CURRANT Search Results

79M05CU

Abstract: 79M20C 79M15CU 79M05C 79M12CU
Contextual Info: SERIES UA79M00 NEGATIVE-VOLTAGE REGULATORS D 2 2 1 6 , JUNE 1 9 7 6 —REVISED APRIL 1988 • 3-Termlnal Regulators • Output Currant Up to 500 mA N O M IN A L - 5 5 °C T O 1 5 0 ° C O U TP U T O PERATING O PERATING V O LTA G E TE M PER ATU RE RANGE TEM PER ATU RE RANGE

SR500

Abstract: SR600 T082 T092 ZSR330 ZSR500 ZSR600 ZSR800 MVPC N11T
Contextual Info: I 2.85 TO 10 VOLT FIXED POSITIVE LOCAL VOLTAGE REGULATOR ZSR bwa_ ISSUE 1- OCTOBER 1995 FEATURES DEVICE DESCRIPTION The ZSR series three terminal lixad positive voltage regulators feature internal circuit currant limit and thermal shutdown making the davii

1N474A

Abstract: 1N474 in 4746a IN4746A
Contextual Info: ¡URGE ZENER DIODES 1W ZENER DIODES DO-41 CASE 5 SURGE PART NUMBER Nominal Zenef Voltage : -m . O P E R A T ; N G / S T O R A G E T E M P E R A T U R E R A N G E -6 5 C to + 2 0 0 C Currant 1 Volts’ mA Ohms 1N4729A 1\4 7 3 0 A 1N4731A 1N4732A 1N4733A 36

100114F

Abstract: 100114Y
Contextual Info: Philips Components 100114 Document No. 8 5 3 -0 6 0 9 ECN No. 99800 Date of Issue June 1 4 ,1 9 9 0 Status Product Specification Quint Differential Line Driver ECL Products FEATURES •Typical supply currant H ee : 73mA If both receiver inputs are left open or

UC1825

Contextual Info: Switching Regulators PWM Currant Mode The UC1823 and UC1825 family of PWM control ICs is optimized for high frequency switched mode power supply applications. Particular care was given to minimizing propagation delays through the comparators and logic circuitry while maximizing

Contextual Info: Ig I *a n; M V, *^o V2 x 00 O I o o t ro I I 3 i n %e : F B= m ? » =a ft i I I p = > a 5 3" . 3 ^ Forward currant If inA] I f I S I 3 i g * a» 1» g? 1 1 5 » ° 3 “ 1 I 3 ¡32. 5> ?5 P8

Contextual Info: P ^ E U iÄ M 8 Y ir r t e T 51C258Lt LOW POWER 64K x 4 CHMOS DYNAMIC RAM Maximum Access Time ns Maximum CHMOS Standby Currant (mA) 51C258L-12 120 0.1 • Low Power Data Retention - Standby current, CHMOS — 100 pA (max.) - Refresh period, RAS-Only — 32 ms

Contextual Info: ZENER DIODES, LOW CURRENT, LOW NOISE inal Maximum Max mum Reverse Maximum Maximum 400mW Nom Zanar 2anar Zener Leakage Currant Noise Max Temperature Voltage Test impedance *11*- 43 b Density Zener Coefficient Package JEDEC Current Zj f.r Me« )„ Current i i i i m i i i i i i Quantities

Contextual Info: RECTIFIER DIODES, Flat Surface Mount, Glass Passivated, Standard Recovery is t Part Number M ax mum Average Rectified Currant at T, A m p s ) T r C j PIV (V o lte S F tA l , „ {A m p s ) 50 100 GF1B GF1D G FiG 200 400 600 800 1000 GF1J GFtK GF1M StA Maximum

in 4749A

Contextual Info: ZENER DIODES, GLASS PACKAGE, GENERAL PURPOSE 1 W a ft JEDEC Part Number Nominal Maximum Zaire r Zener Zerter Voltage Test Impedance Current at Maximum Knee Impedance Maximum Reverse Currant at V 2 S»C Maximum: Maximum Zener i l i i i i i ! Package Current

N228

Contextual Info: DOUBLE ENDED ZENER DIODES, C1 CAN 400mW JEDEC ': | Minimum Nominal Maximum Zener Zener Zener Zener Voltage Veltaga Voltage Test at t„ Currant at ti, lllllll: iiu« Ser' v, m v, m V , V 1 N225 7.50 9.00 11.00 13.50 17.00 8.75 10.50 12.75 15.75 19.00 7.50

1C010

Abstract: ci 94vo 1D04C DA1C 1002G HERF1001G HERF1008G 1D07 PABI MARKING 1D07G
Contextual Info: s HERF1001G - HERF1008G TAIWAN SEMICONDUCTOR Isolated 10.0 AM PS. Glass Passivated High Efficient Rectifiers ITO-22DAB RoHS COMPLIANCE Features <• Glass pEssiveted ch ip ju nction. <• ■ir High currant capability High reliability h igh su ipc currcn t capa bill ly

EL2039

Abstract: ha2830
Contextual Info: HARRIS SEMICOND SECTOR m HARRIS I V blE D IHAS 4302271 QOMbSbl 3bT HA-2839 SEMICONDUCTOR Very High Slew Raté Wideband Operational Amplifier March 1993 Features Description • Law Supply Currant. 13mA • Vary High Slaw Rata .

Contextual Info: KSC2787 NPN EPITAXIAL SILICON TRANSISTOR FM/AM RF AMP, MIX, CONV, OSC, IF • Coliector-Base Voltage Vc*o= 30V • High Currant Gain Bandwldth Product fT-300M Hz iyp • Low Collector Capacitane* Cob: 2.0PF flyp) ABSOLUTE MAXIMUM RATINGS (T.=25°C) Characteristic

2660D

Contextual Info: 10-20W att Hybrid MOD U LA R D E V I C E S INC MSE D • b574SÖ5 DDDGEhM T ■ MDI DC-DC CONVERTERS SERIES 2 6 6 0 SINGLE OUTPUT DEVICES PARAMETER Output V o f t a g e _ _ + 3 i ^ + 3 3 4 +3.4 _ Output Currant ~ —* INPUT: 270 VDC nominal Range: 200 to 335 VDC continuous

MAX654

Contextual Info: APPLICATION NOTE > 1/1 >J X I / l / l A D esig n er’s Guide to M a x im C onverters DC-DC Load Currant, 10% Load to 100%Load Maxim’s DC-DC converter products target miniature on-card power supplies and battery-operated applica­ tions rather than heavy-duty supplies. Maxim offers

2n4140

Contextual Info: TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N4140 NPN SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCH Maximum Voltages and Currant VCBO Collector to Base Voltage V CEO Collector to Emitter Voltage (Note 4)

SFAF508G

Abstract: SFAF501G t-100x m
Contextual Info: E SFAF501G - SFAF508G TAIWAN SEMICONDUCTOR Isolated 5.0 AMPS. Glass Passivated Super Fast Rectifiers tò RoHS COMPLIANCE ITO-22QAC • wi Features High efficiency, law VF High currant capability High reliability High surge c u rre n t capability Lo w pow er loss.

Q2015

Abstract: 101S 102S 103S 104S A-405 HER101S HER108S F8m-30
Contextual Info: E TAIWAN HER101S - H E R 108S SEMICONDUCTOR 1.0 AMP. High Efficient Rectifiers RoHS A-405 COMPLIANCE -T M 1 .0 :2 S /> •IN. 01^ F ea tu res <> High efficiency. LowVF ❖ High currant capability ❖ High reliability • t- I ' •2U5 IC .2 .1ÜÜ I4 .Ü)

Contextual Info: 6 5 4 3 L D 2 1 D ±0.05 m USB 2.0 Type A Plug Standard USB 2.0 Type B Plug (Standard) C C NOTES: 1. Electrical Specifications: Meets USB 2.0 specifications Low level Contact Resistance: 30 mOhm max. Insulation Resistance 1000 MOhm min. Currant Rating: 1.5 A max. @ 25~C

44258

Abstract: 1N473SA 1W4751A 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B AT617 1N4166B
Contextual Info: ZENER DIODES P irt# Nominal Zener Voltjga T n t Currant M u lm u a Oynamic Impetfanc* *n<ûl 1N4158B 1N4159B 1N4160B 1N4161B 1N4162B 1N4163B 1N4164B 1N4165B 1N4166B 1N4167B 1N4166B 1N4169B 1N4170B 1N4171B 1N4172B 1N4173B 1N4174B 1N4175B 1N4176B 1N4400B 1N4401B

1Nu5

Abstract: IN418 1Ns4 IN270 1N42 UN309 IN73 1N34A 1N46 1N128
Contextual Info: l e m l t r o SEMICONDUCTORS7 " n SemitronicsCorp. INTEX/ SEMITRONICS 'Tz'O I-* 0 7 CORP germanium diodes Max. P tik i H l f ll MM. Farward V o lt« « vo lti Farward Currant <mA) Ravarsa Currant Pawar Ravarsa Disci* Voltaga patian (»alt«) (mW) Ti m V o tta p

SHV15

Abstract: 8 BIT ALU design with verilog/vhdl code SHV14 SHC10 SHC12 SHV10 SHVP10 SHVP12 SHVP14 SHVP15
Contextual Info: SINO-AMERXCAN S ILIC O N EME J> m Ô 2 â l? 4 ti □□□0G37 Li HIGH V O L T A G E HIGH C U R R E N T A S S E M B L Y R E C T IF IF R S 'T-23 OPERATING AND STORAGE TEMPERATURE -2 0 °C tO +13S«C Maximum Peak Reversa Voltag • Maximum Average. : -, Rectified Currant'

EB011

Abstract: MMBC1654N5L
Contextual Info: MOTORCLA SC X ST R S/R F 12E D I t3b75SM 0005*152 MAXIMUM RATINGS Rating Cellseior-Emitter Voltegt CoXcdor-BaM Vottaga Emfttar-S«« Voltage CoHoctor Currant — Contlnuou* Symbol VCEO VCBO VEBO , }£ VahJ* i«o Unit Vde Vdc 110 &0 to •v<te mAdo Max 228