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    CY7C266 Price and Stock

    Rochester Electronics LLC CY7C2668KV18-550BZC

    QDR SRAM, 4MX36, 0.45NS PBGA165
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C2668KV18-550BZC Bulk 107 1
    • 1 $360.56
    • 10 $360.56
    • 100 $360.56
    • 1000 $360.56
    • 10000 $360.56
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    Rochester Electronics LLC CY7C2665KV18-550BZXI

    IC SRAM 144MBIT PAR 165FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C2665KV18-550BZXI Bulk 84 1
    • 1 $442.67
    • 10 $442.67
    • 100 $442.67
    • 1000 $442.67
    • 10000 $442.67
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    Rochester Electronics LLC CY7C2668KV18-500BZC

    QDR SRAM, 4MX36, 0.45NS PBGA165
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C2668KV18-500BZC Bulk 36 1
    • 1 $360.56
    • 10 $360.56
    • 100 $360.56
    • 1000 $360.56
    • 10000 $360.56
    		Buy Now

    Rochester Electronics LLC CY7C2663KV18-450BZXC

    IC SRAM 144MBIT PAR 165FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C2663KV18-450BZXC Bulk 33 1
    • 1 $376.1
    • 10 $376.1
    • 100 $376.1
    • 1000 $376.1
    • 10000 $376.1
    		Buy Now

    Rochester Electronics LLC CY7C2663KV18-550BZXC

    IC SRAM 144MBIT PAR 165FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY7C2663KV18-550BZXC Bulk 24 1
    • 1 $442.67
    • 10 $442.67
    • 100 $442.67
    • 1000 $442.67
    • 10000 $442.67
    		Buy Now
    Find more CY7C266 price and stock on Findchips.com

    CY7C266 Datasheets (104)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C266 Cypress Semiconductor 8Kx8 Power-Switched and Reprogrammable PROM Original PDF
    CY7C266 Cypress Semiconductor 8Kx8 Power-Switched and Reprogrammable PROM Original PDF
    CY7C266 Cypress Semiconductor 8Kx8 Power-Switched and Reprogrammable PROM Original PDF
    CY7C266-20DC Cypress Semiconductor 8Kx8 Power-Switched and Reprogrammable PROM Original PDF
    CY7C266-20DC Cypress Semiconductor 8192 x 8 PROM Power Switched and Reprogrammable Scan PDF
    CY7C266-20JC Cypress Semiconductor 8Kx8 Power-Switched and Reprogrammable PROM Original PDF
    CY7C266-20PC Cypress Semiconductor 8K x 8 Power-Switched and Reprogrammable PROM Original PDF
    CY7C266-20PC Cypress Semiconductor 8K x 8 Power-Switched and Reprogrammable PROM Scan PDF
    CY7C266-20PC Cypress Semiconductor 8K x 8 Power-Switched and Reprogrammable PROM Scan PDF
    CY7C266-20PC Cypress Semiconductor 8192 x 8 PROM Power Switched and Reprogrammable Scan PDF
    CY7C266-20WC Cypress Semiconductor 8K x 8 Power-Switched and Reprogrammable PROM Original PDF
    CY7C266-20WC Cypress Semiconductor 8Kx8 Power-Switched and Reprogrammable PROM Original PDF
    CY7C266-20WC Cypress Semiconductor 8K x 8 Power-Switched and Reprogrammable PROM Scan PDF
    CY7C266-20WC Cypress Semiconductor 8K x 8 Power-Switched and Reprogrammable PROM Scan PDF
    CY7C266-20WC Cypress Semiconductor 8192 x 8 PROM Power Switched and Reprogrammable Scan PDF
    CY7C266-25DC Cypress Semiconductor 8Kx8 Power-Switched and Reprogrammable PROM Original PDF
    CY7C266-25DC Cypress Semiconductor 8192 x 8 PROM Power Switched and Reprogrammable Scan PDF
    CY7C266-25DMB Cypress Semiconductor 8K x 8 Power-Switched and Reprogrammable PROM Original PDF
    CY7C266-25DMB Cypress Semiconductor 8K x 8 Power-Switched and Reprogrammable PROM Scan PDF
    CY7C266-25DMB Cypress Semiconductor 8K x 8 Power-Switched and Reprogrammable PROM Scan PDF

    CY7C266 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    C2665

    Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
    Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)


    Original     		CY7C266 CY7C266 600-mil-wide C2665 C2668 7c26 C2662 C266 27C64 R1250 C2666 PDF

    CY7C2663KV18

    Abstract: CY7C2665KV18 3M Touch Systems CY7C2663KV18-450BZXC
    Text: CY7C2663KV18, CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports


    Original     		CY7C2663KV18, CY7C2665KV18 144-Mbit 550-MHz CY7C2663KV18: CY7C2665KV18: CY7C2663KV18 CY7C2665KV18 3M Touch Systems CY7C2663KV18-450BZXC PDF

    LC 7258

    Abstract: 7C266 203CE
    Text: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)


    OCR Scan     		CY7C266 CY7C266 32-Pin 28-Lead 600-Mil) LC 7258 7C266 203CE PDF

    27C64

    Abstract: CY7C266 R1250 direct replacement
    Text: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) The CY7C266 is a high-performance 8192 word by 8 bit


    Original     		CY7C266 CY7C266 600-mil-wide 27C64 R1250 direct replacement PDF

    LC 7258

    Abstract: AG04
    Text: ^ CY7C266 SEMICONDUCTOR 8K x 8 PROM PowerSwitched and Reprogrammable Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)


    OCR Scan     		CY7C266 7C266 32-Pin 600-M LC 7258 AG04 PDF

    27C64

    Abstract: CY7C266 R1250 8kx8 eprom pin diagram
    Text: CY7C266 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM


    Original     		1CY7C266 CY7C266 600-mil-wide CY7C266 27C64 R1250 8kx8 eprom pin diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically powers down into a low-power standby mode. It is packaged


    OCR Scan     		CY7C266 CY7C266 600-mil-wide PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM


    Original     		CY7C266 27C64 600-mil-wide CY7C266 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C2663KV18/CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports


    Original     		CY7C2663KV18/CY7C2665KV18 144-Mbit 550-MHz PDF

    p20d

    Abstract: CERPAK data retention eprom Cypress 7c26 CY7C261 CY7C263 CY7C264 CY7C266 CY7C269 EME-6300H
    Text: Qualification Report March, 1992 QTP 91296 Version 1.0 64K EPROM FAMILY, 0.8µ MARKETING PART NUMBER DEVICE DESCRIPTION CY7C261 8K x 8 POWER-SWITCHED CY7C263 8K x 8 CY7C264 8K x 8 600-MIL PKG CY7C266 8K x 8 POWER-SWITCHED EPROM PINOUT CY7C269 8K x 8 REGISTERED DIAGNOSTIC


    Original     		CY7C261 CY7C263 CY7C264 600-MIL CY7C266 CY7C269 QTP90271 p20d CERPAK data retention eprom Cypress 7c26 CY7C261 CY7C263 CY7C264 CY7C266 CY7C269 EME-6300H PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 mW (military) • Super low standby power — Less than 85 mW when deselected


    OCR Scan     		CY7C266 27C64 7C266 600-mil-wide 600-M 32-Pin 7C266 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C2663KV18/CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports


    Original     		CY7C2663KV18/CY7C2665KV18 144-Mbit 550-MHz PDF

    3M Touch Systems

    Abstract: CY7C2663KV18-450BZXC
    Text: CY7C2663KV18, CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports


    Original     		CY7C2663KV18, CY7C2665KV18 144-Mbit 550-MHz CY7C2663KV18: CY7C2665KV18: 3M Touch Systems CY7C2663KV18-450BZXC PDF

    Untitled

    Abstract: No abstract text available
    Text: _ CY7C266 c y p p f^ s = W SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammablUty • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial) — 770 mW (military)


    OCR Scan     		CY7C266 CY7C266 7C266 --55W PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 PRELIM INARY CYPRESS SEMICONDUCTOR 8192 x 8 PROM Power Switched and Reprogrammable Features • CMOS for optimum speed/power • Direct replacement for EPROMs • Windowed for reprogrammability • Capable of withstanding > 2000V static discharge • High speed


    OCR Scan     		CY7C266 266-55PC 66-55W 266-55D 266-55LM 7C266-55Q PDF

    Untitled

    Abstract: No abstract text available
    Text: _ CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • C M O S fo r o p tim u m sp ee d /p o w e r T he C Y 7C 266 is a hig h -p e rfo rm a n ce 8192 w o rd by 8 bit C M O S PRO M . W hen de selected , th e C Y 7C 266 a u to m a tica lly


    OCR Scan     		CY7C266 PDF

    C266

    Abstract: P15 Package 27C64 CY7C266 R1250 8kx8 eprom pin diagram
    Text: ,.V.Ï .Ï .V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically


    OCR Scan     		CY7C266 27C64 CY7C266 600-mil-wide C266 P15 Package R1250 8kx8 eprom pin diagram PDF

    Untitled

    Abstract: No abstract text available
    Text: CY7C266 ^ 0 CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TT L -com patible I/O • CMOS for optimum speed/power • D irect replacem ent for 27C64 E PR O M s • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)


    OCR Scan     		CY7C266 266-35PC 266-45PC CY7C266-- 266-45D 7C266-- 45LMB 266-45Q PDF

    27C64

    Abstract: CY7C266 R1250 LP 06 A4 A1 AA
    Text: ,.V.Ï.Ï.V.^ y nr' Æ CY7C266 CYPRESS 8Kx8 Power-Switched and Reprogrammable PROM Functional Description Features • CMOS fo r optimum speed/power • Windowed for reprogramm ability • High speed The CY7C266 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY7C266 automatically


    OCR Scan     		CY7C266 27C64 600-mil-wide R1250 LP 06 A4 A1 AA PDF

    Untitled

    Abstract: No abstract text available
    Text: 66 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages are equipped with an erasure window; when exposed to UV light, these PROMs are erased and can then be reprogrammed. The memory cells utilize proven EPROM


    Original     		CY7C266 600-mil-wide CY7C266 PDF

    3M Touch Systems

    Abstract: CY7C2663KV18-450BZXC
    Text: CY7C2663KV18, CY7C2665KV18 144-Mbit QDR II+ SRAM Four-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports


    Original     		CY7C2663KV18, CY7C2665KV18 144-Mbit 550-MHz CY7C2663KV18: CY7C2665KV18: 3M Touch Systems CY7C2663KV18-450BZXC PDF

    3M Touch Systems

    Abstract: No abstract text available
    Text: CY7C2666KV18, CY7C2677KV18 CY7C2668KV18, CY7C2670KV18 144-Mbit DDR II+ SRAM 2-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit DDR II+ SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations • 144-Mbit density (16 M x 8, 16 M × 9, 8 M × 18, 4 M × 36)


    Original     		CY7C2666KV18, CY7C2677KV18 CY7C2668KV18, CY7C2670KV18 144-Mbit CY7C2666KV18 CY7C2677KV18 CY7C2668KV18 3M Touch Systems PDF

    3M Touch Systems

    Abstract: CY7C2663KV18-450BZXC
    Text: CY7C2661KV18, CY7C2676KV18 CY7C2663KV18, CY7C2665KV18 144-Mbit QDR II+ SRAM 4-Word Burst Architecture 2.5 Cycle Read Latency with ODT 144-Mbit QDR ® II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency) with ODT Features Configurations Separate independent read and write data ports


    Original     		144-Mbit CY7C2661KV18, CY7C2676KV18 CY7C2663KV18, CY7C2665KV18 550-MHz CY7C2661KV18: CY7C2676KV18: CY7C2663KV18: 3M Touch Systems CY7C2663KV18-450BZXC PDF

    333Q

    Abstract: 27C64 CY7C266 a50tb
    Text: CY7C266 5 f C Y PR ESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Direct replacement for 27C64


    OCR Scan     		CY7C266 27C64 CY7C266 600-mil-wide 45LMB 32-Pin CY7C266â 45QMB 333Q a50tb PDF