CURRENT SOURCE SWITHING Search Results

l4962a

Abstract: L4962E Diode BYW 56
Contextual Info: SGS-THOMSON L4962 1.5A POWER SWITHING REGULATOR PRELIMINARY DATA • • • !• • • • • • 1.5A OUTPUT CU RREN T 5.1V TO 40V OUTPUT V O LTA G E RANGE PRECISE ± 2% ) ON-CHIP R EFER EN C E HIGH SWITCHING FREQ U EN CY V E R Y HIGH E F F IC IE N C Y (UP TO 90%)

JY 222 M capacitor

Contextual Info: SGS-THOMSON HLimiSiraB ® L4962 1.5A POWER SWITHING REGULATOR P R E L IM IN A R Y D A T A ' 1.5A O U T P U T C U R R E N T | 5.1V TO 40V O U T P U T V O L T A G E R A N G E ' P R E C IS E ± 2 % ON-CHIP R E F E R E N C E ' H IG H S W IT C H IN G F R E Q U E N C Y

Contextual Info: Æ 7 *7 Æ U S C S - T H O M S O N [* [^ & E m r [iM 0 (g § L4962 1.5A POWER SWITHING REGULATOR P R E L IM IN A R Y D A TA • 1.5 A O U T P U T C U R R E N T • 5 .1 V T O 4 0 V O U T P U T V O L T A G E R A N G E • P R E C IS E ( ± 2 % O N -C H IP R E F E R E N C E

hep 230

Abstract: L4962E
Contextual Info: SCS-THOMSON L4962 lu 1.5A POWER SWITHING REGULATOR P R E L IM IN A R Y D A T A • 1.5A O U TPUT C U R R E N T • 5.1V TO 40V O UTPUT V O L T A G E RANGE • PRECISE ± 2 % O N-CHIP REFERENCE • • H IG H SW ITCHING FREQ U EN C Y V E R Y HIG H E F F IC IE N C Y (UP TO 90% )

Contextual Info: TOSHIBA SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 2 150 SILICON N CHANNEL MGS TYPE t i -M O S T T TECHNICAL DATA HIGH SPEED. HIGH CURRENT SWITHING APPLICATIONS. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS

buz10

Contextual Info: / = 7 SGS-THOMSON ^TÆ, M œ m itgTM O igi BUZ10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE V DSS R DS on BUZ10 50 V 0.08 Q 20 A • HIGH SPEED SWITHING • LOW Rds (0N) • EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS:

schematic diagram reverse forward motor

Contextual Info: i^ 7 SCS-THOMSON BUZ 10 ^ 7 #, HD @ilLI OT©iD©Ì N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ADVANCE DATA TYPE V DSS RDS(on BUZ10 50 V 0.08 Q Id 20 A • HIGH SPEED SWITHING • LOW R ds (0N) • EASY DRIVE FOR COST EFFECTIVE APPLICATIONS. INDUSTRIAL APPLICATIONS'.

Contextual Info: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate

EN5051

Contextual Info: Ordering number:EN5051 FX208 N-Channel Silicon MOSFET Very High-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Very high-speed switching. · 2.5V drive. unit:mm 2121 [FX208] Swithing Time Test CIrcuit 1:No Contact 2:Gate

2SK2150

Abstract: k2150
Contextual Info: TOSHIBA SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 2 150 SILICON N CHANNEL MOS TYPE TECHNICAL DATA t i -M O STT HIGH SPEED.HIGH CURRENT SWITHING APPLICATIONS. CHOPPER REGULATOR. DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS. INDUSTRIAL APPLICATIONS

2SK2055

Abstract: ic 365 C10535E MEI-1202 current Source Swithing 2sk2055 transistor
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2055 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2055 is a N-channel MOS FET of a vertical type and PACKAGE DIMENSIONS in mm is a switching element that can be directly driven by the output of 5.7 ±0.1 2.0 ±0.2

2SK2055

Abstract: C10535E MEI-1202
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2sk2055

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SK3019

Abstract: current Source Swithing
Contextual Info: EM6K1 Transistor Small switching 30V, 0.1A EM6K1 !External dimensions (Units : mm) !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half.

2TR13

Abstract: 2SK3019
Contextual Info: EM6K1 Transistor Small switching 30V, 0.1A EM6K1 !External dimensions (Units : mm) !Features 1) Two 2SK3019 transistors in a single EMT package. 2) The MOSFET elements are independent, eliminating interference. 3) Mounting cost and area can be cut in half.

JAPAN transistor

Abstract: 30v N channel MOS FET 2SK3019 ON503
Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

Contextual Info: EM6K1 Transistor 2.5V Drive Nch+Nch MOS FET EM6K1 zExternal dimensions Unit : mm zStructure Silicon N-channel MOS FET EMT6 1.6 0.5 1.0 0.5 0.5 zFeatures 1) Two 2SK3019 transistors in a single EMT package. 2) The MOS FET elements are independent, eliminating

EM6K6

Contextual Info: EM6K6 EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 zStructure Silicon N-channel MOSFET zDimensions Unit : mm EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half.

Contextual Info: EM6K6 Transistor 1.8V Drive Nch+Nch MOSFET EM6K6 zStructure Silicon N-channel MOSFET zDimensions Unit : mm EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half.

SC2344

Abstract: 41L3
Contextual Info: SANYO SEMICONDUCTOR CORP 12E D g 7 cn707l=i 0D0 41L.3 2SC2344 Epitaxial Planar Silicon Transistors N P N / pnp 2010A High Voltage Switching, A F 100W Driver Applications 2SA1011 544E : 2SA1011 Ha» 1m » Ratings at Ta=25°C Collector to Base Voltage CBO

em6k7

Contextual Info: 1.2V Drive Nch+Nch MOSFET EM6K7 zDimensions Unit : mm zStructure Silicon N-channel MOSFET EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for

Contextual Info: 1.2V Drive Nch+Nch MOSFET EM6K7 Structure Silicon N-channel MOSFET Dimensions Unit : mm EMT6 Applications Switching Features 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for

Contextual Info: 1.2V Drive Nch+Nch MOSFET EM6K7 zStructure Silicon N-channel MOSFET zDimensions Unit : mm EMT6 zApplications Switching zFeatures 1) The MOSFET elements are independent, eliminating mutual interference. 2) Mounting cost and area can be cut in half. 3) Low voltage drive (1.2V) makes this device ideal for