 PLD Gates — 320 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State


    OCR Scan     		PDF

    A6W 76

    Abstract: 99LSB
    Text: JULY 3,1996 TEST REPORT #96032 QUALIFICATION TESTING PART NUMBER TSM-125-Ol-F-DV CLH-125-L-D-DV CERTIFICATION This is to certify that the evaluation described herein was designed and executed by personnel of Contech Research, Inc. It was performed with the concurrence of Samtec Corporation


    Original     		TSM-125-Ol-F-DV CLH-125-L-D-DV 10012-l CLH-125-L-D-DV A6W 76 99LSB PDF

    MR 4710 IC

    Abstract: KL SN 102 lcd MR 4710 ks 4290 317 jrc SAA 1350 LM 1405 1470 LM jrc 317 IC JRC 2910
    Text: NJU6679 128 = J ^ E > x If V •m b "? 1 3 2 - iz ^ 'y 3? L C D æ > h /< ■ n NJU6679 i t . 128^> x 132-ttf* m ? h7?7’ LCDT 7 ^ * t t 0 COLCDh* 7ÏA* lis 25, 344tf îih 7 Â^f* -$RAM. CPU<i>*-7i<iJl[I&, i'A - V i i t f f P T ? 1 8 j £ £ f r W ifrj/W


    OCR Scan     		NJU6679 132-fe J283t -ToNJU6679 NJU6679 SEL68Vdd MR 4710 IC KL SN 102 lcd MR 4710 ks 4290 317 jrc SAA 1350 LM 1405 1470 LM jrc 317 IC JRC 2910 PDF

    10 HP CAPACITOR START SINGLE PHASE motor WIRING DIAGRAM

    Abstract: 50387-001 1 HP SINGLE PHASE induction motor wiring diagram klixon start relay motor transistor 431A Allen-Bradley 1388 KLIXON Thermal Overload Relay B7 3 hp 1500 rpm a.c. induction motor winding data TRANSISTOR 1FU ac induction motor direct torque control using fu
    Text: ALLEN-BRADLEY A R D C K W E L L IN T E R N A T IO N A L C O M P A N Y Instruction Manual Bulletin 1334 15 thru 50 HP 575V Adjustable Frequency A C Motor Drives P rice: $2 Important User Information Because of the variety of uses for this equipm ent and because of the


    OCR Scan     		20i407-040 10 HP CAPACITOR START SINGLE PHASE motor WIRING DIAGRAM 50387-001 1 HP SINGLE PHASE induction motor wiring diagram klixon start relay motor transistor 431A Allen-Bradley 1388 KLIXON Thermal Overload Relay B7 3 hp 1500 rpm a.c. induction motor winding data TRANSISTOR 1FU ac induction motor direct torque control using fu PDF

    buzzer obo

    Abstract: HD4074719H PKW-3100 R90-R93 441L204
    Text: H D 4 0 4 7 1 0 S e rie s Description The HD404710 Series 4-bit single-chip microcom­ puters incorporate five timers, two serial interfaces, an A/D converter, an input capture timer, and an output compare timer. They also include a 32.768kH z oscillator and low-power dissipation modes.


    OCR Scan     		HD404710 768kHz HD4074710 HD404719 HD4074719, 384-word buzzer obo HD4074719H PKW-3100 R90-R93 441L204 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 1997 m icroelectronics group Lucent Technologies Bell Labs Innovations LUC3M08 Eight Ethernet MACs for 10/100 Mbits/s Frame Switching Features • Eight 10/100 Mbits/s Ethernet MACs integrated together with separate transmit and receive port


    OCR Scan     		LUC3M08 10Base-T, 100Base-T4, 64-bit, DS96-124LAN PDF

    AC125K

    Abstract: 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram
    Text: TUNGSRAM 1 ELECTRON TUBES AND SEMI­ CONDUCTORS 1979 RADIO & TV RECEIVING TUBES OSCILLOSCOPE & MONITOR TUBES TRANSMITTING TUBES, RECTIFIERS & MICROWAVE TUBES SEMICONDUCTORS RECEIVING TUBES CONSUMER TYPES INDUSTRIAL TYPES VOLTAGE REGULATORS TY P E ASSO R TM EN T


    OCR Scan     		76665N 76889N MA748PC MA709PC jA710PC A711PC iA712PC A723PC HA741PC A747PC AC125K 6AN7 tungsram 3S035T-1 ecc83 application notes ECL86 DG 7-123 tungsram AC125UZ PENTODE pl 508 ot-400 tungsram PDF