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Rochester Electronics LLC CY62136VLL-55ZI IC SRAM 2MBIT PARALLEL 44TSOP II
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DigiKey	CY62136VLL-55ZI	Bulk			87	1 - 10 - 100 $3.47 1000 $3.47 10000 $3.47	Buy Now
Rochester Electronics LLC CY62136VLL-55BAI IC SRAM 2MBIT PARALLEL 48FBGA
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DigiKey	CY62136VLL-55BAI	Bulk			171	1 - 10 - 100 - 1000 $1.76 10000 $1.76	Buy Now
Rochester Electronics LLC CY62136VNLL-70BAI STANDARD SRAM
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DigiKey	CY62136VNLL-70BAI	Bulk			62	1 - 10 - 100 $4.91 1000 $4.91 10000 $4.91	Buy Now
Infineon Technologies AG CY62136VLL-70ZSXE IC SRAM 2MBIT PARALLEL 44TSOP II
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DigiKey	CY62136VLL-70ZSXE	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC CY62136VLL-70ZSXE IC SRAM 2MBIT PARALLEL 44TSOP II
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DigiKey	CY62136VLL-70ZSXE	Tray			151	1 - 10 - 100 - 1000 $2 10000 $2	Buy Now

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CY62136V Datasheets (44)

Part	Manufacturer	Description	Datasheet Type	PDF
CY62136V	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136V	Cypress Semiconductor	2M (128K x 16) Static RAM	Original	PDF
CY62136V18	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136V-70BAI	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136V-70ZI	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136VL-70BAI	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136VL-70ZI	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136VLL	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136VLL-55BAI	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136VLL-55BAI	Cypress Semiconductor	2M (128K x 16) Static RAM	Original	PDF
CY62136VLL-55ZI	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136VLL-55ZI	Cypress Semiconductor	2M (128K x 16) Static RAM	Original	PDF
CY62136VLL-55ZSI	Cypress Semiconductor		Original	PDF
CY62136VLL-55ZXI	Cypress Semiconductor	2-Mbit (128K x 16) Static RAM	Original	PDF

CY62136VLL-70BAI	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136VLL-70BAI	Cypress Semiconductor	2M (128K x 16) Static RAM	Original	PDF
CY62136VLL-70BAI	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136VLL-70BAI	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136VLL-70BAIT	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF
CY62136VLL-70ZI	Cypress Semiconductor	128K x 16 Static RAM	Original	PDF

CY62136V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CY62136VLL-70ZXI Abstract: CY62136V CY62136VLL Text: CY62136V MoBL 2-Mbit 128K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not	Original	PDF	CY62136V I/O15) CY62136VLL-70ZXI CY62136VLL
CY62136VLL Abstract: No abstract text available Text: CY62136V MoBL 2-Mbit 128K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly	Original	PDF	CY62136V 70-ns 44-pin CY62136CV30 CY62136VLL
Untitled Abstract: No abstract text available Text: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Temperature Ranges — Industrial: –40°C to 85°C • High speed: 55 ns and 70 ns • Wide voltage range: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features	Original	PDF	CY62136VN 44-pin 48-ball
Untitled Abstract: No abstract text available Text: CY62136V MoBL 2M 128K x 16 Static RAM Features • • • • • • • • toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected	Original	PDF	CY62136V I/O15) 44-pin CY62136CV30
CY62136VN Abstract: No abstract text available Text: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when	Original	PDF	CY62136VN I/O15)
fbga 12 x 12 thermal resistance Abstract: No abstract text available Text: THIS SPEC IS OBSOLETE Spec No: 38-05087 Spec Title: CY62136V MOBL R 2-MBIT (128K X 16) STATIC RAM Sunset Owner: Anuj Chakrapani (AJU) Replaced by: None CY62136V MoBL 2-Mbit (128K x 16) Static RAM This is ideal for providing More Battery Life (MoBL®) in	Original	PDF	CY62136V 44-pin 48-ball fbga 12 x 12 thermal resistance
CY62136V Abstract: CY62136VLL-55ZI Text: 1 CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V-3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected	Original	PDF	CY62136V CY62136V: CY62136VLL-55ZI
CY62136V Abstract: CY62136VLL-55ZI BA48 CY62136VLL-70ZI Text: CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V−3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected	Original	PDF	CY62136V CY62136V: CY62136VLL-55ZI BA48 CY62136VLL-70ZI
62137A Abstract: No abstract text available Text: Cypress Semiconductor Qualification Report QTP# 99262/99261 VERSION 1.0 December, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell	Original	PDF	R52LD CY62136V/CY62137V CY62138V CY62136V/62137V/62138V 7C62136/7A) 7C62136A/62137A/62138A H137V-ZSIB CY62137V-ZSIB 30C/60 62137A
CY62136VN Abstract: No abstract text available Text: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when	Original	PDF	CY62136VN I/O15)
Untitled Abstract: No abstract text available Text: CY62136FV30 MoBL PRELIMINARY 2-Mbit 128K x 16 Static RAM Functional Description[1] Features • Very high speed: 45 ns • Wide voltage range: 2.20V–3.60V • Pin-compatible with CY62136V, CY62136CV30/CV33, CY62136EV30 • Ultra-low standby power — Typical standby current: 0.5 µA	Original	PDF	CY62136FV30 CY62136V, CY62136CV30/CV33, CY62136EV30 48-ball 44-pin
AN1064 Abstract: CY62136VN Text: CY62136VN MoBL 2-Mbit 128K x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected	Original	PDF	CY62136VN I/O15) AN1064
CY62137V Abstract: CY62138V Text: Cypress Semiconductor Qualification Report QTP# 99075 VERSION 1.0 April, 1999 MoBL SRAM, R52LD Technology, Fab 4 Qualification CY62136V/CY62137V 128K x 16 Static RAM CY62138V 256K x 8 Static RAM CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Cypress Semiconductor	Original	PDF	R52LD CY62136V/CY62137V CY62138V CY62136V/62137V/62138V 7C62136/7A) CY62136V/62137V/62138V R52LD-3 CY62137V 44-pin CY62137V CY62138V
Untitled Abstract: No abstract text available Text: CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V−3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected	Original	PDF	CY62136V CY62136V:

CY62136V Abstract: CY62136V18 Text: CY62136V MoBL CY62136V18 MoBL2™ 128K x 16 Static RAM Features put/output pins I/O0 through I/O 15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).	Original	PDF	CY62136V CY62136V18 CY62136V18: CY62136V:
CY62136V Abstract: CY62136VLL-55ZI CY62136 Text: CY62136V MoBL 128K x 16 Static RAM Features • Low voltage range: — CY62136V: 2.7V-3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected	Original	PDF	CY62136V CY62136V: CY62136VLL-55ZI CY62136
CY62136V Abstract: CY62136CV30 Text: 36CV30 CY62136CV30 MoBL 2M 128K x 16 Static RAM Features • • • • • • • • • High Speed: 55 ns and 70 ns availability Voltage range: 2.7V–3.3V Pin Compatible with the CY62136V Ultra-low active power — Typical active current: 1.5 mA @ f = 1 MHz	Original	PDF	36CV30 CY62136CV30 CY62136V I/O15) CY62136CV30 CY62136V
CY62136V Abstract: CY62136VLL Text: CY62136V MoBL 2-Mbit 128K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not	Original	PDF	CY62136V I/O15) CY62136CV30 70-ns CY62136VLL
CY62135V18 Abstract: CY7C1329 8355F Text: Cypress Semiconductor Product Qualification Report QTP# 003108 VERSION 1.0 December 2000 2 Meg FCP MoBL2  SRAM Family R52D-3, Fab 4 CY62135V18 CY62136V18/CY62137V18 128K x 16 Static RAM MoBL  and More Battery life are Trade mark of Cypress Semiconductor Corporation.	Original	PDF	R52D-3, CY62135V18 CY62136V18/CY62137V18 CY62136V18/CY62136V18/CY62137V18 R52D-3 CY7C1329-AC 30C/60 CY62135V18 CY7C1329 8355F
CY62136V Abstract: CY62136VLL Text: CY62136V MoBL 2-Mbit 128K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not	Original	PDF	CY62136V I/O15) CY62136VLL
CY62136VLL-70ZI Abstract: CY62136V CY62136V18 CY62136VLL-70BAI TE-05 Text: CY62136V MoBL CY62136V18 MoBL2™ CYPRESS 1 2 8 K x Features S ta tic R A M put/output pins l/O 0 through l/O-ip; are placed in a high-impedance state when: deselected (CE HIGH), outputs are dis abled (OE HIGH), BHE and BLE ^ r e disabled (BHE, BLE	OCR Scan	PDF	CY62136V CY62136V18 CY62136V: CY62136VLL-70ZI CY62136VLL-70BAI TE-05
Untitled Abstract: No abstract text available Text: CY62136V MoBL 128K x 16 Static R A M Features disabled B H E , B LE HIG H , or during a w rite operation (CE LOW, and W E LOW). • Low vo ltag e range: W ritin g to the device is a c c om p lish ed by taking chip enable (CE) and w rite enable (W E) inputs LOW. If byte low enable	OCR Scan	PDF	CY62136V
CY62136V Abstract: CY62136V-70BAI CY62136V-70ZI Text: CYPRESS PRELIMINARY CY62136V MoBL 12 8 K x Features 16 S ta tic R A M disabled B H E , BLE HIG H , o r during a w rite operation (CE LOW, and W E LOW ). • Low vo ltag e range: — 1 .8 V -3 .3 V • U ltra-lo w ac tiv e, s ta n d b y p o w er • Easy m e m o ry ex p a n sio n w ith C E and O E fea tu res	OCR Scan	PDF	CY62136V CY62136V-70BAI CY62136V-70ZI
Untitled Abstract: No abstract text available Text: CYPRESS PRELIMINARY CY62136V MoBL 1 2 8 K x 1 6 S ta tic R A M Features disabled B H E , BLE HIG H , o r during a w rite op era tion (CE LOW, and W E LOW ). • Low vo ltag e range: — 1 .8 V -3 .3 V • U ltra-lo w active, s ta n d b y p o w er • Easy m e m o ry ex p a n sio n w ith C E and O E fe a tu re s	OCR Scan	PDF	CY62136V

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Rochester Electronics LLC CY62136VLL-55ZI

Rochester Electronics LLC CY62136VLL-55BAI

Rochester Electronics LLC CY62136VNLL-70BAI

Infineon Technologies AG CY62136VLL-70ZSXE

Rochester Electronics LLC CY62136VLL-70ZSXE

CY62136V Datasheets (44)

CY62136V Datasheets Context Search

CY62136VLL-70ZXI

CY62136VLL

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CY62136VN

fbga 12 x 12 thermal resistance

CY62136V

CY62136V

62137A

CY62136VN

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AN1064

CY62137V

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CY62136V

CY62136V

CY62136V

CY62136V

CY62135V18

CY62136V

CY62136VLL-70ZI

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CY62136V

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