CY7C168 Search Results

C1663

Abstract: ci685 7C168 CY7C169 016A6 CY7C168 c16s1 cypress jib 4096X4
Contextual Info: MbE D ssfl^bbs Doobso? a cacYP CY7C168 CY7C169 ^ L / 4- i V O â •*î ^ Features a ’c y pr e ss SEMICONDUCTOR Functional Description Automatic power-down when dese­ lected 7C168 CMOS for optimum speed/power High speed — tAA = 25 ns — tACE = lSns(7C169)

7C168A

Abstract: CY7C168A CY7C169A 7C168 CY7C168A-25LMB
Contextual Info: CYPRESS SEM ICOND UC TO R MhE D ^ B 250^2 GODbSlM 5 O C V P ,7 ^ CY7C168A CY7C169A <VH 'V? -O 2> CYPRESS SEMICONDUCTOR Features Automatic pow er-dow n when dese­ lected 7C168A CMOS for optimum speed/power High speed — U a = 15 n s — tACE = 10ns(7C169A)

4kx4 ram

Abstract: CY7C168A 7C168A 7C168A-45
Contextual Info: CY7C168A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Low active power — 633 mW • Low standby power — 110 mW • TTL-compatible inputs and outputs

7c169A

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • Highspeed — tAA = 15 ns — tACE = l« n s (7C169A) • Low active power — 385 mW • Low standby power (7C168)

CY7C169

Contextual Info: CY7C168 CY7C169 CYPRESS SEMICONDUCTOR 4096 x 4 Static RAM Features Functional D escription • A u to m atic pow er-dow n w hen dese­ lected 7C168 T he CY7C168 and CY7C169 are high-performance CMOS static RAM s organized as 4096 by 4 bits. Easy memory expansion

CY7C128A SRAM

Abstract: 256K x 8 SRAM CY7C128A SRAM CY7C128A CY7C167A CY7C168A CY7C169A CY7C170A CY7C171A CY7C172A EME-6300H
Contextual Info: Qualification Report December, 1994, QTP# 94065 Version 1.0 16K SRAM, 7% SHRINK, R21 TECHNOLOGY MARKETING PART NUMBER DEVICE DESCRIPTION CY7C128A 2K x 8 Static R/W RAM CY7C167A 16K x 1 Static R/W RAM CY7C168A 4K x 4 Static RAM CY7C169A 4K x 4 Static RAM CY7C170A

7C168A

Abstract: CY7C168A CY7C169A 7C169
Contextual Info: CY7C168A CY7C169A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected 7C168A • CMOS for optimum speed/power • High speed — tAA = 15 ns — tACE = 10 ns (7C169A) • Low active power — 385 mW • Low standby power (7C168A)

7C168A

Abstract: CY7C168A CY7C168A-20VC
Contextual Info: 69A CY7C168A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Low active power — 633 mW • Low standby power — 110 mW • TTL-compatible inputs and outputs

Contextual Info: 02547^3 DODQQSb 5 • 1SE D ADVANCED ELECTRONIC ~ Z $ -O S. CY7C168 CY7C169 CYPRESS SEMICONDUCTOR 4096 x 4 Static R/W RAM Features • Automatic power-down when deselected 7C16S • CM OS for optimum speed/ power • High Speed — 25 n* Iaa — 15 ns tACE (7C169)

EPM5128LC

Abstract: IDT CYPRESS CROSS REFERENCE clocks epm5064lc-1 EPM5128LC-1 EPM5064LC EPM5128LC-2 EPM5128GI EPM5128JC-1 8464c 5962-8871309
Contextual Info: Product Line Cross Reference CYPRESS CYPRESS CYPRESS CYPRESS CYPRESS CY2148-35C CY21L48-35C CY7C168A-35C CY7C168A-25C 5962-8871309XX 5962-89839112X CY2148-35C CY7C148-35C CY7C168A-45M CY7C168A-35M+ 5962-8871310RX 5962-8983913RX CY2148-35M CY7C148-35M CY7C169A-35C

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features • Automatic power—down when dese­ lected 7C168A • CMOS for optimum speed/power • H ighspeed — 1 \ \ = 15 ns — t A C E = 10ns(7C 169A ) • Low active power — 385 mW • Low standby power (7C168)

Contextual Info: CY7C168 CY7C169 CYPRESS SEMICONDUCTOR Features Functional Description • Automatic power-down when dese­ lected 7C16S • CMOS for optimum speed/power • Highspeed — tAA = 25 ns — tACE = IS ns (7C169) • Low active power — 385 mW • Low standby power (7C168)

7C168A-20

Contextual Info: CY7C168A 4 K x 4 RAM 4 K × 4 RAM Features Functional Description • Automatic power-down when deselected ■ Complementary metal oxide semiconductor CMOS for optimum speed/power ■ High speed ❐ tAA = 20 ns The CY7C168A is a high-performance CMOS static RAM

ATT7C170P

Abstract: att7c168 ATT7C168J12 ATT7C170
Contextual Info: HHAT&T Data Sheet January 1992 ATT7C168 ATT7C170 Microelectronics High-Speed CMOS SRAM 16 Kbits 4K x 4 , Common I/O Features • High speed — 10 ns maximum access time ■ Plug-compatible with IDT6168 and CY7C168/170 ■ Output enable (ATT7C170 only) ■ Low-power operation

CY7C168A-45DMB

Abstract: 7C168A CY7C168A CY7C169A
Contextual Info: 1CY 7C16 9A CY7C168A CY7C169A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected 7C168A • CMOS for optimum speed/power • High speed — tAA = 15 ns — tACE = 10 ns (7C169A) • Low active power — 385 mW • Low standby power (7C168A)

7C168A

Abstract: CY7C168A CY7C169A
Contextual Info: CY7C168A CY7C169A ’= C Y P R ESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional Description • Automatic power-down when dese­ lected (CY7C168A • CMOS for optimum speed/power • High speed The CY7C168A and CY7C169A are high­

Contextual Info: ìf CY7C168A CY7C169A CYPRESS 4K x 4 Static RAM Features Functional Description • Automatic power-down when dese­ lected CY7C168A T he CY7C168A and CY7C169A are highperform ance CM O S static RA M s orga­ nized as 4096 by 4 bits. Easy m em ory ex­ pansion isprovidedby an active LO W chip

7C168A

Abstract: CY7C168A CY7C169A
Contextual Info: CY7C168A CY7C169A ’= CYPRESS 4K x 4 Static RAM specified on the address pins Ao through Features Functional Description • Automatic power-down when dese­ lected (CY7C168A • CMOS for optimum speed/power • High speed The CY7C168A and CY7C169A are highperformance CMOS static RAMs orga­

CY7C168-35PC

Abstract: 7C169 7C169-25 7C168 CY7C168-45DMB
Contextual Info: CY7C168 CY7C169 s? r/ SEMICONDUCTOR 4096 x 4 Static RAM Features Functional Description • Automatic power-down when dese­ lected 7C168 • CMOS for optimum speed/power • High speed — ìaa = 25 ns - t ACE = 15 ns (7C169) The CY7C168 and CY7C169 arc high-per­

4k x 4 ram

Abstract: 7C168A CY7C168A
Contextual Info: 69A CY7C168A 4Kx4 RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — tAA = 15 ns • Low active power — 633 mW • Low standby power — 110 mW • TTL-compatible inputs and outputs

4SCE

Contextual Info: CY7C168A CY7C169A CYPRESS SEMICONDUCTOR Features Automatic power-down when dese­ lected 7C168A CMOS for optimum speed/power High speed — ìaa = 15 ns — »ACE = 10 ns (7CI69A) Low active power — 385 mW Low standby power (7C168) — 83 mW TTL-compatible inputs and outputs

7C168A

Abstract: CY7C168A CY7C169A
Contextual Info: CY7C168A CY7C169A 4K x 4 RAM Features D The CY7C168A and CY7C169A are highĆ performance CMOS static RAMs orgaĆ nized as 4096 by 4 bits. Easy memory exĆ pansion is provided by an active LOW chip enable CE and threeĆstate drivers. The CY7C168A has an automatic powerĆdown

CY7C

Abstract: LED1014 168A4
Contextual Info: CY7C168A CY7C169A 4Kx4 RAM Features Functional Description • A utom atic power-down when deselected 7C168A • CMOS fo r optim um speed/power • High speed — tAA = 1 5 n s — tACE = 10 ns (7C169A) • Low active power — 385 mW The CY7C168A and CY7C169A are high-performance CMOS

Contextual Info: CY7C168A CY7C169A f^ Y P D T T C C 4K x 4 R/W RAM SEMICONDUCTOR Features • Automatic power-down when dese­ lected 7C168A • Capable o f w ithstanding greater than 2001V electrostatic discharge is w ritten into the m em ory location speci­ fied on the address pins (Ao through A n ).