CZL - A8
Abstract: A9 sot223 MARKING 7A SOT89 A9 SOT-89 L3 SOT223 MARKING SOT-89 RT9163-33CX RT9163-33CXL RT9163-33CZL RT9163-35CX
Text: RT9163 500mA Low Dropout Positive Voltage Regulator General Description Features The RT9163 is a positive low dropout regulator z Low Dropout, Maximum 1.4V at 500mA designed for applications requiring low dropout z Fast Transient Response performance at full rated current. The device is
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RT9163
500mA
RT9163
500mA
OT-89,
OT-223,
O-252
500mA,
OT-223
CZL - A8
A9 sot223
MARKING 7A SOT89
A9 SOT-89
L3 SOT223 MARKING
SOT-89
RT9163-33CX
RT9163-33CXL
RT9163-33CZL
RT9163-35CX
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A1719
Abstract: 1m x 8 sram
Text: "7 05*5 5 ^ . 1M x 8 SRAM DIL MODULE S Y iita q SYS81000FKX-55/70/85/10/12 limited 1,048,576 x 8 CMOS Static RAM Module Issue 2.0 : August 1994 Description j Features ] Access Times of 55/70/85/100/120 ns. 36 Pin JEDEC standard Dual-ln-Line package. The SYS81000FKX is a plastic 8M Static RAM
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SYS81000FKX-55/70/85/10/12
SYS81000FKX
120ns
YS81OOOFKX-55/7085/10/12
SYS81000FKX
LI-10
A1719
1m x 8 sram
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A18 sot
Abstract: sot-89 Marking GK rtb4 marking sot223 GY RT9161-33CX A9 sot223 AMP marking c7 sot-89 RT9161-18CX RT9161-26CV RT9161-33CV
Text: RT9161/A 300/500mA Low Dropout Linear Voltage Regulator General Description Features The RT9161/A is a 300/500mA fixed output voltage z Low Dropout Voltage of 200mV at Output low dropout linear regulator. Typical ground current Current 100mA, 450mV at Output Current
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RT9161/A
300/500mA
RT9161/A
200mV
100mA,
450mV
300mA,
750mV
500mA
A18 sot
sot-89 Marking GK
rtb4
marking sot223 GY
RT9161-33CX
A9 sot223
AMP marking c7 sot-89
RT9161-18CX
RT9161-26CV
RT9161-33CV
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Untitled
Abstract: No abstract text available
Text: Preliminary CAT28HT256 E x te n d e d T e m p e r a tu r e : 1 7 0 ° C 256K-Bit CMOS E2PR0M FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 10ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive: 30 mA Max.
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CAT28HT256
256K-Bit
CAT28HT256
28C257
28HT256
CAT28HT256HFNI-20TE7
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Untitled
Abstract: No abstract text available
Text: CAT28C65B 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: - 120/150/200ns ■ Commercial, Industrial and Automotive Tern perature Ranges ■ Low Power CMOS Dissipation: - Active: 25 mA Max. - Standby: 100 fiA Max. ■ Automatic Page Write Operation:
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CAT28C65B
64K-Bit
120/150/200ns
CAT28C65B
28C65B
CAT28C65BHFNI-20TE7
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SPR128
Abstract: narrator sp0256 SP0264 DSR 505 MC1316 sp0256b Microchip Speech 35D8 SP025
Text: SP0264 M icrochip NARRATOR SPEECH PROCESSOR FEATURES DESCRIPTION • Natural speech • On-chlp 64K bit ROM • Stand alone operation with Inexpensive support components • Wide operating voltage • Word, phrase or sentence library, ROM expandable • Directly expandable to a total of 480K ROM
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SP0264
SP0256B
DS50012C-12
SPR128
narrator
sp0256
SP0264
DSR 505
MC1316
Microchip Speech
35D8
SP025
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a10157
Abstract: CZL - A8 M28LV16 PDIP28 PLCC32 S028 ZDA10
Text: S G S -T H O M S O N ^ 7 /» M 28LV17 M [ M S E [ L I ç n ïïM 5 [ iïïD ( S § LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 150ns ■ SINGLE 3 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 8mA
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M28LV17
150ns
M28LV17
PLCC32
a10157
CZL - A8
M28LV16
PDIP28
PLCC32
S028
ZDA10
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CZL - A8
Abstract: No abstract text available
Text: M IT S U B IS H I LSlS MH25632XJ-7,-8/ MH25632SXJ-7.-8 FAST PAGE MODE 8388608-BIT 262144-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION M H 2 5 6 3 2 X J /S X J is 2 6 2 1 4 4 -word by 3 2 -b it dynamic RAM •nodule. This consists of two industry standard 256K x 16bit
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MH25632XJ-7
MH25632SXJ-7
8388608-BIT
262144-WORD
32-BIT
16bit
H25632XJ-7
CZL - A8
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44c256
Abstract: KM44C256 KM44C256CSL-7 KM44C256CSL-8 18 pins KM44C256
Text: SAMSUNG E L E C TRONICS INC b?E D • 71^142 KM44C256CSL O O I S M 1^ TER SUGK CM OS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION » Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its
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KM44C256CSL
256Kx4
44C256CS
110ns
KM44C256CSL-7
130ns
KM44C256CSL-8
150ns
100fiA
cycle/128ms
44c256
KM44C256
18 pins KM44C256
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V32AFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32 Mbit 4 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V32 device is a single volt 32 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.
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TC58V32AFT
TC58V32
44/40-P-400-0
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC58V32ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 Mbit 4 M x 8 bit CMOS NAND E2PROM (4M BYTE Sm artM edia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and
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TC58V32ADC
TC58V32ADC
32MByte
FDC-22A
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A22-A13
Abstract: No abstract text available
Text: TOSHIBA TC58V64FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V64 device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 1024 blocks.
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TC58V64FT
TC58V64
44/40-P-400-0
A22-A13
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upa64
Abstract: UPA128 STP221
Text: S un M icroelectronics July 1997 u se Uniprocessor System Controller DATA SHEET D e s c r ip t io n The Uniprocessor System Controller USC has a DRAM memory controller and functions to regulate the flow of requests and data on the UPA bus. It also controls the resets going to all UPA clients.
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SS-10/SS-20-type
128-MB
225-pin
STP2200ABGA-83
STP2200ABGA-100
upa64
UPA128
STP221
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SmartMedia Logical Format
Abstract: TH58V128DC
Text: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and
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TH58V128DC
TH58V128DC
32MByte
FDC-22C
SmartMedia Logical Format
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TC58V64DC
Abstract: SmartMedia Logical Format SmartMedia Logical Format ID maker code
Text: TOSHIBA TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M x 8 bit CMOS NAND E2PROM (8M BYTE Sm artM edia ) DESCRIPTION The TC58V64DC device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and
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TC58V64DC
32MByte
FDC-22A
SmartMedia Logical Format
SmartMedia Logical Format ID maker code
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Untitled
Abstract: No abstract text available
Text: Lattice is ;Semiconductor I Corporation L S I3 1 6 0 High Density Programmable Logic Features • HIGH-DENSITY PROGRAMMABLE LOGIC — 160 I/O Pins — 7000 PLD Gates — 320 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State
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RDRAM Clock
Abstract: RR15
Text: Direct RDRAM 64/72-Mbit 256Kx16/18x16d SIEM EN S O I ADVANCE INFORMATION Overview n Uses R am bus Signaling Level (RSL) for up to 800MHz operation Preliminary Data The R am bus Direct RDRAM™ is a general p u rp o se high-perform ance m em ory device suitable for u se in a
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64/72-Mbit
256Kx16/18x16d)
800MHz
/72-Mbit
600MHz
RDRAM Clock
RR15
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet July 1997 m icroelectronics group Lucent Technologies Bell Labs Innovations LUC3M08 Eight Ethernet MACs for 10/100 Mbits/s Frame Switching Features • Eight 10/100 Mbits/s Ethernet MACs integrated together with separate transmit and receive port
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LUC3M08
10Base-T,
100Base-T4,
64-bit,
DS96-124LAN
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atmel sine wave pwm circuit atmega 128
Abstract: SP12 SP13 SP14 SP15 pwm atmega 16 input id atmegal 8 036AC
Text: Features • Utilizes the AVR RISC Architecture • AVR - High-performance and Low-power RISC Architecture - 120/121 Powerful Instructions - Most Single Clock Cycle Execution - 32 x 8 General Purpose Working Registers + Peripheral Control Registers - Up to 6 MIPS Throughput at 6 MHz
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64K/128K
0945Dâ
06/99/xM
atmel sine wave pwm circuit atmega 128
SP12
SP13
SP14
SP15
pwm atmega 16 input id
atmegal 8
036AC
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Untitled
Abstract: No abstract text available
Text: Features • Utilizes the AVR RISC Architecture • AVR - High-performance and Low-power RISC Architecture - 120/121 Powerful Instructions - Most Single Clock Cycle Execution - 32 x 8 General Purpose Working Registers + Peripheral Control Registers - Up to 6 MIPS Throughput at 6 MHz
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64K/128K
0945Dâ
06/99/xM
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TMP93CM41F
Abstract: UPR resistor TMP9eCM041 ADS36A TMP93CM40 Analog Devices 2S20 FC-732
Text: TOSHIBA TLCS-900 Series TMP93CM40/TMP93CM41 Low Voltage/Low Power 4 External memory expansion CMOS 16-bit Microcontrollers • Can be expanded up to 16M bytes (for both programs and data). TMP93CM40F/TMP93CM41F • AM 8/16 pin (select the external data bus width).
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TLCS-900
16-bit
TMP93CM40F/TMP93CM41F
TMP93CM40/TMP93CM41
10-bit
8000H
18000H
TMP93CM41F
UPR resistor
TMP9eCM041
ADS36A
TMP93CM40
Analog Devices 2S20
FC-732
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PDF
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Untitled
Abstract: No abstract text available
Text: m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations ORCA OR2CxxA 5.0 V and OR2TxxA (3.3 V) Series Series Field-Programmable Gate Arrays Features 2 • Flip-flop/latch options to allow programmable prior ity of synchronous set/reset vs. clock enable
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OR2C/2T26A
OR2C/2T40A
240-Pin
256-Pin
304-Pin
352-Pin
432-Pin
600-Pin
OR2C/2T15A,
OR2C/2T26A
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CXD1255Q
Abstract: cxa1337 cx-7925b sony frequency synthesizer pll ILX501 lhi 778 cn/A/U 237 BG CXD1149 Semicon volume 1 IU02 icx024
Text: Semiconductor IC Semiconductor Integrated Circuit Data Book 1992 List of Model Names/ Index by Usage Description CCD Image Sensor Color CCD Image Sensor (Black/White) CCD Image Sensor System Scanning System IC for Video Camera Signal Processing IC for Video
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DE91Z22-HP
CXD1255Q
cxa1337
cx-7925b sony frequency synthesizer pll
ILX501
lhi 778
cn/A/U 237 BG
CXD1149
Semicon volume 1
IU02
icx024
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DM74367
Abstract: 54175 71ls97 DM74109 DM8160 om541 ci 8602 gn block diagram 5401 DM transistor 74L10 74S136
Text: N ational Semiconductor Section 1 - 54/74 SSI DEVICES Connection Diagram s • Electrical Tables Section 2 - 54/74 M SI DEVICES Section 3 - National Semiconductor PROPRIETARY DEVICES Section 4 - National Semiconductor ADDITIONAL D EV KES t o NATIONAL Manufactured under one or more of the fo llowing U.S. patents: 3083262, 3189758, 3231797 , 3303356, 3317671, 3323071, 3381071, 3408542, 3421025, 3426423, 3440498, 3518750, 3519897, 3557431, 3560765,
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