unjf
Abstract: unjf-3A Gems Sensors 33656E4
Text: PRESSURE SENSORS 6700 Series-Stable Industrial Transmitters with Turndown Capabilities CVD TECHNOLOGY PRESSURE TRANSDUCERS Ī Gauge and absolute pressure models Ī Submersible, general purpose and wash down enclosures Ī High stability achieved by CVD sensing element
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400bar;
000psi)
200mWG
33656E4
unjf
unjf-3A
Gems Sensors
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J1926
Abstract: 4-pin Mini DIN down hole intrinsically safe pressure transducer
Text: PSIBAR CVD types 2200 Series / 2600 Series – General Purpose Industrial Pressure Transducers Series 2200 Gauge, Absolute, Vacuum and Compound Pressure Models Available Submersible, General Purpose and Wash Down Enclosures High Stability Achieved by CVD Sensing Element
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UNJF-3A
Abstract: unjf MS33656-E4 Pressure Transducers gems 6700 33656E4 IEC 68-2-32 unjf insert CONDUIT UNF
Text: PRESSURE SENSORS 6700 Series-Stable Industrial Transmitters with Turndown Capabilities CVD TECHNOLOGY PRESSURE TRANSDUCERS Ī Gauge and absolute pressure models Ī Submersible, general purpose and wash down enclosures Ī High stability achieved by sputtered sensing element
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200mWG
33656E4
UNJF-3A
unjf
MS33656-E4
Pressure Transducers gems 6700
33656E4
IEC 68-2-32
unjf insert
CONDUIT UNF
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f 6267
Abstract: J514 "Pressure Transducers" 16-20UNF IEC 68-2-32 DIN 43650 Pressure Transducers
Text: 2200 Series / 2600 Series Universal Industrial Pressure Transducers Gauge, absolute, vacuum and compound pressure models available Submersible, general purpose and wash down enclosures High stability achieved by CVD sensing element Millivolt, voltage and current output models
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Pressure Transducers
Abstract: No abstract text available
Text: 2200 Series / 2600 Series Universal Industrial Pressure Transducers Gauge, absolute, vacuum and compound pressure models available Submersible, general purpose and wash down enclosures High stability achieved by CVD sensing element Millivolt, voltage and current output models
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laser diode 905nm
Abstract: CVD 40 laser diode ldi 905 905nm rangefinding CVD 165 CVD-195 CVD-197 Laser Diode Specifications 1550nm CVD 65
Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 LDI High Power Pulsed Laser Diodes Revised 1-04 “NEW” LDI High Power Pulsed Laser Diodes Laser Diode Incorporated’s LDI CVD series lasers are strained layer
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850nm
905nm.
850nm,
905nm,
1550nm
laser diode 905nm
CVD 40
laser diode ldi 905
905nm
rangefinding
CVD 165
CVD-195
CVD-197
Laser Diode Specifications 1550nm
CVD 65
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TRANSDUCER BK
Abstract: gems pressure transducer
Text: PSIBAR CVD types 1200 Series / 1600 Series – OEM Transducers Featuring Exceptional Proof Pressure and Stability Specifications Gauge, Vacuum, and Compound Pressure Models General Purpose and Wash down Enclosures High Proof Pressure Achieved by Thicker Diaphragm Construction
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24AWG,
TRANSDUCER BK
gems pressure transducer
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din 16288
Abstract: 25bar 16288 50T PRESSURE TRANSMITTER BY ABB ISO4400 iso 4400 EN50081-2 EN50082-2 b1204 1600kPa
Text: Data Sheet FieldIT SS/51G/A_3 50T Series Transmitters Model 51G/A gauge/absolute pressure transmitter Ranges: -100 to 40000kPa -1 to 400bar -14.5 to 6000psi • Base accuracy : ≤ 0.25% BFSL ■ Chemical Vapour Deposition (CVD) technology ■ Various process connections
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SS/51G/A
51G/A
40000kPa
400bar
6000psi
51G/A
din 16288
25bar
16288
50T PRESSURE TRANSMITTER BY ABB
ISO4400
iso 4400
EN50081-2
EN50082-2
b1204
1600kPa
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Untitled
Abstract: No abstract text available
Text: Gauge, vacuum, and compound pressure models General purpose and wash down enclosures High proof pressure achieved by thicker diaphragm construction Voltage and current output models The features stability and toughness via its CVD and ASIC design coupled with a thicker diaphragm. The thicker diaphragm enables
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MIL-C-0026482
Abstract: unjf ZENER A16 6600-Series UNJF-3A L-12 L-13 33656E4 DIN 43650 MS33656E4
Text: -43 L-12 6600 Series-Stable Industrial Transmitters with Turndown Capabilities Ī Gauge and Absolute Pressure Models Ī Submersible, General Purpose and Wash down Enclosures Ī High Stability Achieved by CVD Sensing Element The 6600 series features customer accessible 5:1 turndown via a switch and
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33656E4
MIL-C-0026482
unjf
ZENER A16
6600-Series
UNJF-3A
L-12
L-13
33656E4
DIN 43650
MS33656E4
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8-4 BENDIX
Abstract: 2200BG pressure oil gauge sensor Gems Sensors Gems Sensors 2200
Text: The Strength of Gems Psibar Pressure Transducers Starts with the Science of CVD Gems Sensors provides the most stable pressure sensor on the market today by combining advanced sensing technology with highly automated and revolutionary manufacturing methods. The result is a sensing element comprised of silicon,
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Vac-15
Vac-24
Vac-39
8-4 BENDIX
2200BG
pressure oil gauge sensor
Gems Sensors
Gems Sensors 2200
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laser diode 905nm
Abstract: CVD 65 CVD 165 Tyco diodes CVD 67 CVD-90 laser diode ldi 905 rangefinding CVD 166 905nm
Text: Catalog 1307895 Revised 9-04 Fiber Optic Products Catalog High Power Pulsed Laser Diodes The CVD series lasers are strained layer quantum well devices fabricated by the MOCVD process. These pulsed lasers are available with up to 140W of peak power and either 850nm or 905nm.
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850nm
905nm.
850nm,
905nm,
1550nm
laser diode 905nm
CVD 65
CVD 165
Tyco diodes
CVD 67
CVD-90
laser diode ldi 905
rangefinding
CVD 166
905nm
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Untitled
Abstract: No abstract text available
Text: 600V 架橋ポリエチレン絶縁ビニルシ ースケーブル（CVDCVT、CVQ） 規格 定格 JIS C 3605 600V、 90℃ ●特長及び用途 ●識別 シース表面に施す色別ラインによる。 CVD：黒（色別ラインなし） 、白 CVT ：黒（色別ラインなし）
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IN4002 diode
Abstract: DIODE IN4002 CVD 60 CVD 67 15X16 CVD 167
Text: Laser Diode Incorporated 2 Olsen Avenue, Edison, New Jersey 08820 USA Voice: 732-549-9001, Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com HIGH POWER Pulsed Laser Diodes High Efficiency and Low Drive Currents Stable Output from -50°C to +100°C
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10-32Thd
IN4002
2N3439
IN4002 diode
DIODE IN4002
CVD 60
CVD 67
15X16
CVD 167
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laser diode 905nm
Abstract: CVD 65 DIODE BY 339 CVD 163 15X16 CVD167 905nm
Text: Fiber Optic Business Unit Tyco Electronics/LDI 2 Olsen Avenue Edison, New Jersey 08820 USA Voice: 732-549-9001 Fax: 732-906-1559 Internet: www.laserdiode.com E-mail: sales@laserdiode.com Laser Diode Incorporated High Power Pulsed Laser Diodes High reliability and long life
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850nm,
905nm,
1550nm
905nm
laser diode 905nm
CVD 65
DIODE BY 339
CVD 163
15X16
CVD167
905nm
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PIC16F LED matrix
Abstract: pic18f MCU Family Reference Manual DS51833 PIC16 example asm i2c slave PIC16F1937 PIC24f example code CTMU capacitive touch PIC16F PIC32MX7* reference manual DS51865 PIC18F example code i2c
Text: mTouch Advanced Capacitive Evaluation Kits User’s Guide 2010 Microchip Technology Inc. DS41385C Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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DS41385C
DS41385C-page
PIC16F LED matrix
pic18f MCU Family Reference Manual
DS51833
PIC16 example asm i2c slave
PIC16F1937
PIC24f example code CTMU
capacitive touch PIC16F
PIC32MX7* reference manual
DS51865
PIC18F example code i2c
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pic18f MCU Family Reference Manual
Abstract: No abstract text available
Text: Enhanced mTouch Capacitive Touch Evaluation Kit and Accessory Boards User’s Guide 2009-2012 Microchip Technology Inc. DS41385F Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet.
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DS41385F
DS41385F-page
pic18f MCU Family Reference Manual
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schematic dvd
Abstract: capacitor 0.1uf h1ld tcscs dvd circuit diagram Transistor Data sl 100 TMS320VC33 MCP130-315 0.1uf capacitor TMS320VC33, instruction set
Text: SL811HS + TMS320VC33 APPLICATION NOTE 1. 1.1. 1.2 1.3. 1.4. 1.5. General Notes: The attached schematic contains only the circuitry relevant to the operation of the SL811HS in conjunction with the TMS320VC33 microprocessor. Many of the microprocessor pins were left unconnected. It is up to the designing engineer to
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SL811HS
TMS320VC33
SL811HS
TMS320VC33
SL811HS.
74AHC32
74AHC04
vc33app
schematic dvd
capacitor 0.1uf
h1ld
tcscs
dvd circuit diagram
Transistor Data sl 100
MCP130-315
0.1uf capacitor
TMS320VC33, instruction set
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KS57C0302
Abstract: No abstract text available
Text: « INVERTER GfllN/PHRSE vs. IC : KS57C3020 Ft - 25.5 tm z ] FREQUENCY CHflRflCTERISTICS » Vdd : 3 CV3 R.M - 134.5 Cdeg] Freq. [MHz] —> 0 CdBJ S ü H lÜ M l KS57C0302 - 1 F C R 4 .19M5 Vdd= 3 CVD Ffg.a-d Ta= 20 Cdeg] • -• Typical ? a. V1H/V1L
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KS57G02B
KS57C0302
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C553
Abstract: MSM9888L
Text: IC d e pe nd en ce of os c i l l a t i n g c h ar ac te ri st ics MSM9888L FCR4.0MC5 - STD Room Temp. Vdd CVD * IC NO. 3 0 2 5 item a^e MSM9888L - 302 FCR4.0MC5 (Ffg.a-e) Vdd= 3 CV] •-a. V1H/V1L Typical CV] - - - V1H » 3.3 3.3 -.5 -.4 2.9 2*8 - - .1
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MSM9888L
Tri88
HSM9B88L
C553
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te 2556
Abstract: ym 2121
Text: SGH5003F SONY» AIGaAs/GaAs Low Noise Microwave HEMT Preliminary Package Outline D escription U n it : mm S G H 5003F is an AIG aAs/GaAs HEMT fabricated by M O CVD M e ta l O rga n ic C h e m ical V a p o r D e p o sitio n . T h is 0 .5 m icro n gate FET fe a ture s
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5003F
SGH5003F
5003F-05
te 2556
ym 2121
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KS88P0916
Abstract: No abstract text available
Text: <{ INVERTER Vin vs. Vout IC : KSBBP091G Vaut [V] Vin [V] CHARACTERISTICS >> Vdd : 3 [V] KS88P0916 - 1 F C R G .0M5 Vdd= 3 CVD Fig.a-d Ta= 20 Cdeg] Typ i c a l C L 1 /C L 2 C pF ] Loading capacitance(CLl/CL2) dependence of o s c illa tin g ch a ra cte ristics (C L K L 2)
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KSBBP091G
KS88P091G
K588P8916
KS88P0916
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2m213
Abstract: GaSn NT68P61A
Text: NT68P61R - l FCR8.0M5 Vdd- 5 CV] F lg .a ^ d Ta» 20 Cdeg] T y p lc a ) a. V IH /V IL CV] 7 oi 4.3 4.4 5 ; VIH -3 VIL - .4 .3 1 I -1 b. V2H/V2L CVD 7 y. 4j7 4*9 4.9 5 ! 3 v?i *í. •? *5 1 -1 c . Fose ÍX1 5 3 1 i -1 -3 -5 d. T r is e CuS] 44 4{4
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NTB8P61H
NT68P61R
2m213
GaSn
NT68P61A
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SGH5002F
Abstract: HEM 152
Text: SGH5002F SONY. AIGaAs/GaAs Low Noise Microwave HEMT Preliminary D escription Package Outline U n it : mm S G H 5 0 0 2 F is an AIG aAs/G aAs HEM T fabricated by M O CVD M e ta l O rga n ic C hem ical Vapor D e p o s itio n . T h is 0 .5 m ic ro n ga te FET fe a ture s
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SGH5002F
SGH5002F-05
SGH5002F
HEM 152
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