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    CY62126 Price and Stock

    Rochester Electronics LLC CY62126EV30LL-45BVXI

    IC SRAM 1MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62126EV30LL-45BVXI Bulk 73,412 158
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    Rochester Electronics LLC CY62126DV30L-55ZIT

    IC SRAM 1MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62126DV30L-55ZIT Bulk 10,000 239
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    Rochester Electronics LLC CY62126EV30LL-45BVXIT

    IC SRAM 1MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62126EV30LL-45BVXIT Bulk 8,052 158
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    Rochester Electronics LLC CY62126DV30LL-55ZXIT

    IC SRAM 1MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62126DV30LL-55ZXIT Bulk 7,537 155
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    Rochester Electronics LLC CY62126EV30LL-55ZSXE

    IC SRAM 1MBIT PARALLEL 44TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62126EV30LL-55ZSXE Bulk 7,310 67
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    Find more CY62126 price and stock on Findchips.com

    CY62126 Datasheets (127)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62126BV Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62126BVLL-55BAI Cypress Semiconductor Original PDF
    CY62126BVLL-55BAXI Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 3.3V 1MBIT 64KX16 55NS 48FBGA Original PDF
    CY62126BVLL-55ZI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62126BVLL-55ZIT Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 2.5V|3.3V Supply, Industrial, TSOP II, 44-Pin Original PDF
    CY62126BVLL-55ZXI Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 3.3V 1MBIT 64KX16 55NS 44TSOP-II Original PDF
    CY62126BVLL-70BAI Cypress Semiconductor 64k x 16 Static RAM Original PDF
    CY62126BVLL-70BAXI Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 3.3V 1MBIT 64KX16 Original PDF
    CY62126BVLL-70BVI Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 2.5V|3.3V Supply, Industrial, TSOP II, 44-Pin Original PDF
    CY62126BVLL-70BVIT Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 2.5V|3.3V Supply, Industrial, VFBGA, 48-Pin Original PDF
    CY62126BVLL-70BVXI Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 2.5V|3.3V 1MBIT 64KX16 Original PDF
    CY62126BVLL-70ZI Cypress Semiconductor 64k x 16 Static RAM Original PDF
    CY62126BVLL-70ZIT Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 2.5V|3.3V Supply, Industrial, TSSOP, 48-Pin Original PDF
    CY62126BVLL-70ZXI Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 3.3V 1MBIT 64KX16 70N Original PDF
    CY62126BVLL-70ZXIT Cypress Semiconductor IC SRAM CHIP ASYNC SINGLE 2.5V|3.3V 1MBIT 64KX16 7 Original PDF
    CY62126DV30 Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62126DV30L Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY62126DV30L-55BAI Cypress Semiconductor SRAM Chip, Asynchronous, 1Mbit, SDR, 2.5V|3.3V Supply, Industrial, FBGA, 48-Pin Original PDF
    CY62126DV30L-55BAI Cypress Semiconductor Memory : MicroPower SRAMs Original PDF
    CY62126DV30L-55BAIT Cypress Semiconductor SRAM Chip, 1MB (64Kx16) Static RAM, Tape and Reel Original PDF
    ...

    CY62126 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN1064

    Abstract: CY62126DV30 CY62126EV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE
    Text: MoBL ,CY62126EV30 1-Mbit 64K x 16 Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits[1]. This device features advanced circuit design to provide ultra low active current. This


    Original     		CY62126EV30 CY62126EV30 AN1064 CY62126DV30 CY62126EV30LL-45BVXI CY62126EV30LL-45ZSXI CY62126EV30LL-55BVXE PDF

    CY62126DV30L

    Abstract: CY62126DV30LL CY62126BV CY62126DV30 CY62126DV30LL-55ZXI
    Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly


    Original     		CY62126DV30 I/O15) 44-pin 56-Lead 56-pin CY62126DV30L CY62126DV30LL CY62126BV CY62126DV30LL-55ZXI PDF

    BV48A

    Abstract: No abstract text available
    Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not


    Original     		CY62126DV30 CY62126BV 48-ball 44-lead 44-pin CY62126DV30-L BV48A PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly


    Original     		CY62126DV30 CY62126BV 48-ball 44-pin 56-Lead 56-pin PDF

    CY62126BV

    Abstract: CY62126DV30 CY62126DV30L
    Text: 26DV30 ADVANCE INFORMATION CY62126DV30 MoBL 64K x 16 Static RAM Features • • • • • • • • • reduces power consumption by 90% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when


    Original     		26DV30 CY62126DV30 I/O15) CY62126BV CY62126BV CY62126DV30L PDF

    CY62126BV

    Abstract: CY62126DV30 CY62126DV30L
    Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM Features portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing


    Original     		CY62126DV30 I/O15) CY62126DV30 70-ns CY62126BV CY62126DV30L PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		CY62126EV30 I/O15) PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive-A: –40 °C to +85 °C ❐ Automotive-E: –40 °C to +125 °C


    Original     		CY62126EV30 CY62126DV30 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62126DV30 MoBL PRELIMINARY 1 Mb 64K x 16 Static RAM Features • • • • • • • • Very high speed: 55 ns Wide voltage range: 2.2V to 3.6V Pin compatible with CY62126BV Ultra-low active power — Typical active current: 0.5 mA @ f = 1 MHz — Typical active current: 5 mA @ f = fMAX


    Original     		CY62126DV30 CY62126BV 48-ball 44-lead CY62126DV30 PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62126ESL MoBL 1-Mbit 64K x 16 Static RAM Features automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and


    Original     		CY62126ESL I/O15) PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		CY62126EV30 I/O15) PDF

    AN1384

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features Functional Description • High speed: 45 ns The CY62126EV30 is a high performance CMOS static RAM organized as 64K words by 16 bits. This device features advanced circuit design to provide ultra low active current. This


    Original     		CY62126EV30 I/O15) 727-CY26EV30LL45ZSXI CY62126EV30LL-45ZSXI AN1384 PDF

    A6 transistor mini

    Abstract: CY62126VLL-55BAC CY62126V TSOP II 54
    Text: PRELIMINARY CY62126V 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns — 198 mW (max.) (55 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected


    Original     		CY62126V 44-pin CY62126V A6 transistor mini CY62126VLL-55BAC TSOP II 54 PDF

    CY62127V

    Abstract: No abstract text available
    Text: fax id: 1100 CY62126V PRELIMINARY 64K x 16 Static RAM Features BLE is LOW, then data from I/O pins (l/0-| through l/Og), is written into the location specified on the address pins (A0 through A 15). If byte high enable (BHE) is LOW, then data from I/O pins (l/Og through l/0 -|g) is written into the location speci­


    OCR Scan     		CY62126V 44-pin CY62126V CY62127V PDF

    AN1064

    Abstract: CY62126DV30 CY62126EV30
    Text: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Features • High speed: 45 ns ■ Temperature ranges ❐ Industrial: –40 °C to +85 °C ❐ Automotive: –40 °C to +125 °C ■ Wide voltage range: 2.2 V to 3.6 V ■ Pin compatible with CY62126DV30 ■


    Original     		CY62126EV30 CY62126DV30 I/O15) AN1064 CY62126DV30 PDF

    CY62126BV

    Abstract: No abstract text available
    Text: CY62126BV 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 54 mW (max.) (15 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected


    Original     		CY62126BV 44-pin CY62126BV PDF

    Ablebond 84-1LMI

    Abstract: 84-1LMI JESD22 0/7C62126/7V
    Text: Cypress Semiconductor Qualification Report QTP# 97506, VERSION 1.0 May, 1998 1 Meg SRAM, R42 Technology, Fab 4 Qualification CY62126/7V 64K x 16 Static RAM, 2.7V - 3.6V Operation Cypress Semiconductor 1 Meg SRAM, R42 Technology, Fab 4 Devices:CY62126/7V Rev. A


    Original     		CY62126/7V 44-pin CY7C1021V33-VC 30C/60 Ablebond 84-1LMI 84-1LMI JESD22 0/7C62126/7V PDF

    CY62126BV

    Abstract: CY62126DV30 CY62126DV30L CY62126DV30LL
    Text: CY62126DV30 MoBL 1-Mbit 64K x 16 Static RAM This is ideal for providing More Battery Life (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power-down feature that significantly reduces power consumption by 90% when addresses are not


    Original     		CY62126DV30 I/O15) CY62126DV30-L 44-pin 56-Lead CY62126BV CY62126DV30 CY62126DV30L CY62126DV30LL PDF

    CY62126BV

    Abstract: No abstract text available
    Text: 26BV CY62126BV 64K x 16 Static RAM Features • 2.7V–3.6V operation • CMOS for optimum speed/power • Low active power 70 ns, LL version — 54 mW (max.) (15 mA) • Low standby power (70 ns, LL version) — 54 µW (max.) (15 µA) • Automatic power-down when deselected


    Original     		CY62126BV 44-pin CY62126BV PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62126ESL MoBL Automotive 1-Mbit 64K x 16 Static RAM Features automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and


    Original     		CY62126ESL 44-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62126ESL MoBL Automotive 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the


    Original     		CY62126ESL I/O15) PDF

    TSOP 48 thermal resistance junction to case

    Abstract: No abstract text available
    Text: CY62126EV30 MoBL 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • High speed: 45 ns • Wide voltage range: 2.2V–3.6V • Pin-compatible with CY62126DV30 • Ultra-low standby power — Typical standby current: 1 µA — Maximum standby current: 4 µA


    Original     		CY62126EV30 CY62126DV30 48-ball 44-pin TSOP 48 thermal resistance junction to case PDF

    AN1064

    Abstract: CY62126ESL-45ZSXI
    Text: CY62126ESL MoBL 1-Mbit 64K x 16 Static RAM Features consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and output pins (IO0 through IO15) are placed in a high impedance


    Original     		CY62126ESL AN1064 CY62126ESL-45ZSXI PDF

    Untitled

    Abstract: No abstract text available
    Text: CY62126ESL MoBL 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (CE HIGH). The input and output pins (I/O0


    Original     		CY62126ESL I/O15) PDF