CVJ10F30 Search Results

CVJ10F30 Price and Stock

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Toshiba America Electronic Components CVJ10F30LF Schottky Rectifier, 32 V, 1 A, Dual Independent, SOT-353F, 5 Pins, 570 mV - Tape and Reel (Alt: CVJ10F30,LF)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	CVJ10F30LF	Reel	3,000	16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.03753	Buy Now
Toshiba America Electronic Components CVJ10F30,LF Schottky Diodes & Rectifiers Small Sig Schottky Vr=30V Io=1A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	CVJ10F30,LF		73,049			1 $0.28 10 $0.189 100 $0.098 1000 $0.089 10000 $0.056	Buy Now
Verical	CVJ10F30,LF		3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.1095	Buy Now
Arrow Electronics	CVJ10F30,LF		3,000	16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.1095	Buy Now
TTI	CVJ10F30,LF	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.059	Buy Now
Toshiba America Electronic Components CVJ10F30,LF(B Small Signal Schottky Diode, Dual Parallel, 32 V, 1 A, 570 mV, 5 A, 125 ?C, SOT-353, 5 Pins (Alt: CVJ10F30,LF(B)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Asia	CVJ10F30,LF(B			24 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CVJ10F30 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CVJ10F30		Toshiba	Japanese - Diodes		Original	PDF
CVJ10F30		Toshiba	Diodes		Original	PDF
CVJ10F30,LF		Toshiba Semiconductor and Storage	Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - X34 SMALL-SIGNAL SCHOTTKY BARRIE		Original	PDF

CVJ10F30 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CVJ10F30 ショットキバリアダイオードシリコンエピタキシャル形 CVJ10F30 1. 用途 • 高速スイッチング用 2. 特長 1 順電圧が小さい。: VF(3) = 0.47 V (標準) 3. 外観と内部回路構成図 1: アノード 1 2: NC	Original	CVJ10F30	PDF
Untitled Abstract: No abstract text available Text: CVJ10F30 Schottky Barrier Diode Silicon Epitaxial CVJ10F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.47 V (typ.) 3. Packaging and Internal Circuit 1: Anode 1 2: NC 3: Anode 2 4: Cathode 2 5: Cathode 1 UFV 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )	Original	CVJ10F30	PDF
Untitled Abstract: No abstract text available Text: CVJ10F30 Schottky Barrier Diode Silicon Epitaxial CVJ10F30 1. Applications • High-Speed Switching 2. Features 1 Low forward voltage: VF(3) = 0.47 V (typ.) 3. Packaging and Internal Circuit 1: Anode 1 2: NC 3: Anode 2 4: Cathode 2 5: Cathode 1 UFV Start of commercial production	Original	CVJ10F30	PDF
SSM3J307T Abstract: SSM3J328R SSM3J334R Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g	Original	200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R	PDF
smd diode Lz zener Abstract: CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B Text: SEMICONDUCTOR GENERAL CATALOG Diodes Rectifiers Variable Capacitance Diodes Radio-Frequency Switching Diodes Zener Diodes Switching Diodes Schottky Barrier Diodes Photodiodes 1 2011/9 SCE0004L Rectifiers General-Purpose Rectifiers Average Forward Current A	Original	SCE0004L TPC6K01 HMG01 CRG02 CRG07 CRG03 CRG09 CMG05 CMG07 CMG02 smd diode Lz zener CRS20I30B JDV2S41 CRS15I30B CUS10I40A TOSHIBA DIODE CATALOG toshiba SEMICONDUCTOR GENERAL CATALOG CMS30I40A CMS10I40A CRS20I40B	PDF