CY7C106B Search Results

C106B4

Abstract: C106B CY7C1006B CY7C106B c106b1 equivalent
Contextual Info: 006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

CY7C1006D

Abstract: CY7C106D CY7C106D-10VXI 7C106D
Contextual Info: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

Contextual Info: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

C106B

Abstract: CY7C1006B CY7C106B 7C106B-12
Contextual Info: CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected. • High speed

C106B2

Abstract: c106b1 equivalent C106B C106B4 C106B3 C106B TO-2
Contextual Info: 1CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

1709 013

Abstract: CY7C1006D CY7C106D CY7C106D-10VXI
Contextual Info: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

Contextual Info: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description [1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 80 mA @ 10 ns • Low CMOS standby power — ISB2 = 3.0 mA

C106B

Abstract: CY7C1006B CY7C106B CY7C1006B-15VC c106b1 equivalent
Contextual Info: 1CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

CY7C1006BN

Abstract: CY7C106BN
Contextual Info: CY7C106BN CY7C1006BN 256K x 4 Static RAM Features Functional Description The CY7C106BN and CY7C1006BN are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and

Contextual Info: CY7C106D CY7C1006D 1-Mbit 256K x 4 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C106B/CY7C1006B • High speed — tAA = 10 ns • Low active power — ICC = 60 mA @ 10 ns • Low CMOS standby power • • • •

C106B1

Abstract: C106B CY7C1006B CY7C106B
Contextual Info: 1CY7C1006B CY7C106B CY7C1006B 256K x 4 Static RAM Features Enable CE , an active LOW Output Enable (OE), and three-state drivers. These devices have an automatic power-down feature that reduces power consumption by more than 65% when the devices are deselected.

Contextual Info: CY7C106D CY7C1006D 1-Mbit 256 K x 4 Static RAM 1-Mbit (256 K × 4) Static RAM Features • Pin- and function-compatible with CY7C106B/CY7C1006B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power ❐ ISB2 = 3.0 mA

Contextual Info: CY7C106D CY7C1006D 1-Mbit 256 K x 4 Static RAM 1-Mbit (256 K × 4) Static RAM Features • Pin- and function-compatible with CY7C106B/CY7C1006B ■ High speed ❐ tAA = 10 ns ■ Low active power ❐ ICC = 80 mA @ 10 ns ■ Low CMOS standby power ❐ ISB2 = 3.0 mA

1709 013

Abstract: CY7C1006BN CY7C106BN
Contextual Info: CY7C106BN CY7C1006BN 256K x 4 Static RAM Features Functional Description The CY7C106BN and CY7C1006BN are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and

Contextual Info: CY7C106BN 256K x 4 Static RAM Features Functional Description The CY7C106BN is a high performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable CE , an active LOW Output Enable (OE), and tristate drivers. These devices have an

vhdl code for dice game

Abstract: Video Proc 3.3V 0.07A 64-Pin PQFP ez811 GRAPHICAL LCD interfaced with psoc 5 cypress ez-usb AN2131QC CYM9239 vhdl code PN 250 code generator CY3649 cy7c63723 Keyboard and Optical mouse program CY7C9689 ethernet
Contextual Info: Product Selector Guide Communications Products Description Pins Part Number Freq. Range Mbps ICC (mA) Packages* 3.3V SONET/SDH PMD Transceiver 2.5V SiGe Low Power SONET/SDH Transceiver SONET/SDH Transceiver w/ 100K Logic 2.5 G-Link w/ 100K Logic OC-48 Packet Over SONET (POS) Framer

K6X0808C1D-BF55

Abstract: HY6264P AS6C1008-55SIN samsung p28 K6R4016V1D-UC10 as6c4008-55sin HYNIX IS61LV25616AL-10KLI GS71116AGP-10 uPD431000ACZ-70L
Contextual Info: cross_reference Density Organization Alliance Alliance Part Number Alliance Package Alliance Speed Samsung Samsung Part Number Cypress Cypress Part Number Cypress Package Cypress Package Code Cypress Speed IDT Part Number IDT Package IDT Package Code IDT Speed ISSI

Contextual Info: CY7C106D CY7C1006D PRELIMINARY 1-Mbit 256K x 4 Static RAM Functional Description[1] Features The CY7C106D and CY7C1006D are high-performance CMOS static RAMs organized as 262,144 words by 4 bits. Easy memory expansion is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and tri-state